SU107653A1 - A new method of extruding single-crystal ingots - Google Patents

Description

A new method is proposed for pulling single-crystal ingots from crucibles of the same material, heated by bombardment by charged particles, accelerated and focused by electrostatic, magnetic or electromagnetic optics.

It has been found that if the material itself being pulled is simultaneously a crucible, oxidation processes and metal contamination during the drawing of monocrystals are excluded.

For the implementation of the method, an electron-ion heater is proposed, the operation and description of which is shown in FIG. 1 and 2.

The heater consists of. a vacuum chamber / in which a bar 2 is installed, consisting of a material of drawn ingots-single crystals. Bar 2 is placed on platform 3 and rotates around axis 00. In the vacuum chamber, one or more individual guns are emitted symmetrically to the axis of the OO, ejecting charged particles. With a separate mechanism, the seed is descended into the central

part of the molten metal surface, with the help of its ingot 4 being pulled. The seed rotates around the axis 00 and moves towards it. Through the slots of the cooled box J and 5a, high voltage power is supplied to the guns of the charged particles of the cathode 6. By means of the electrode 7, charged particles are sucked away, the movement of which is accelerated by the electrode 8.

E.; Stroke optical system: It focuses and simultaneously directs a beam of charged particles on the surface of the Brzska 2.

Due to the transformation of the kinetic energy of the charged particles into heat, a dissolvable zone 9 is formed in the bar. The dimensions and shape of the zone 9 control are: :) looking at the cooling rate.

The vacuum chamber is cooled with a water Pbaschka and, whether or not a gay: m 10 in which the water is circulated. JH nab: node for process I can from: .5otr (windows // and 2, vacuum; 1 | Pose through window / 3.

Those:, 1per; -: tury controlled photoe. E: trong Y | device :, 14, nrivedssgnyum (lb. 2. Reg U ipovane

and the control is carried out to an accuracy of ± 1%. The photoelectronic device, through an amplifying device 15, acts on a high-frequency power source 16. The power source is connected to electron guns. The intensity of the electron guns is stabilized by a separate device.

Electron-ion heating, as compared with the induction heating method, contributes to the realization of zone melting of the metal. At the same time, this method allows for the melting of pure metal, since it melts directly the material of the crucible itself. Therefore, it is used to produce ingots or single crystals of pure metal.

This method is used to obtain semiconducting materials, as well as to obtain

pure metals in ferrous and nonferrous metallurgy.

The advantage of using this method is that it allows to obtain single crystal ingots from crucibles of the same material, using non-crucible melting and electron-ion heating.

Item Image

A new method of pulling ingots - single crystals, characterized in that, in order to prevent oxidation and contamination of single crystals when they are drawn, it uses the crucible of the same material as the charge metal, and the metal is heated by bombarding the crucible metal with charged particles with acceleration of movement, which are focused using electrostatic, magnetic or electromagnetic optics.

No. 107653

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