SU1108962A1 - Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure
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Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure
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SU3560158/25A1983-01-061983-01-06Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure
SU1108962A1
(en)