SU1343515A1 - Apparatus for controlling high-power high-voltage transistor gate - Google Patents

Abstract

This invention relates to electrical engineering and can be used in key power amplifiers. The aim of the invention is to increase efficiency. In this device, the high-voltage switch 1 on the transistors 2 is controlled by a low-voltage high-frequency transistor 5, which ensures small losses in the resorption circuit of the charge carriers from the high-voltage transistors. The forced switching on of high voltage transistors is carried out using the energy stored in the capacitor 8 during the resorption interval, which ensures a reduction in the control power. 2 Il.

Description

one

The invention relates to electrical engineering and can be used in key power amplifiers, inverters, switching regulators of power supply systems and electric drives at high supply voltages, for example, during transformer rectifying of the mains voltage.

The purpose of the invention is to increase efficiency.

FIG. 1 is a schematic of the device CTBaj in FIG. 2 is a diagram of the device when using a p - n - p conductivity control transistor.

The powerful high-voltage switch 1 consists of N parallel-connected high-voltage transistors 2, the collectors of which are connected to the second output terminal 3, and the base to the terminals 4.

The device (FIG. 1) for controlling a high-power high-voltage transistor switch 1 contains a powerful high-frequency control transistor 5, the E1 1 of which is connected to the first output terminal 6 of the key 1, and the collector to the terminal 7 connected to the emitters of the high-voltage transistors 2 key 1. Capacitor 8 is connected to the first output terminal 6 by one output and the other terminal is connected to the terminals 4 keys 1 via N chains 9, each of which consists of parallel connected resistors 10 and diode 11, the generator 12 control pulses first pin 3 to The key to the first key output terminal 6, and the second terminal 14 via the resist 15 is connected to the base of the control transistor 5, and through diode 16 and current-limiting resistors 17 N - key to the terminals 4 1 ..

The device (Fig. 1) works as follows.

In the conduction intervals of the key 1 when the signal at the output pins 13 and 14 of the control pulse generator 12 has the polarity indicated without brackets, the control current flows through the first series circuit: output 14 - diode 16 resistors 17 - base emitter junction of high-voltage transistors 2 keys 1 - the collector-emitter of the control transistor 5 - output 13 of the generator 12, and the second serial circuit: pin 14 - the resistor 15 - base-emitter junction of the control transistor 5 - output 13 of the generator 1, supports control

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the driving transistor 5 and the high-voltage resistance of the switch 2 of the key 1 in the saturated state. The load current flows through the circuit: the second output terminal 3 - parallel-connected high-voltage transistors 2 - the control transistor 5 - the first output terminal 6 of the switch 1,

When the polarity of the signal at the terminals 13 and 14 of the generator 12 (the polarity is indicated in brackets) is changed, the control transistor closes (to decrease the absorption time it can be undescended), disconnecting the emitters of the high voltage transistors 2 from the output terminal 6. Due to the fact that the high voltage transistors more inertial and have a greater absorption time than the low-voltage and high-frequency control transistor 5, they remain in a saturated state. The load current begins to flow through the base-collector junctions of high-voltage transistors 2, diodes 11 of chains 9, capacitor 8 and output terminals 6 and 3. As a result, under the action of the load current, capacitor 8 is charged and resorption of charge carriers from the collector and base layers of high-voltage tran - key 1 resistors with their base-emitter transitions turned off, i.e. High-voltage transistors are locked in a common base circuit. At the end of the resorption process, the high voltage transistors 2 are locked, the charge of the capacitor 8 stops and its potential remains unchanged until the end of the period (without taking into account the leakage current,

With the appearance of a triggering voltage pulse at terminals 13 and 14 of generator 12 (polarity without brackets), control transistor 5 and high-voltage transistors 2 of key I are unlocked and capacitor 8 is discharged through resistors of 10 chains 9 base-emitter junctions of high-voltage transistors 2 and transistor 5. High-voltage switching of high-voltage transistors occurs, which is carried out not by increasing the power consumption from the generator 12, but due to the energy stored in the capacitor 8 during the resorption interval leu charge.

Thus, the device has an increased efficiency due to a decrease in

losses in the resorption circuit of charge carriers from high-voltage transistors

When using a control transistor p - n - p-conductivity (Fig. 2, the device is simplified by eliminating Diode 16 and resistor 15. In addition, the control power consumed from the generator 12 is reduced, as the control current flows in series through the base- emitter junctions of high voltage transistors and a base emitter junction of the control transistor.

Claims (1)

Invention Formula A device for controlling a powerful high-voltage transistor switch consisting of N parallel-connected high-voltage transistors, containing a generator of control pulses, the first terminal of which is intended to be connected to the output terminal of the switch, current-limiting resistors, only one terminals of which are intended to be connected to high-voltage bases key transistors, a powerful high-frequency control transistor, the emitter of which is connected to the first output terminal of the key, and the collector count is intended for Switches to emitters of high-voltage transistors, a key, characterized in that, in order to increase efficiency, it is equipped with a capacitor, N chains, each of which consists of a parallel-connected resistor and a diode, an additional diode and an additional resistor, and some of the conclusions of these N chains are designed for connecting to the bases of high-voltage transistors of the key, and others to the first terminal of the capacitor, the second terminal of which is connected to the first output terminal of the switch, the second terminal of the generator of control pulses connect To the second combined terminals of the current-limiting resistors through an additional diode and to the base of the control transistor through an additional resistor. Fig2 Compiled by V. Bunakov Editor A. Kozoriz Tehred M. Khodanich Proofreader A. Ilyin 4834/54 Circulation 659 Subscription VNIIPI USSR State Committee for inventions and discoveries 113035, Moscow, Zh-35, Rauschska nab., 4/5 Production and printing company, Uzhgorod, st. Project, 4