SG81342A1 - Radiation sensitive resin composition - Google Patents
Radiation sensitive resin compositionInfo
- Publication number
- SG81342A1 SG81342A1 SG9906524A SG1999006524A SG81342A1 SG 81342 A1 SG81342 A1 SG 81342A1 SG 9906524 A SG9906524 A SG 9906524A SG 1999006524 A SG1999006524 A SG 1999006524A SG 81342 A1 SG81342 A1 SG 81342A1
- Authority
- SG
- Singapore
- Prior art keywords
- resin composition
- sensitive resin
- radiation sensitive
- radiation
- composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/46—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with hetero atoms directly attached to the ring nitrogen atom
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36490598 | 1998-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG81342A1 true SG81342A1 (en) | 2001-06-19 |
Family
ID=18482954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9906524A SG81342A1 (en) | 1998-12-22 | 1999-12-22 | Radiation sensitive resin composition |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100596125B1 (en) |
SG (1) | SG81342A1 (en) |
TW (1) | TWI224240B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537724B1 (en) * | 1999-11-02 | 2003-03-25 | Hyundai Electronics Industries Co., Ltd. | Photoresist composition for resist flow process, and process for forming contact hole using the same |
KR101416038B1 (en) * | 2007-12-26 | 2014-08-06 | 주식회사 동진쎄미켐 | Salt for controlling acid-diffusion and photoresist composition including the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0608983A1 (en) * | 1993-01-25 | 1994-08-03 | AT&T Corp. | A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
US5389491A (en) * | 1992-07-15 | 1995-02-14 | Matsushita Electric Industrial Co., Ltd. | Negative working resist composition |
US5738972A (en) * | 1994-11-02 | 1998-04-14 | Hoechst Japan Limited | Radiation sensitive composition |
US5753412A (en) * | 1995-02-17 | 1998-05-19 | International Business Machines Corporation | Photoresist having increased sensitivity and use thereof |
US5780206A (en) * | 1994-03-28 | 1998-07-14 | Wako Pure Chemical Industries, Ltd. | Fine pattern forming process using a resist composition sensitive to deep ultraviolet light |
-
1999
- 1999-12-21 KR KR1019990059559A patent/KR100596125B1/en active IP Right Grant
- 1999-12-22 TW TW088122674A patent/TWI224240B/en not_active IP Right Cessation
- 1999-12-22 SG SG9906524A patent/SG81342A1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5389491A (en) * | 1992-07-15 | 1995-02-14 | Matsushita Electric Industrial Co., Ltd. | Negative working resist composition |
EP0608983A1 (en) * | 1993-01-25 | 1994-08-03 | AT&T Corp. | A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
US5780206A (en) * | 1994-03-28 | 1998-07-14 | Wako Pure Chemical Industries, Ltd. | Fine pattern forming process using a resist composition sensitive to deep ultraviolet light |
US5738972A (en) * | 1994-11-02 | 1998-04-14 | Hoechst Japan Limited | Radiation sensitive composition |
US5753412A (en) * | 1995-02-17 | 1998-05-19 | International Business Machines Corporation | Photoresist having increased sensitivity and use thereof |
US5770345A (en) * | 1995-02-17 | 1998-06-23 | International Business Machines Corporation | Photoresist having increased sensitivity and use thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI224240B (en) | 2004-11-21 |
KR100596125B1 (en) | 2006-07-05 |
KR20000048272A (en) | 2000-07-25 |
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