SU1002133A1 - Method of grinding semicoductor material plates - Google Patents

Description

The invention relates to the production of semiconductor materials and devices, in particular, to the technology of manufacturing single-crystal silicon wafers.

A known method of treating the wafers, used in machines for grinding with a bonded abrasive. The grinding process is carried out by rotating the tool with a grinding layer made of bonded abrasive relative to the surface of the plates fixed to the grinding table and rotating the grinding table, and therefore moving the plates relative to the fixed axis of rotation of the grinding tool. In this case, the grinding process takes place after repeatedly moving the plate surface relative to the rotating tool. The tool feed during the grinding process is carried out under the action of a force, for example, the dead weight of the spindle with the tool, or forcibly by a special feed mechanism as the layer is ground from the surface of the plates. Grinding is carried out with the end surface of the grinding layer of the tool. ,

B machine tools used the following method of grinding plates; Laying the plates on the grinding table, imparting rotation to the grinding table and the tool, feeding the tool to the contact with the plate surface, applying pressure to the tool, grinding the plates, moving the tool away from the plate surface,

10 stop of the machine, eat plates, washing the surface of the table.

The disadvantage of this method is the cyclical operation of the equipment, which reduces the performance

15 and does not allow to automate the grinding process,. as well as the relatively not high quality of the machined surface of the plates.

20

Claims (1)

The most essential to the invention according to the technical essence is the method of grinding, which consists in feeding the tool at a predetermined distance of the end surface of the orifice layer of the tool from the plane of the grinding table, equal to the specified plate thickness, placing the plates on the grinding table, imparting rotation to the grinding tool and grinding head with plates, grinding, stopping the machine, removing plates C2 J. Grinding when using this method is performed by embedding into a certain, predetermined This is done in two stages: the specified thickness is cut off by the side surface of the sanding layer of the tool, and the end surface of the same sanding layer is polished, and the surface of the plate is cured. The use of this technical solution increases productivity and facilitates automation conditions, since the grinding process takes place in a single pass of the plates under the tool, however, the quality of the ground surface on the roughness of these machines does not meet the requirements of finishing polishing and has a processing class not higher than 8. The cause Quality is the high feed rate of the transverse remegenese of the plate surface from the wearable grinding tool. So, for example, when using recommended processing parameters, the feed per 1 cm of linear displacement of the periphery of the tool is at least 1.1 µm, or per turn, the grinding tool removes /% 100 µm of the shear layer thickness of 30 µm or more. As a result, Taje TaKoi o removal on the surface of the plate remains a significant roughness and, in addition, punctures in the thickness of the plate exceeding 15 microns are formed, which is a cause of the quality of the surface of the plate requiring additional polishing pastes or other processing met . The aim of the invention is to improve the quality of the surface of the plates. This goal is achieved by the fact that in a known method of grinding plates made of semiconductor material, which consists in fixing the plates on a grinding table, feeding a rotating tool to the head .1 processing bar, feeding coolant and telling the movement of the stalk from the plate to the tool at a given speed, the transverse movement of the table is carried out at a speed not exceeding 0.3 µm per 1 cm of linear movement of the periphery of the tool. The advantage of the proposed method is to reduce the cut layer by one turn of the tool with the same thickness. So, for example, for a tool with a diameter of 8 cm, the layer to be cut is only 7.5 microns per revolution. With this and a smaller feed, the dimensions between the scratches are reduced, which apply the associated abrasive grains of the tool, the force of the slip of the allowance is reduced, and consequently the chips in the plate thickness are reduced to 1-2 microns. By improving the quality during grinding, the polishing of diamond polishing paste is reduced, and consequently, the consumption of raw materials for the manufacture of polished plates is reduced. The invention of the method of grinding plates of semiconductor material, which consists in fixing the plates on the grinding table, feeding a rotating tool to the depth of processing, supplying coolant and communicating the movement of CTO $ iy with the plates relative to the tool with a given speed, characterized in that plate surfaces, the speed of movement of the table is chosen to be no more than 0.3 µm per 1 cm of linear movement of the tool periphery. Information sources taken into account during the examination 1. Machine model МSH259. Operation manual, M., MSZ, 1972. J2.BaKcep D.B. et al. Processing of technical ceramics. M., 1976, p. 84