SG52688G - Alloy metallization - Google Patents
Alloy metallizationInfo
- Publication number
- SG52688G SG52688G SG52688A SG52688A SG52688G SG 52688 G SG52688 G SG 52688G SG 52688 A SG52688 A SG 52688A SG 52688 A SG52688 A SG 52688A SG 52688 G SG52688 G SG 52688G
- Authority
- SG
- Singapore
- Prior art keywords
- alloy metallization
- metallization
- alloy
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08229877A GB2128636B (en) | 1982-10-19 | 1982-10-19 | Silicon-aluminium alloy metallization of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG52688G true SG52688G (en) | 1989-01-27 |
Family
ID=10533701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG52688A SG52688G (en) | 1982-10-19 | 1988-08-04 | Alloy metallization |
Country Status (3)
Country | Link |
---|---|
GB (1) | GB2128636B (en) |
HK (1) | HK789A (en) |
SG (1) | SG52688G (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3426201A1 (en) * | 1984-07-17 | 1986-01-23 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | PROCESS FOR APPLYING PROTECTIVE LAYERS |
JPS6197823A (en) * | 1984-10-18 | 1986-05-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62111421A (en) * | 1985-11-09 | 1987-05-22 | Mitsubishi Electric Corp | Proportional control method for metal silicide film composition |
US5108951A (en) * | 1990-11-05 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Method for forming a metal contact |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
EP0430403B1 (en) | 1989-11-30 | 1998-01-07 | STMicroelectronics, Inc. | Method for fabricating interlevel contacts |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US6242811B1 (en) | 1989-11-30 | 2001-06-05 | Stmicroelectronics, Inc. | Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature |
US6271137B1 (en) | 1989-11-30 | 2001-08-07 | Stmicroelectronics, Inc. | Method of producing an aluminum stacked contact/via for multilayer |
US6287963B1 (en) | 1990-11-05 | 2001-09-11 | Stmicroelectronics, Inc. | Method for forming a metal contact |
KR920010620A (en) * | 1990-11-30 | 1992-06-26 | 원본미기재 | How to Form Aluminum Stacked Contacts / Pathways for Multi-layer Interconnect Lines |
DE69319993T2 (en) * | 1992-09-22 | 1998-12-10 | Sgs-Thomson Microelectronics, Inc., Carrollton, Tex. | Method of making a metal contact |
DE4424420A1 (en) * | 1994-07-12 | 1996-01-18 | Telefunken Microelectron | Contacting process |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
FR1474973A (en) * | 1966-02-16 | 1967-03-31 | Radiotechnique Coprim Rtc | Method of manufacturing a contact layer for semiconductor devices and products obtained |
US3574680A (en) * | 1968-05-07 | 1971-04-13 | Ibm | High-low ohmic contact deposition method |
US3934059A (en) * | 1974-02-04 | 1976-01-20 | Rca Corporation | Method of vapor deposition |
GB2038883B (en) * | 1978-11-09 | 1982-12-08 | Standard Telephones Cables Ltd | Metallizing semiconductor devices |
-
1982
- 1982-10-19 GB GB08229877A patent/GB2128636B/en not_active Expired
-
1988
- 1988-08-04 SG SG52688A patent/SG52688G/en unknown
-
1989
- 1989-01-05 HK HK789A patent/HK789A/en unknown
Also Published As
Publication number | Publication date |
---|---|
HK789A (en) | 1989-01-13 |
GB2128636B (en) | 1986-01-08 |
GB2128636A (en) | 1984-05-02 |
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