SU494707A1 - Method for measuring nonlinearity coefficient of semiconductor conductivity - Google Patents

Method for measuring nonlinearity coefficient of semiconductor conductivity

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Publication number
SU494707A1
SU494707A1 SU1911206A SU1911206A SU494707A1 SU 494707 A1 SU494707 A1 SU 494707A1 SU 1911206 A SU1911206 A SU 1911206A SU 1911206 A SU1911206 A SU 1911206A SU 494707 A1 SU494707 A1 SU 494707A1
Authority
SU
USSR - Soviet Union
Prior art keywords
nonlinearity coefficient
semiconductor conductivity
measuring
measuring nonlinearity
power
Prior art date
Application number
SU1911206A
Other languages
Russian (ru)
Inventor
Винцентас Ионо Денис
Жильвинас Витауто Канцлерис
Зигмас Ионо Мартунас
Original Assignee
Институт Физики Полупроводников Ан Литовской Сср
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Физики Полупроводников Ан Литовской Сср filed Critical Институт Физики Полупроводников Ан Литовской Сср
Priority to SU1911206A priority Critical patent/SU494707A1/en
Application granted granted Critical
Publication of SU494707A1 publication Critical patent/SU494707A1/en

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Description

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Изобретение относитс  к изыерителной технике и ыожет быть использовано дл  исследовани  изменени  электропроводности в высокочастотном (ВЧ) поле как полупроводников, так и других материалов .The invention relates to iron technology and can be used to study changes in electrical conductivity in the high frequency (HF) field of both semiconductors and other materials.

Известные способы измерени  коэффициента нелинейности ВЧ-поле неудобны тем, что необходимо измер ть характеристики распростран ющегос  в тракте ВЧ-сигнала.The known methods for measuring the nonlinearity coefficient of the RF field are inconvenient because it is necessary to measure the characteristics of the RF signal propagating in the path.

Известен способ, при котором измерение Вдфф основано на. эффекте смешивани  гармоник, и поэтому нет необходимости измер ть характеристики распростран ющегос  в тракте ВЧ-сигнала. Предполагаетс , что не зависит от частоты, а это дл  каждого материала справедливо только в определенном инIтервале частот ВЧ-пол ,There is a method in which the Vdff measurement is based on. harmonic mixing effect, and therefore it is not necessary to measure the characteristics of the RF signal propagating in the path. It is assumed that the frequency does not depend on the frequency, and this for each material is valid only in a certain frequency range of the RF field,

Известен способ измерени  Вдфф по изменению посто нного тока, текущего через образец, в амплитудно-модулированном ВУ-поле, дл  осуществлени  которого необходимо, во-первых, измерить изменение посто нного тока, текущего через образец, при поступлении в тракт ВЧ-сигнала и, вто вторых, определить долю мощности РПОГЛ поглощенную образцом . Дл  определени  PJJQJ, следует измерить мощность, поступающую на образец , мощность, отраженную от образца, и мощность, проход щую в тракт за образцом . Поглощенна  мощность определ етс  как разность измеренных величин, поэтому погрешность определени  увеличиваетс . С другой стороны, аппаратура , предназначенна  дл  измерени  импульсной мощности ВЧ-пол ,малоста|бильна , ее точность во многих случа хThere is a known method for measuring Vdff by changing the direct current flowing through the sample in an amplitude-modulated WU-field, to accomplish which it is necessary, first, to measure the change in direct current flowing through the sample when an RF signal enters the path and second, to determine the fraction of the power of the RPGL absorbed by the sample. To determine the PJJQJ, one should measure the power delivered to the sample, the power reflected from the sample, and the power passing to the path behind the sample. Absorbed power is defined as the difference between the measured values, so the error in determination is increased. On the other hand, the equipment designed to measure the RF power of a pulsed power is low-cost, its accuracy in many cases

SU1911206A 1973-04-27 1973-04-27 Method for measuring nonlinearity coefficient of semiconductor conductivity SU494707A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1911206A SU494707A1 (en) 1973-04-27 1973-04-27 Method for measuring nonlinearity coefficient of semiconductor conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1911206A SU494707A1 (en) 1973-04-27 1973-04-27 Method for measuring nonlinearity coefficient of semiconductor conductivity

Publications (1)

Publication Number Publication Date
SU494707A1 true SU494707A1 (en) 1975-12-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
SU1911206A SU494707A1 (en) 1973-04-27 1973-04-27 Method for measuring nonlinearity coefficient of semiconductor conductivity

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SU (1) SU494707A1 (en)

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