SG96253A1 - Triple-layered low dielectric constant dielectric dual damascene approach - Google Patents

Triple-layered low dielectric constant dielectric dual damascene approach

Info

Publication number
SG96253A1
SG96253A1 SG200106791A SG200106791A SG96253A1 SG 96253 A1 SG96253 A1 SG 96253A1 SG 200106791 A SG200106791 A SG 200106791A SG 200106791 A SG200106791 A SG 200106791A SG 96253 A1 SG96253 A1 SG 96253A1
Authority
SG
Singapore
Prior art keywords
triple
dual damascene
dielectric constant
layered low
damascene approach
Prior art date
Application number
SG200106791A
Inventor
Ting Cheong Ang
Shyue Fong Quek
Yee Chong Wong
Sang Yee Leong
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/726,657 external-priority patent/US6406994B1/en
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG96253A1 publication Critical patent/SG96253A1/en

Links

SG200106791A 2000-11-30 2001-11-05 Triple-layered low dielectric constant dielectric dual damascene approach SG96253A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/726,657 US6406994B1 (en) 1999-12-03 2000-11-30 Triple-layered low dielectric constant dielectric dual damascene approach

Publications (1)

Publication Number Publication Date
SG96253A1 true SG96253A1 (en) 2003-05-23

Family

ID=29712607

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200106791A SG96253A1 (en) 2000-11-30 2001-11-05 Triple-layered low dielectric constant dielectric dual damascene approach

Country Status (1)

Country Link
SG (1) SG96253A1 (en)

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