SU414555A1 - - Google Patents

Info

Publication number
SU414555A1
SU414555A1 SU1756269A SU1756269A SU414555A1 SU 414555 A1 SU414555 A1 SU 414555A1 SU 1756269 A SU1756269 A SU 1756269A SU 1756269 A SU1756269 A SU 1756269A SU 414555 A1 SU414555 A1 SU 414555A1
Authority
SU
USSR - Soviet Union
Prior art keywords
pulse
spectrometer
drain
gate
amplifier
Prior art date
Application number
SU1756269A
Other languages
English (en)
Russian (ru)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to SU1756269A priority Critical patent/SU414555A1/ru
Application granted granted Critical
Publication of SU414555A1 publication Critical patent/SU414555A1/ru

Links

Landscapes

  • Measurement Of Radiation (AREA)
SU1756269A 1972-03-07 1972-03-07 SU414555A1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1756269A SU414555A1 (ko) 1972-03-07 1972-03-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1756269A SU414555A1 (ko) 1972-03-07 1972-03-07

Publications (1)

Publication Number Publication Date
SU414555A1 true SU414555A1 (ko) 1974-02-05

Family

ID=20505635

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1756269A SU414555A1 (ko) 1972-03-07 1972-03-07

Country Status (1)

Country Link
SU (1) SU414555A1 (ko)

Similar Documents

Publication Publication Date Title
Otte et al. Characterization of three high efficiency and blue sensitive silicon photomultipliers
Acerbi et al. Cryogenic characterization of FBK HD near-UV sensitive SiPMs
Cova et al. A semiconductor detector for measuring ultraweak fluorescence decays with 70 ps FWHM resolution
US6541752B2 (en) Monolithic circuit of active quenching and active reset for avalanche photodiodes
Cova et al. Towards picosecond resolution with single‐photon avalanche diodes
Haitz Mechanisms contributing to the noise pulse rate of avalanche diodes
US4303861A (en) Photon detector system
EP1394567B1 (en) Radiation detector
Prokesch et al. Fast high-flux response of CdZnTe X-ray detectors by optical manipulation of deep level defect occupations
US7888648B2 (en) Radiological measurement system and radiological imaging system
US10107921B1 (en) Radiation detector and X-ray imaging system
CN111121986A (zh) 一种具有后脉冲校正功能的单光子探测系统
US20240111049A1 (en) Method for gating an output of a single photon avalanche diode (spad) cluster based on an ambient count of ambient light events generated by the spad cluster in a region of interest of a time of flight (tof)
SU414555A1 (ko)
US3996599A (en) Image detector with background suppression
Perenzoni Single-photon avalanche diode-based detection and imaging: Bringing the photodiode out of its comfort zone
Nashashibi The Pentafet and its applications in high resolution and high rate radiation spectrometers
US5322995A (en) Charge integration preamplifier for use in radiation detection circuitry
Kim et al. Development of circuit integrated monolithic SOI-SiPM for radiation detection
JPH04364496A (ja) 半導体検出器用前置増幅器
US3453435A (en) Avalanche photodetector utilizing an a-c component of bias for suppressing microplasmas
Lee et al. Self-quenching, forward-bias-reset for single photon avalanche detectors in 1.8 v, 0.18 µm process
SU530565A1 (ru) Полупроводниковый спектрометр дерных излучений
US20210318417A1 (en) Light detection device
Park et al. High-speed gate-mode single photon detection module using dual anode single photon avalanche diode