SU1108962A1 - Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure - Google Patents

Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure

Info

Publication number
SU1108962A1
SU1108962A1 SU3560158/25A SU3560158A SU1108962A1 SU 1108962 A1 SU1108962 A1 SU 1108962A1 SU 3560158/25 A SU3560158/25 A SU 3560158/25A SU 3560158 A SU3560158 A SU 3560158A SU 1108962 A1 SU1108962 A1 SU 1108962A1
Authority
SU
USSR - Soviet Union
Prior art keywords
defectiveness
decreasing
conductor
double
semiconductor structure
Prior art date
Application number
SU3560158/25A
Other languages
Russian (ru)
Inventor
В.М. Тюлькин
А.И. Мальцев
А.П. Нагин
В.А. Милошевский
Ю.Р. Чернышев
Original Assignee
В.М. Тюлькин
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by В.М. Тюлькин filed Critical В.М. Тюлькин
Priority to SU3560158/25A priority Critical patent/SU1108962A1/en
Application granted granted Critical
Publication of SU1108962A1 publication Critical patent/SU1108962A1/en

Links

SU3560158/25A 1983-01-06 1983-01-06 Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure SU1108962A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3560158/25A SU1108962A1 (en) 1983-01-06 1983-01-06 Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3560158/25A SU1108962A1 (en) 1983-01-06 1983-01-06 Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure

Publications (1)

Publication Number Publication Date
SU1108962A1 true SU1108962A1 (en) 1995-04-10

Family

ID=60518724

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3560158/25A SU1108962A1 (en) 1983-01-06 1983-01-06 Method of decreasing defectiveness of double-layer dielectric in conductor-silicon nitride-silicon oxide- semiconductor structure

Country Status (1)

Country Link
SU (1) SU1108962A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2454841C2 (en) * 2006-06-07 2012-06-27 Аб Микроэлектроник Гезелльшафт Мит Бешренктер Хафтунг Circuit substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2454841C2 (en) * 2006-06-07 2012-06-27 Аб Микроэлектроник Гезелльшафт Мит Бешренктер Хафтунг Circuit substrate

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