SU1405108A1 - Transistor gate - Google Patents

Abstract

The invention relates to a pulse technique and can be used in devices for switching currents of high frequency frequency converters. The invention makes it possible to increase the speed of a transistor switch in a wider range of switched currents, which is achieved by reducing the time dependence of the transistor switch on the magnitude of the switched current. The transistor switch contains a transistor 1, diodes 2 and 3, a capacitor 4, a current sensor 5, a controlled current source 6, a control pin 7, a load 8, the first 9 and the second 12 buses of a power source,. the first 10 and second 11 tires of the auxiliary power source. The speed of the proposed device is higher than that of the well-known transistor switches in a wider range of switched currents. This is achieved by reducing the time dependence of the thyristor's locking on the value of the switched current. 1 il. yu b (l. o sp og

Description

The invention relates to a pulse technique and can be used in devices for switching currents of high-frequency energy converters.

The purpose of the invention is to increase the speed of a transistor switch in a wider range of switched currents by reducing the time dependence of Q of locking the transistor on the value of the switched current. The drawing shows a diagram of a transistor switch.

The transistor switch contains a transistor 1, a first 2 and a second 3 diodes, a capacitor 4, a current sensor 5 and a controlled current source 6, the base of transistor 1 being connected to the control bus 7, and a collector connected to the first terminal of the first diode 2 and through the load 8 with the first bus 9 of the power source, the second lead of the first diode 2 through the second diode 3 is connected to the first bus 10 25 of the auxiliary power source and one lead of the capacitor 4, the other lead of which is connected to the second bus 11 of the auxiliary power source by the emitter trans Page 1, the first and second outputs of the controlled current source 6 are connected respectively to the second output of the first diode 2 and the first bus 10 of the auxiliary power supply; the second bus 11 of the auxiliary power supply 35 is connected to the first output of the current sensor 5 and one input of the controlled source 6 current, the other input of which is connected to the second output of current sensor 5 and the second bus 12 of the power supply source.

Transistor key works as follows.

When the triggering signal d is applied to the control bus 7, transistor 1 comes into contact; Fig. 1. Image of load current flow circuit - load 8 - transistor 1 - current sensor 5 - -E From this moment the accumulation of charge by an inertial diode begins. 2, The output voltage of the current sensor 5 is control for the controlled current source 6 supplying the inertia diode 2, whereby the accumulation current of the inertia diode 2 flowing through the c-epi -E output current stage 6 of the inertial diode 2 - transistor 1 - -Eg,

thirty

Q

n 5 5

0

proportional to the load current 8о1а ot. 1 ,,, ci const.

When a blocking pulse is applied to the bus 7 in transistor 1, a resorption process takes place, after which it begins to increase its collector voltage. When this voltage reaches the level of E. current

about

the collector of transistor 1 becomes equal to the load current 8. At this time, The diode 3 is shifted in the forward direction, shunting the output stage of the current source 6 and creating a circuit of the shut-off current, consisting of a 2.3 T diode of the capacitor 4, in parallel with which the internal resistance of the EJ source is connected. From this moment on, the collector current of transistor 1 begins to drop sharply, which is almost not accompanied by an increase in its collector voltage, since diode 2 has a low reverse resistance at this moment. The inductance energy of the load 8 is transmitted through diode 3 and diode 2, in which the resorption process begins, to the source Ec. After the resorption stage of diode 2 is completed, its reverse resistance is restored, after which the current consumption from source E, ceases.

The performance of the proposed transistor switch is higher than that of the known transistor switches in a wider range of switched currents by reducing the time dependence of the transistor locking on the value of the switched current.

Claims (1)

Invention Formula A transistor switch containing a transistor, the first and second diodes, a capacitor, the base of the transistor is connected to the control bus, and the collector is connected to the first output of the first diode and through the load to the first bus of the power source, the second output of the first diode an auxiliary power source and one terminal of a capacitor, the other terminal of which is connected to the second bus of the auxiliary power source and the emitter of the transistor, characterized in that, in order to increase speed, edena 31 doses 108 a current sensor and a controlled power supply source connected to the first current, the first and second outputs of which by the output of the current sensor and one input They are connected respectively to a second-controlled current source, another th output of the first diode and the first input of which is connected to the second bus auxiliary source pi. the current sensor and the second bus tannin, second tire auxiliary power source.