SU425420A1 - Method for growing crystals of potassium dihydrophos phate - Google Patents
Method for growing crystals of potassium dihydrophos phate Download PDFInfo
- Publication number
- SU425420A1 SU425420A1 SU711655597A SU1655597A SU425420A1 SU 425420 A1 SU425420 A1 SU 425420A1 SU 711655597 A SU711655597 A SU 711655597A SU 1655597 A SU1655597 A SU 1655597A SU 425420 A1 SU425420 A1 SU 425420A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- solution
- potassium
- crystallization chamber
- dihydrophos
- phate
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
1one
Изобретение относитс к способу получени монокристаллов дигидрофосфата кали , которые используют в квантовой электронике .The invention relates to a method for producing potassium dihydrogen phosphate single crystals that are used in quantum electronics.
Известен способ выращивани дигидрофосфата кали из растворов при посто нной температуре с добавлением в процессе выращивани исходного раствора в кристаллизационную камеру и отводом конденсата из нее.A known method of growing potassium dihydrogen phosphate from solutions at a constant temperature with the addition of the initial solution to the crystallization chamber during the cultivation process and removal of condensate from it.
Однако в кристаллизационной камере не поддерживаетс посто нное пересыщение .However, constant supersaturation is not maintained in the crystallization chamber.
Цель изобретени - поддержание в кристаллизационной камере носто нного пересыщени .The purpose of the invention is to maintain in the crystallization chamber a nonsaturated supersaturation.
Это достигаетс тем, что в процессе выращивани в кристаллизационную камеру добавл ют ненасыщенный раствор при комнатной температуре, а конденсат отвод т в количестве, равном количеству растворител , добавленному с раствором.This is achieved by adding an unsaturated solution to the crystallization chamber at room temperature during the growth process, and the condensate is removed in an amount equal to the amount of solvent added to the solution.
Пример. Путем синтеза, например, по реакции КОН + НзРО4 КН2Р04 + HsO из ранее приготовленной соли готов т насыщенный раствор данной концентрации. Раствор перегревают выше температуры его насыщени на 1-2°С и заливают в кристаллизационную камеру с заранее укрепленными и нагретыми в нем затравками.Example. By synthesizing, for example, a KOH + H3PO4 KH2PO4 + HsO reaction is used to prepare a saturated solution of a given concentration from a previously prepared salt. The solution is superheated above its saturation temperature of 1-2 ° C and poured into the crystallization chamber with the seeds pre-fixed and heated in it.
Одновременно с этим к кристаллизационной камере подсоедин ют устройство дл подпитки раствора и отвода конденсата. Вещество, с помощью которого производ т подпитку, ввод т в кристаллизационную камеру в виде водного раствора с температурой насыщени ниже комнатной.At the same time, a device for feeding the solution and draining condensate is connected to the crystallization chamber. The substance with which the water is produced is introduced into the crystallization chamber in the form of an aqueous solution with a saturation temperature below room temperature.
Раствор дл подпитки ввод т в кристаллизационную камеру непрерывно в течениеThe feed solution is introduced into the crystallization chamber continuously for
всего цикла кристаллизации. Избыток растворител (воды), поступающий в кристаллизационную камеру вместе с ненасыщенным раствором, удал ют из нее с помощью снстемы отбора конденсата в такомthe entire crystallization cycle. The excess solvent (water) entering the crystallization chamber together with the unsaturated solution is removed from it using a condensate extraction system in such
же количестве. Таким образом, пересыщение в растворе в течение всего цикла кристаллизации остаетс посто нным.same quantity. Thus, the supersaturation in the solution during the entire crystallization cycle remains constant.
Этим способом выращены оптические кристаллы дигидрофосфата кали весомOptical crystals of potassium dihydrophosphate with a weight of
2-2,5 кг в кристаллизаторе емкостью 4,5, пригодных дл использовани в приборах дл квантовой электроники.2-2.5 kg in a 4.5 capacity crystallizer suitable for use in devices for quantum electronics.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU711655597A SU425420A1 (en) | 1971-05-12 | 1971-05-12 | Method for growing crystals of potassium dihydrophos phate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU711655597A SU425420A1 (en) | 1971-05-12 | 1971-05-12 | Method for growing crystals of potassium dihydrophos phate |
Publications (1)
Publication Number | Publication Date |
---|---|
SU425420A1 true SU425420A1 (en) | 1982-08-30 |
Family
ID=20474915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU711655597A SU425420A1 (en) | 1971-05-12 | 1971-05-12 | Method for growing crystals of potassium dihydrophos phate |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU425420A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4517048A (en) * | 1983-10-31 | 1985-05-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for minimizing convection during crystal growth from solution |
US5123997A (en) * | 1989-10-30 | 1992-06-23 | The United States Of America As Represented By The United States Department Of Energy | Plenum type crystal growth process |
US6821339B2 (en) | 2000-01-31 | 2004-11-23 | Finnfeeds Finland Oy | Process for the crystallization of non-sucrose substances |
RU2717799C1 (en) * | 2019-10-16 | 2020-03-25 | Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" | Method of crystal growing from solution at constant temperature |
-
1971
- 1971-05-12 SU SU711655597A patent/SU425420A1/en active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4517048A (en) * | 1983-10-31 | 1985-05-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for minimizing convection during crystal growth from solution |
US5123997A (en) * | 1989-10-30 | 1992-06-23 | The United States Of America As Represented By The United States Department Of Energy | Plenum type crystal growth process |
US6821339B2 (en) | 2000-01-31 | 2004-11-23 | Finnfeeds Finland Oy | Process for the crystallization of non-sucrose substances |
RU2717799C1 (en) * | 2019-10-16 | 2020-03-25 | Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" | Method of crystal growing from solution at constant temperature |
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