SU1203041A1 - Glass and method of producing same - Google Patents

Abstract

1. Glass, including, ZnO, BaO,, characterized by the fact that, in order to increase the dielectric constant, it contains these components in the following ratio,% by mass: 51.20-52.50 ZnO. . 9.96-10.20 BAO 20,12-20,76 BjOj 16,54-18,40 2. Glass creeping method in the system Vz.0s - - ZnO - BaO by boiling it at 1100-1200 ° C in an oxygen-producing environment, characterized in that, in order to increase the dielectric constant, oxygen is melted in the glass and the production is carried out by casting with centrifugation in an oxygen stream.

Description

The invention relates to the behavior of electronic instrumentation and can be used in the preparation of homogeneous vitreous materials for the manufacture of capacitors and components of the interlayer insulation of large hybrid circuits.

In electronics, low-melting borate and boro-silicate glasses containing lead oxide, copper, alkaline earth elements, as matrix materials are used to manufacture glass-ceramic capacitors and components of interlayer iso-large hybrid circuits.

Increasing the values of dielectric constant in capacitor materials, as well as obtaining high conductivity of resistors, is achieved by reducing the glass content (low) in the material composition. An increase in the dielectric constant and dielectric loss tangent is achieved by introducing 30–70% polydisperse oxide phases into glass, which leads to a deterioration of the technological characteristics, a higher cost of the technological process, and instability of the properties of these composite materials under the conditions of

operation. I

The purpose of the invention is to increase the dielectric constant.

Specific compositions of glasses are given in Table. one; The main properties of glasses are in the table. 2

Table 1

table 2

Indicators

t t

ip

d, g / cm

607070

480480480

3.09 3.113.12

dga Hj, 6,% 5,24,05,0

20 h roo6,26,26,8

From tab. 2 it follows that the proposed glass have a high dielectric constant (60-70).

Example. The synthesis is carried out in alundum or corundum crucibles with a capacity of up to 0.5 l. The mixture fall asleep

in the crucible heated to 500-550 ° C, at this temperature the crucible is placed in the furnace and the temperature in the working cavity of the furnace rises to 600-650 ° C, at this temperature de5

0

3

0

Launch 30 min. At 500 ° C, argon is fed into the working cavity of the furnace, i.e. to prevent the V-V transition in the solid phase of the glass transition reaction, prior to the appearance of the melt. After 30 minutes, the temperature rises from 600 - 650 to 1150 ° C and oxygen is supplied to the furnace. Twenty minutes after the melt is formed, the alundum tube with slots is lowered into the crucible with the melt and oxygen is fed into the melt for 30 min at a flow rate of 15–20 l / h for 30 min.

The production is carried out in a device such as a centrifuge on a rotating

1E

a rotary body with a perforated nozzle (the rotation speed of the rotary body is 5000 rpm). Oxygen is supplied to the centrifuge working space at a flow rate of 30 l / h. As a result, a centrifuge is formed on the centrifuge pan, and it is easy to remove e3. 1203041 4

from the pallet. The diameter of the balls of the material parameters in the process

glass 1-2 mm. operation.

 The resulting homogeneous glassworm

The glassy material obtained in this way for capacitors is digested with various methods5 by electrical permeability.

in product configuration and 60-70, ensures stable

dimensions. reproducibility of properties, i.e.

The proposed glass, when used, is important for microelectronics, ensures the stabilization of the technological problem of the connotation of properties (in the process of synthesis 10, the structural study of the components and the composition is stable) and the physicochemical characteristics of modern devices.

Claims (2)

1. Glass, including Y _g 0 ₅ , ZnO, BaO, V _g 0 ₃ , characterized in that, in order to increase the dielectric constant, it contains these components in the following ratio, wt.%: Y _g 0 ₅ 51.20-52.50 ZnO. 9.96-10.20 Bao 20.12-20.76 B ₂ 0 ₃ 16.54-18.40 2. The method of producing glass in the system V ^ 0 5 - B 2.0 s - ZnO - BaO by boiling it at 1100-1200 ° C in an oxygen-environment and production, about t and h a -. It is clear that in order to increase the dielectric constant, the glass melt is bubbled with oxygen, and the production is carried out by casting with centrifugation in an oxygen stream.