SU1629913A1 - Method of modelling of pressure field for circulation flow about flat sections - Google Patents

Abstract

The invention relates to analog computing and is intended to investigate the circular flow of a fluid or gas around a profile. The purpose of the invention is to improve the accuracy and reduce the time for determining the pressure field. A variant of the method implementation uses two installations made respectively by analogy B and by analogy A0 Installations contain a sheet of electrically conductive paper of rectangular shape 1, on which the input and output tires 2 and 30 sets are located a probe 5 is attached to measure the electric potential. Achieving this goal is achieved by dividing the second sheet of conductive paper along the transferred critical line. current insulation parts separated from each other and defined by fixing the floor pressure separately in the two parts of the second sheet of conductive paper 2 yl. h SS (L

Description

R

I

&

00

The invention relates to analog computing, and is designed to investigate the circulation flow of a fluid or gas profile.

The purpose of the invention is to improve the accuracy and reduce the time for determining the pressure level

Fig. 1 shows a geometric model for pressure (analogs B); Fig 2 - the same (analogs A) „

Each of the models contains a sheet of 1 electrically conductive paper of the right-angled form, on which 5 input 2 and output 3 tires are located. The model 4 of the profile under study is made by analogy B (figure 1) from a low-resistance metal and from a dielectric by analogy A (FIG. .2). To models offers - 20 with probe 5 for measuring electric potential. The critical current line in Fig. 1 and the section in Fig. 2 are indicated with position 6. The models have a source 7 of current and a divider 8 of voltage 25 by analogy B (Fig. 01) o

The method is carried out as follows.

When the current source 7 is switched on between 6o. Then, using the current source 7, the voltage is applied to the vertical busbars and the pressure gauge 5 relieves the pressure distribution in the model 4 flow field.

Claims (1)

Invention Formula A method of simulating a pressure field in a circulating flow around a flat profile, based on placing a geometric model of a flat profile of conductive material on the surface of the first semi-conducting medium, forming in the first semi-conducting medium by changing the potential on the geometric model of a flat electric field profile corresponding to the design the conditions of vanishing of the critical current line from the sharp edge of the profile model (analogs B), placed on the surface of the second semiconducting medium model of a flat profile made of a dielectric material and measurement on the surface of the second semiconducting medium given by the means of external electrodes of the parameters of the electric field, displayed by the logs A), that for the input 2 and output 3 tires of the pressure field, which determines the pressure field (the current simulating the external flow around the model 4 by analogy B (Fig 1) without circulation is regulated; By adjusting the voltage on the model 4 using a divider 35 c of circulation from the condition of the critical current line dropping from the sharp trailing edge of the profile. The position of the critical current line is found by the probe 5 and thereby set the boundary conditions, after which this line is transferred to the model by analogy A (Figs2) to the form of isolated parts of the cut in order to improve the accuracy and reduce the time for determining the pressure field, the second semiconducting medium consists of two parts, which isolate one from the other along the critical current line measured in the first semiconducting medium and then the electric field parameters semiconducting medium. measured and fixed separately in both parts of the second semiconducting medium. -v 16299134 6o Then, with the help of a current source 7, voltage is applied to the vertical tires and the probe 5 relieves the pressure distribution in the flow field of the model 4 " Invention Formula A method of simulating a pressure field in a circulating flow around a flat profile, based on placing a geometric model of a flat profile of conductive material on the surface of the first semi-conducting medium, forming in the first semi-conducting medium by changing the potential on the geometric model of a flat electric field profile the conditions of vanishing of the critical current line from the sharp edge of the profile model (analogs B), placed on the surface of the second semiconducting medium model of a flat profile made of a dielectric material and measurement on the surface of the second semiconducting medium given by the means of external electrodes of the parameters of the electric field, displayed by the logs A), that defined pressure field (ana in order to improve the accuracy and reduce the time for determining the pressure field, the second semiconducting medium consists of two parts, which isolate one from the other along the critical current line measured in the first semiconducting medium and then the electric field parameters semiconducting medium. measured and fixed separately in both parts of the second semiconducting medium. -J FIG. 2