SG81342A1 - Radiation sensitive resin composition - Google Patents

Radiation sensitive resin composition

Info

Publication number
SG81342A1
SG81342A1 SG9906524A SG1999006524A SG81342A1 SG 81342 A1 SG81342 A1 SG 81342A1 SG 9906524 A SG9906524 A SG 9906524A SG 1999006524 A SG1999006524 A SG 1999006524A SG 81342 A1 SG81342 A1 SG 81342A1
Authority
SG
Singapore
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Application number
SG9906524A
Inventor
Kobayashi Eiichi
Yokoyama Ken-Ichi
Nishimura Yukio
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of SG81342A1 publication Critical patent/SG81342A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D207/00Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/46Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with hetero atoms directly attached to the ring nitrogen atom
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • C08F212/24Phenols or alcohols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
SG9906524A 1998-12-22 1999-12-22 Radiation sensitive resin composition SG81342A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36490598 1998-12-22

Publications (1)

Publication Number Publication Date
SG81342A1 true SG81342A1 (en) 2001-06-19

Family

ID=18482954

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9906524A SG81342A1 (en) 1998-12-22 1999-12-22 Radiation sensitive resin composition

Country Status (3)

Country Link
KR (1) KR100596125B1 (en)
SG (1) SG81342A1 (en)
TW (1) TWI224240B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537724B1 (en) * 1999-11-02 2003-03-25 Hyundai Electronics Industries Co., Ltd. Photoresist composition for resist flow process, and process for forming contact hole using the same
KR101416038B1 (en) * 2007-12-26 2014-08-06 주식회사 동진쎄미켐 Salt for controlling acid-diffusion and photoresist composition including the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608983A1 (en) * 1993-01-25 1994-08-03 AT&T Corp. A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers
US5389491A (en) * 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
US5738972A (en) * 1994-11-02 1998-04-14 Hoechst Japan Limited Radiation sensitive composition
US5753412A (en) * 1995-02-17 1998-05-19 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
US5780206A (en) * 1994-03-28 1998-07-14 Wako Pure Chemical Industries, Ltd. Fine pattern forming process using a resist composition sensitive to deep ultraviolet light

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389491A (en) * 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
EP0608983A1 (en) * 1993-01-25 1994-08-03 AT&T Corp. A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers
US5780206A (en) * 1994-03-28 1998-07-14 Wako Pure Chemical Industries, Ltd. Fine pattern forming process using a resist composition sensitive to deep ultraviolet light
US5738972A (en) * 1994-11-02 1998-04-14 Hoechst Japan Limited Radiation sensitive composition
US5753412A (en) * 1995-02-17 1998-05-19 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
US5770345A (en) * 1995-02-17 1998-06-23 International Business Machines Corporation Photoresist having increased sensitivity and use thereof

Also Published As

Publication number Publication date
TWI224240B (en) 2004-11-21
KR100596125B1 (en) 2006-07-05
KR20000048272A (en) 2000-07-25

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