SU1626313A1 - Controlled crystal-controlled oscillator - Google Patents

Abstract

This invention relates to radio engineering and can be used as a source of highly stable electrical oscillations. The purpose of the invention is the extension of the frequency tuning range. The controlled crystal oscillator contains a non-inverting amplifier (LC) 1, transistors (T) 2 and 5, a resistive voltage divider 3, a crystal oscillator (RC) A, resistors 6, 7 and 8, a capacitor 9 and a field-effect transistor (PT) 10. When the conditions of phase and amplitude balance are satisfied, continuous oscillations occur. T 2 and 5, PT 10 and capacitor 9 form a phase shifter, which is connected in series with RC 4. When the resistance of PT 10 changes, the phase shift introduced by the phase shifter changes, and, as a consequence, the generation frequency. The resistive divider 3, the first 6, the second 7 and the third 8 resistors provide the DC mode for NU 1, and only for T 2 and 5. 1 Il. CL with SC to and with CJ

Description

This invention relates to radio engineering and can be used as a source of highly stable electrical oscillations.

The purpose of the invention is the extension of the frequency tuning range.

The drawing shows a structural electrical circuit of a controlled quartz oscillator.

The controlled crystal oscillator contains a non-inverting amplifier 1, the first transistor 2, a resistive voltage divider 3, a crystal resonator 4, the second transistor 5, the first 6, the second 7 and the third 8 resistors, the capacitor 9, the field-effect transistor 10.

The controlled quartz oscillator operates as follows.

When the phase balance and amplitude balance conditions are satisfied, continuous harmonic oscillations occur in the controlled quartz oscillator.

A change in the phase characteristic of an element connected in series with a quartz resonator 4 changes the frequency of regeneration. Such an element is a phase shifter formed by the first 2 and second 5 transistors, the field effect transistor 10 and the capacitor 9.

The change in the phase characteristic of such a phase shifter is ± 90 ° with a change in voltage at the gate of the field-effect transistor 10. The generation occurs at a frequency at which the sum of the phases of the phase shifter and the crystal resonator 4 is zero. If the phase shifter is changed in the range of ± 90 °, then the phase of the quartz resonator should also be changed in the range of ± 90 ° to balance the phases. This phase value quartz0

five

0

five

0

five

0

A resonator exists at significant mismatches from the nominal frequency of the quartz resonator.

Claims (1)

Resistive divider 3, as well as the first 6, second 7 and third 8 resistors provide the DC operation mode of the first 2 and second 5 transistors, the invention claims Managed crystal oscillator containing a non-inverting amplifier, the first transistor, the emitter of which is connected through the first resistor to common bus, resistive voltage divider, which is connected between the power bus and the common bus, the tap of which is connected to the base of the first transistor, quartz resonator, the first pin of which is connected to the non-inverting input the amplifier, while the output of the non-inverting amplifier is connected to the base of the first transistor, characterized in that, in order to expand the frequency tuning range, a second resistor is inserted, which is connected between the collector of the first transistor and the power bus, the second transistor, the base and the collector of which are connected respectively to the collector the first transistor and the power bus, the third resistor, which is connected between the emitter of the second transistor and the common bus, a field effect transistor, the source of which is connected to the emitter of the first transistor The capacitor, which is connected between the emitter of the second transistor and the drain of the field-effect transistor, while the drain of the field-effect transistor is connected to the second output of the crystal, the gate of the field-effect transistor is the input of the control of the frequency of the controlled crystal.