SU1425801A1 - Quartz oscillator - Google Patents

Description

(21) 4218572 / 24-09

(22) 03/31/87

(46) 09/23/88, Bull. No. 35

(71) Minsk Radio Engineering Institute

(72) A.I. Korzun, S.D.Shpot, N.N.Anisimov and A.P.Razumovsky

(53) 621.373.5 (088.8)

(56) Swiss Patent No. 641316,; H 03-B 5/36, 1984.

US patent number 4211985, cl. 331-116, 1980-.

(54) QUARTZ GENERATOR

(57) The invention relates to electronic engineering and can be used in electronic clocks. The purpose of the invention is to reduce the startup time of quartz g. T-i contains inverting amplifiers (DUT) 1 and 2, quadrupole feedback 3

a quartz resonator, p - channel MOS transistors 4 and 5, p - channel MOS transistors 6 and 7, capacitors 8-10 and resistors 11 and 12. When the supply voltage (NP) changes, the amplitude of oscillations at the input of Mr. within limits. An increase in the NP leads to an increase in the current of the DUT 1, an increase in the amplitude, an earlier unlocking of the MOS transistor 4 and deeper locking of the MOS transistors 5 and 7. When qHHseHMH the NP MOS transistor 4 opens later or does not open completely, MOS transistors 5 and 7 open and coefficients. The amplification of the DUT increases, which leads to stabilization of the amplitude of the output oscillations. The goal is achieved by providing the maximum coefficient -. Of gain of PS 1. 1. Il.

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The invention relates to electronic engineering and can be used in electronic watches.

The purpose of the invention is to reduce the startup time.

In principle, the electrical circuit diagram of the quartz oscillator is shown.

The quartz oscillator contains the first 1 and second 2 inverting amplifiers, quadripole 3 feedback with a quartz resonator, the first

4 and the second 5 p-channel MOS transistors, the first 6 and the second 7 p channel MOS transistors 5 first 8, second 9

and third 10 capacitors ;, first 11 and second 12 resistors. The first .inverting amplifier 1 contains an n-channel MOS transistor 13; p-channel ™ Hbrfi MOSFET 14, resistors 15 and 16J, capacitors 17 and 18 "The second inverting amplifier 2 contains a n-channel; aly-1st MOS transistor 19, a single-MAY transistor 20,

Quartz geyenator works blindly

When applying the -E voltage to the power bus, the capacitors 17 and 18 of the first inverting amplifier 1 are discharged j the junction MOS transistor 13 of the first inverter impedance 1 rests. The source potential of the second p-channel MOS transistor 5 becomes ™ equal to E, is also unlocked and connects the drains of the p- and p-channel MOS transistors 13 and 14 of the first inverting amplifier 1 With this potential of the second p-channel MOSFET 7 tends to Efi / 2 and it opens

Since kgsshr nsheni on the gates of the second n-rocky MOS transistor

5 and the second p of the channel MOS transistor 7 for more voltages and their drains, then the operating currents are

in the steep volyampere range, the resistance of the channels is small; therefore, the voltages of the n-channel and p-channel MOS transistors 13 and 14 of the first inverting amplifier 1 differ slightly and are approximately equal to,. Through them, a significant initial TOKs occurs and the gain factor: the first inverting amplifier 3 is maximal, which allows to reduce the start time,

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0 5

0 h 0

d

0

five

When the voltage difference across the gate and drain of the n-channel MOS transistor 19 of the second inverting amplifier 2 of the threshold voltage of the first n-channel MOS transistor 4 is exceeded, the latter is unlocked and the third capacitor 10 is charged, depending on the time of the channels of the n-channel MOS -transistor 19 of the second inverter Ousi eel 2 and the first p-channel MOS transistor 4 in the open state and the resistance of the open channels.

The resistance of the third resistor 12 is chosen such that the discharge time of the third capacitor 10 is substantially longer than the charging time constant, therefore, as the third capacitor 10 charges, the first p-channel MOS transistor 6 starts to open. At the same time, the resistance of the channels of the second p-channel MOS transistor V and the second p-channel MOS transistor 5 begins. This leads to a decrease in the currents j consumed by the first 1 and second 2 inverting amplifiers. With an appropriate choice of the parameters of the first 4 and second 5 p-channel MOS transistors of the first 6 and second 7 p-channel MOS transistors and the resistance of the first P and second 12 rez cTopOBj operating points of the n- and p-channel MOS transistors 13 and 14 of the first inverting amplifier 1 and p- and p-channel .MOS transistors 19 and 20 of the second inverting amplifier 2, are installed in subthreshold areas of the current-voltage characteristic, providing the operation mode of the first 1 and second 2 inverting amplifiers in class B or C.

The energy required to maintain the oscillations in the quadrupole Zr is filled through the first 8 and second 9 capacitors. Resistors 15 and 16 and capacitors 17 and 18 of the first inverting amplifier 1 provide a constant current mode.

The proposed crystal oscillator allows the amplitude of the output oscillations to be maintained within the specified limits when the supply voltage changes, as an increase in the supply-to-voltage voltage leads to an increase in the current of the first inverting amplifier 1, an increase in amplitude, and an earlier unlocking of the first n-channel MOS transistor 4 and deeper locking of the second n-channel MbP-transistor 5 and the second p-channel MOS transistor 7. When the power supply voltage is tapped, the first n-channel transistor 4 opens later or does not open mc completely, the second p-channel MOS transistor 5 and the second p-channel MOS transistor 7 open, the gain of the first inverting amplifier 1 increases, which leads to stabilization of the amplitude of the output oscillations.

Claims (1)

Invention Formula A quartz oscillator containing a first and second inverting amplifiers and a quadrupole reverse feedback to a quartz resonator, the output of which is connected to the input of the first inverting amplifier, while the first inverting amplifier consists of a p-channel MOS transistor and a p-channel MOS transistor, the gate and the drains of each of which are connected. through the corresponding resistors, and the first terminals of the respective capacitors are connected to the gates of each of which, the second terminals of which are combined and are the input of the first About the inverting amplifier, the source and the substrate of the n-channel transistor of the first inverting amplifier are connected to the power bus, the source and the substrate of the p-channel MOS transistor of the first inverting amplifier are connected to a common bus, the second inverting amplifier consists of a p-channel MOS transistor and p-channel MOS transistor, the drains of which are combined and are the output of a quartz oscillator, and the sources and gates of each of which are connected respectively to the power bus and the common bus, characterized in that the target is reduced start-up time, the first and second n-channel MOS transistors, the first and second p-channel MOS transistors, the first, second and third capacitors, the first and second resistors, with the gate, as well as the combined source and under, MOSFET transistor connected respectively to the gate and drain of the n-channel transistor of the second inverting amplifier, the drain of the first n-channel MOP transistor is connected to the gates of the second p-channel MOS transistor and the first p-channel MOSFET of the second p-channel The MOS transistor, the source of the second n-channel MOS transistor and the gate of the first p-channel MOS transistor are connected to the drain of the n-channel MOS transistor of the first inverting amplifier, the source of the second p-channel MOS transistor and the drain of the second n-channel The MOS transistor is connected to the drain of the p-channel MOS transistor of the first inverting amplifier and the gate of the p-channel MOS transistor inside the inverting amplifier, the source and the substrate of the first p-channel MOS transistor are connected to a common bus, the substrate of the second p-channel The MOSFET transistor and the substrate of the second p-channel MOS transistor are connected respectively to the power supply bus and the common bus; the first and second capacitors are connected between the quadrupole feedback input of the quartz resonator and the drain of the p-channel MOS transistor and p- the channel MOS transistor of the first inverting amplifier, the first resistor is connected between the drain of the first p-channel MOS transistor and the power supply, the second resistor and the third capacitor are connected between the gate of the first p channel MOS-trans stories and common bus, and the gate of the second p-channel MOS transistor is connected to the drain of the first p-channel MOS transistor,