SG52688G - Alloy metallization - Google Patents

Alloy metallization

Info

Publication number
SG52688G
SG52688G SG52688A SG52688A SG52688G SG 52688 G SG52688 G SG 52688G SG 52688 A SG52688 A SG 52688A SG 52688 A SG52688 A SG 52688A SG 52688 G SG52688 G SG 52688G
Authority
SG
Singapore
Prior art keywords
alloy metallization
metallization
alloy
Prior art date
Application number
SG52688A
Original Assignee
Motorola Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Ltd filed Critical Motorola Ltd
Publication of SG52688G publication Critical patent/SG52688G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG52688A 1982-10-19 1988-08-04 Alloy metallization SG52688G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08229877A GB2128636B (en) 1982-10-19 1982-10-19 Silicon-aluminium alloy metallization of semiconductor substrate

Publications (1)

Publication Number Publication Date
SG52688G true SG52688G (en) 1989-01-27

Family

ID=10533701

Family Applications (1)

Application Number Title Priority Date Filing Date
SG52688A SG52688G (en) 1982-10-19 1988-08-04 Alloy metallization

Country Status (3)

Country Link
GB (1) GB2128636B (en)
HK (1) HK789A (en)
SG (1) SG52688G (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426201A1 (en) * 1984-07-17 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau PROCESS FOR APPLYING PROTECTIVE LAYERS
JPS6197823A (en) * 1984-10-18 1986-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS62111421A (en) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp Proportional control method for metal silicide film composition
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
EP0430403B1 (en) 1989-11-30 1998-01-07 STMicroelectronics, Inc. Method for fabricating interlevel contacts
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
KR920010620A (en) * 1990-11-30 1992-06-26 원본미기재 How to Form Aluminum Stacked Contacts / Pathways for Multi-layer Interconnect Lines
DE69319993T2 (en) * 1992-09-22 1998-12-10 Sgs Thomson Microelectronics Method of making a metal contact
DE4424420A1 (en) * 1994-07-12 1996-01-18 Telefunken Microelectron Contacting process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
FR1474973A (en) * 1966-02-16 1967-03-31 Radiotechnique Coprim Rtc Method of manufacturing a contact layer for semiconductor devices and products obtained
US3574680A (en) * 1968-05-07 1971-04-13 Ibm High-low ohmic contact deposition method
US3934059A (en) * 1974-02-04 1976-01-20 Rca Corporation Method of vapor deposition
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices

Also Published As

Publication number Publication date
GB2128636B (en) 1986-01-08
HK789A (en) 1989-01-13
GB2128636A (en) 1984-05-02

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