SU1368963A1 - Shaper of signals with level limitation - Google Patents

Description

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The invention relates to a pulse technique and can be used in devices for forming, converting and limiting signals.

The purpose of the invention is to expand the functionality of the device, which consists in expanding the range of input and output resistances and the implementation of limiting the output signal level.

The goal is achieved by introducing a current generator and two field-effect transistors by using the high resistance of one field-effect transistor across the gate and fixing the gate potential of the other field-effect transistor using a series of forward-displaced diodes loaded on the current generator.

The drawing is a schematic diagram of the former.

The driver contains the first 1 and second 2 diode chains, the first 3 and second 4 current generators, the first 5 and second 6 field effect transistors

The first 1 and second 2 diode chains are connected with opposite poles between the gate of the first field-effect transistor 5 and the total length 7. The first current generator 3 is connected between the first power bus 8 and the output terminal 9 of the device, and the second current generator 4 is connected between the second power bus 10 and output terminal 9 of the device. The gate of the second field-effect transistor 6 is connected to the input terminal 11 of the signal conditioner. The field-effect transistors 5 and 6 are connected in series between the output terminal 9 of the device and the first power line 8.

The shaper works as follows.

A gate voltage is applied to the gate of the first field-effect transistor 5, which is formed by the first current generator 3 and one of the diode circuits. A gate signal is supplied to the gate of the second field effect transistor 6 from the input terminal j, which can have any polarity with respect to the common bus 7.

When unlocking the second field-effect transistor 6, the potential at the connection point of the transistors increases and at the output terminal 9 a potential equal to the difference between the voltage at the connection point of the field-effect transistors 5 and 6 and the drop on

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the voltage on the first field-effect transistor 5, which is set by the current set by the second generator 4 of the current.

As the input signal at the gate of the second field-effect transistor 6 increases, the voltage at the output terminal 9 increases to a value equal to the voltage at the gate of the first field-effect transistor 5 plus the cut-off voltage. The voltage at the output terminal 9 of the device does not further change, since the potential of the gate of the first field-effect transistor 5 is fixed by the first forward-displaced diode circuit 1.

When the second field-effect transistor 6 is locked, the gate-to-source transition of the first field-effect transistor 5 goes to the direct-shifted state, the first diode chain 1 is locked, and the second diode chain 2 is unlocked. At the output terminal 9 of the device, a potential is set equal to the voltage drop on the diode circuit 2 and the gate-to-source transition of the first field-effect transistor 5. The current value of the second current generator 4 is chosen larger than the current of the first current generator 3.

With a further decrease in potential at the input terminal 11, the second field effect transistor 6 remains closed and the potential of the output terminal 9 does not change.

Since the input terminal 11 is connected to the gate of the field-effect transistor, a high input resistance of the device is provided, and a low value of the output resistance is provided by the current of the second current generator 4 and the operation of the first field-effect transistor in the region of the field. The control range of the output signal limiting level is determined by both the currents of both current generators and the number of diodes in the diode strings, and the output signal can be polarized with different limiting thresholds.

Claims (1)

Invention Formula A shaper signal generator with a level limit containing the first current generator, the first output connected to the first power bus, and two diode strings connected in parallel with opposite poles and connected connected to the common busbar, the current torus is connected between the output terminal characterized in that the second power bus, the shutter the purpose of expanding the functional potential of a field-effect transistor connections, a second gene is inserted into it with the input terminal of the driver the current rator and two field transistors, and the gate of the first field transistor pa, the first and second field-effect transistors are connected to the combimenters connected in series by the second terminals between the output terminals of the output terminal of the wilted current generator and the two diode the first power bus, the second generation of Q chains.