SU406557A1 - P and C ^ PRPGS INVENTIONS 406557 - Google Patents
P and C ^ PRPGS INVENTIONS 406557Info
- Publication number
- SU406557A1 SU406557A1 SU1465112A SU1465112A SU406557A1 SU 406557 A1 SU406557 A1 SU 406557A1 SU 1465112 A SU1465112 A SU 1465112A SU 1465112 A SU1465112 A SU 1465112A SU 406557 A1 SU406557 A1 SU 406557A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- prpgs
- inventions
- palladium
- tube
- temperature
- Prior art date
Links
Description
СПОСОБ ИЗГОТОВЛЕНИЯ ДИФФУЗИОННЫХ ЭЛЕМЕНТОВMETHOD OF MAKING DIFFUSION ELEMENTS
1one
Изобретение относитс к способам изготовлени диффузионных элементов дл разделег .и газовых смесей.The invention relates to methods for the manufacture of diffusion elements for separating gas mixtures.
Известен способ изготовлени диффузионных элементов, заключающийс в том, что з тонкостенную палладиевую трубку вставл ют металлическую пористую трубку.A known method of manufacturing diffusion elements is that a metal porous tube is inserted into the thin-walled palladium tube.
Иедостатком известного способа вл етс мала прочность изготовлени элемента, вызБ пна наличием зазора между трубками.The disadvantage of this method is the low strength of the manufacture of the element, caused by the presence of a gap between the tubes.
С целью повышени прочности готовых элементов по предложенному способу палладиевые трубки заполн ют металлическим noponiком с последующим нагревом их до температуры 600--1400 С.In order to increase the strength of the finished elements according to the proposed method, the palladium tubes are filled with a metal noponi, followed by heating them to a temperature of 600-1400 C.
Способ реализуетс следующим образом.The method is implemented as follows.
Тонкостениа палладиева трубка заполн 2Palladium tube filling 2
етс металлическим порошком н нагреваетс до темнературы 600 - 1400°С. При этой температуре в трубке происходит образование жесткого пористого каркаса за счет спекани крупипок металла. Каркас плотно прилегает к поверхпостп трубкп и обеспечивает возможность создани па элементе перепада давлени ло 300 .The metal powder is heated to a temperature of 600-1400 ° C. At this temperature, a rigid porous skeleton is formed in the tube due to sintering of grained metal. The frame fits snugly to the surface of the tube and allows the pressure differential 300 to be created on the element.
Предмет изобретени Subject invention
Способ изготовлени диффуз1101ППз1х элементов из т нутых палладиевых трубок, отличающийс тем, что, с целью повышепн прочности готовых элементов, палладиевые трубки заполн ют металлнческим порошком и затем нагревают до температуры 600 - 1400С.A method of manufacturing diffraction elements of palladium tubes, characterized in that, in order to increase the strength of the finished elements, the palladium tubes are filled with metal powder and then heated to a temperature of 600-1400C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1465112A SU406557A1 (en) | 1970-07-08 | 1970-07-08 | P and C ^ PRPGS INVENTIONS 406557 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1465112A SU406557A1 (en) | 1970-07-08 | 1970-07-08 | P and C ^ PRPGS INVENTIONS 406557 |
Publications (1)
Publication Number | Publication Date |
---|---|
SU406557A1 true SU406557A1 (en) | 1973-11-21 |
Family
ID=20455901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU1465112A SU406557A1 (en) | 1970-07-08 | 1970-07-08 | P and C ^ PRPGS INVENTIONS 406557 |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU406557A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0437110A2 (en) * | 1990-01-08 | 1991-07-17 | Lsi Logic Corporation | Tungsten deposition process for low contact resistivity to silicon |
-
1970
- 1970-07-08 SU SU1465112A patent/SU406557A1/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0437110A2 (en) * | 1990-01-08 | 1991-07-17 | Lsi Logic Corporation | Tungsten deposition process for low contact resistivity to silicon |
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