SU425420A1 - Method for growing crystals of potassium dihydrophos phate - Google Patents

Method for growing crystals of potassium dihydrophos phate Download PDF

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Publication number
SU425420A1
SU425420A1 SU711655597A SU1655597A SU425420A1 SU 425420 A1 SU425420 A1 SU 425420A1 SU 711655597 A SU711655597 A SU 711655597A SU 1655597 A SU1655597 A SU 1655597A SU 425420 A1 SU425420 A1 SU 425420A1
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SU
USSR - Soviet Union
Prior art keywords
solution
potassium
crystallization chamber
dihydrophos
phate
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Application number
SU711655597A
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Russian (ru)
Inventor
И.В. Гаврилова
В.Б. Козин
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Специальное Конструкторское Бюро Ордена Трудового Красного Знамени Института Кристаллографии Ан Ссср
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Priority to SU711655597A priority Critical patent/SU425420A1/en
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Publication of SU425420A1 publication Critical patent/SU425420A1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Description

1one

Изобретение относитс  к способу получени  монокристаллов дигидрофосфата кали , которые используют в квантовой электронике .The invention relates to a method for producing potassium dihydrogen phosphate single crystals that are used in quantum electronics.

Известен способ выращивани  дигидрофосфата кали  из растворов при посто нной температуре с добавлением в процессе выращивани  исходного раствора в кристаллизационную камеру и отводом конденсата из нее.A known method of growing potassium dihydrogen phosphate from solutions at a constant temperature with the addition of the initial solution to the crystallization chamber during the cultivation process and removal of condensate from it.

Однако в кристаллизационной камере не поддерживаетс  посто нное пересыщение .However, constant supersaturation is not maintained in the crystallization chamber.

Цель изобретени  - поддержание в кристаллизационной камере носто нного пересыщени .The purpose of the invention is to maintain in the crystallization chamber a nonsaturated supersaturation.

Это достигаетс  тем, что в процессе выращивани  в кристаллизационную камеру добавл ют ненасыщенный раствор при комнатной температуре, а конденсат отвод т в количестве, равном количеству растворител , добавленному с раствором.This is achieved by adding an unsaturated solution to the crystallization chamber at room temperature during the growth process, and the condensate is removed in an amount equal to the amount of solvent added to the solution.

Пример. Путем синтеза, например, по реакции КОН + НзРО4 КН2Р04 + HsO из ранее приготовленной соли готов т насыщенный раствор данной концентрации. Раствор перегревают выше температуры его насыщени  на 1-2°С и заливают в кристаллизационную камеру с заранее укрепленными и нагретыми в нем затравками.Example. By synthesizing, for example, a KOH + H3PO4 KH2PO4 + HsO reaction is used to prepare a saturated solution of a given concentration from a previously prepared salt. The solution is superheated above its saturation temperature of 1-2 ° C and poured into the crystallization chamber with the seeds pre-fixed and heated in it.

Одновременно с этим к кристаллизационной камере подсоедин ют устройство дл  подпитки раствора и отвода конденсата. Вещество, с помощью которого производ т подпитку, ввод т в кристаллизационную камеру в виде водного раствора с температурой насыщени  ниже комнатной.At the same time, a device for feeding the solution and draining condensate is connected to the crystallization chamber. The substance with which the water is produced is introduced into the crystallization chamber in the form of an aqueous solution with a saturation temperature below room temperature.

Раствор дл  подпитки ввод т в кристаллизационную камеру непрерывно в течениеThe feed solution is introduced into the crystallization chamber continuously for

всего цикла кристаллизации. Избыток растворител  (воды), поступающий в кристаллизационную камеру вместе с ненасыщенным раствором, удал ют из нее с помощью снстемы отбора конденсата в такомthe entire crystallization cycle. The excess solvent (water) entering the crystallization chamber together with the unsaturated solution is removed from it using a condensate extraction system in such

же количестве. Таким образом, пересыщение в растворе в течение всего цикла кристаллизации остаетс  посто нным.same quantity. Thus, the supersaturation in the solution during the entire crystallization cycle remains constant.

Этим способом выращены оптические кристаллы дигидрофосфата кали  весомOptical crystals of potassium dihydrophosphate with a weight of

2-2,5 кг в кристаллизаторе емкостью 4,5, пригодных дл  использовани  в приборах дл  квантовой электроники.2-2.5 kg in a 4.5 capacity crystallizer suitable for use in devices for quantum electronics.

Claims (1)

Формула изобретени Invention Formula Способ выращивани  кристаллов дигидрофосфата кали  из раствора при посто нной температуре с добавлением в процессе выращивани  исходного раствора в кристаллизационную камеру и отводом кон34The method of growing potassium dihydrogen phosphate crystals from a solution at a constant temperature with the addition of the initial solution to the crystallization chamber during the growth process and the removal of end денсата из нее, отличающийс  тем,ненасыщенный раствор при комнатной темчто , с целью поддержани  посто нного пе-пературе, а конденсат отвод т в количестресыщени  в процессе выращивани , вве, равном количеству растворител , докристаллизационную камеру добавл ютбавл емому с раствором.Densate from it, characterized in that the unsaturated solution at room temperature in order to maintain a constant flow, and the condensate are removed in the amount of saturation during the growth process, equal to the amount of solvent, the pre-crystallization chamber is added with solution. 425420425420
SU711655597A 1971-05-12 1971-05-12 Method for growing crystals of potassium dihydrophos phate SU425420A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU711655597A SU425420A1 (en) 1971-05-12 1971-05-12 Method for growing crystals of potassium dihydrophos phate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU711655597A SU425420A1 (en) 1971-05-12 1971-05-12 Method for growing crystals of potassium dihydrophos phate

Publications (1)

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SU425420A1 true SU425420A1 (en) 1982-08-30

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
US5123997A (en) * 1989-10-30 1992-06-23 The United States Of America As Represented By The United States Department Of Energy Plenum type crystal growth process
US6821339B2 (en) 2000-01-31 2004-11-23 Finnfeeds Finland Oy Process for the crystallization of non-sucrose substances
RU2717799C1 (en) * 2019-10-16 2020-03-25 Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" Method of crystal growing from solution at constant temperature

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
US5123997A (en) * 1989-10-30 1992-06-23 The United States Of America As Represented By The United States Department Of Energy Plenum type crystal growth process
US6821339B2 (en) 2000-01-31 2004-11-23 Finnfeeds Finland Oy Process for the crystallization of non-sucrose substances
RU2717799C1 (en) * 2019-10-16 2020-03-25 Федеральное государственное учреждение "Федеральный научно-исследовательский центр "Кристаллография и фотоника" Российской академии наук" Method of crystal growing from solution at constant temperature

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