SG49782A1 - Temperature sensor circuit and constant-current circuit - Google Patents
Temperature sensor circuit and constant-current circuitInfo
- Publication number
- SG49782A1 SG49782A1 SG1996005710A SG1996005710A SG49782A1 SG 49782 A1 SG49782 A1 SG 49782A1 SG 1996005710 A SG1996005710 A SG 1996005710A SG 1996005710 A SG1996005710 A SG 1996005710A SG 49782 A1 SG49782 A1 SG 49782A1
- Authority
- SG
- Singapore
- Prior art keywords
- circuit
- constant
- temperature sensor
- current
- current circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3224897A JP2666620B2 (en) | 1991-08-09 | 1991-08-09 | Temperature sensor circuit |
JP4024558A JP2800523B2 (en) | 1992-01-14 | 1992-01-14 | Constant current circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG49782A1 true SG49782A1 (en) | 1998-06-15 |
Family
ID=26362101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996005710A SG49782A1 (en) | 1991-08-09 | 1992-04-24 | Temperature sensor circuit and constant-current circuit |
Country Status (6)
Country | Link |
---|---|
US (2) | US5357149A (en) |
EP (1) | EP0531615A2 (en) |
KR (1) | KR950005018B1 (en) |
AU (2) | AU647261B2 (en) |
CA (1) | CA2066929C (en) |
SG (1) | SG49782A1 (en) |
Families Citing this family (79)
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GB9302214D0 (en) * | 1993-02-04 | 1993-03-24 | Texas Instruments Ltd | Differential bus drivers |
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JPH07229932A (en) * | 1994-02-17 | 1995-08-29 | Toshiba Corp | Electric potential sensing circuit |
FR2721119B1 (en) * | 1994-06-13 | 1996-07-19 | Sgs Thomson Microelectronics | Temperature stable current source. |
JP2555990B2 (en) * | 1994-08-03 | 1996-11-20 | 日本電気株式会社 | Multiplier |
US5581211A (en) * | 1994-08-12 | 1996-12-03 | Nec Corporation | Squaring circuit capable of widening a range of an input voltage |
JP3374541B2 (en) * | 1994-08-22 | 2003-02-04 | 富士電機株式会社 | Method for adjusting temperature dependence of constant current circuit |
US5625305A (en) * | 1994-10-20 | 1997-04-29 | Acer Incorporated | Load detection apparatus |
US5640122A (en) * | 1994-12-16 | 1997-06-17 | Sgs-Thomson Microelectronics, Inc. | Circuit for providing a bias voltage compensated for p-channel transistor variations |
FR2732129B1 (en) * | 1995-03-22 | 1997-06-20 | Suisse Electronique Microtech | REFERENCE CURRENT GENERATOR IN CMOS TECHNOLOGY |
JP3039611B2 (en) * | 1995-05-26 | 2000-05-08 | 日本電気株式会社 | Current mirror circuit |
JPH08330861A (en) * | 1995-05-31 | 1996-12-13 | Nec Corp | Low-voltage operational transconductance amplifier |
JP2778537B2 (en) * | 1995-07-14 | 1998-07-23 | 日本電気株式会社 | AGC amplifier |
US5815039A (en) * | 1995-07-21 | 1998-09-29 | Nec Corporation | Low-voltage bipolar OTA having a linearity in transconductance over a wide input voltage range |
US5668750A (en) * | 1995-07-28 | 1997-09-16 | Nec Corporation | Bipolar multiplier with wide input voltage range using multitail cell |
US5926408A (en) * | 1995-07-28 | 1999-07-20 | Nec Corporation | Bipolar multiplier with wide input voltage range using multitail cell |
US5933054A (en) * | 1995-09-19 | 1999-08-03 | Nec Corporation | Bipolar operational transconductance amplifier |
JP3384207B2 (en) * | 1995-09-22 | 2003-03-10 | 株式会社デンソー | Differential amplifier circuit |
JP2874616B2 (en) * | 1995-10-13 | 1999-03-24 | 日本電気株式会社 | OTA and multiplier |
JPH09119870A (en) * | 1995-10-26 | 1997-05-06 | Nec Corp | Temperature detection method, semiconductor device and temperature detection circuit |
JP2836547B2 (en) * | 1995-10-31 | 1998-12-14 | 日本電気株式会社 | Reference current circuit |
JP3348576B2 (en) * | 1995-11-10 | 2002-11-20 | ソニー株式会社 | Temperature detecting device, semiconductor element mounting the same, and autofocus system using the same |
JPH09219630A (en) * | 1995-12-08 | 1997-08-19 | Nec Corp | Differential circuit |
FR2744263B3 (en) * | 1996-01-31 | 1998-03-27 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT CURRENT REFERENCE DEVICE |
TW307060B (en) * | 1996-02-15 | 1997-06-01 | Advanced Micro Devices Inc | CMOS current mirror |
KR19990008200A (en) * | 1996-02-28 | 1999-01-25 | 요트.게.아. 롤페즈 | Reference voltage source with temperature compensation |
AU730555B2 (en) * | 1996-04-12 | 2001-03-08 | Nec Corporation | Bipolar translinear four-quadrant analog multiplier |
US5729156A (en) * | 1996-06-18 | 1998-03-17 | Micron Technology | ECL to CMOS level translator using delayed feedback for high speed BiCMOS applications |
JP2830847B2 (en) * | 1996-06-21 | 1998-12-02 | 日本電気株式会社 | Semiconductor integrated circuit |
JP3349047B2 (en) * | 1996-08-30 | 2002-11-20 | 東芝マイクロエレクトロニクス株式会社 | Constant voltage circuit |
WO1998011660A1 (en) * | 1996-09-11 | 1998-03-19 | Macronix International Co., Ltd. | Low voltage supply circuit |
US5877616A (en) * | 1996-09-11 | 1999-03-02 | Macronix International Co., Ltd. | Low voltage supply circuit for integrated circuit |
US5838191A (en) * | 1997-02-21 | 1998-11-17 | National Semiconductor Corporation | Bias circuit for switched capacitor applications |
US5873053A (en) * | 1997-04-08 | 1999-02-16 | International Business Machines Corporation | On-chip thermometry for control of chip operating temperature |
JP3255874B2 (en) * | 1997-04-21 | 2002-02-12 | 富士通株式会社 | Constant current circuit |
US5977813A (en) * | 1997-10-03 | 1999-11-02 | International Business Machines Corporation | Temperature monitor/compensation circuit for integrated circuits |
EP0927920A1 (en) * | 1998-01-05 | 1999-07-07 | Texas Instruments Incorporated | Voltage sag limiting system and method of operation |
JPH11231954A (en) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | Internal power supply voltage generation circuit |
US6150871A (en) * | 1999-05-21 | 2000-11-21 | Micrel Incorporated | Low power voltage reference with improved line regulation |
DE19956122A1 (en) * | 1999-11-13 | 2001-05-17 | Inst Halbleiterphysik Gmbh | Circuit for temperature stable bias and reference current source has two opposed current mirrors, p-MOS transistor in one path and output current mirrored out via further n-MOS transistor |
WO2002008708A1 (en) * | 2000-07-26 | 2002-01-31 | Stmicroelectronics Asia Pacifc Pte Ltd | A thermal sensor circuit |
DE10066032B4 (en) | 2000-07-28 | 2010-01-28 | Infineon Technologies Ag | Circuit arrangement for controlling the gain of an amplifier circuit |
US6433622B1 (en) * | 2000-08-17 | 2002-08-13 | Koninklijke Philips Electronics N.V. | Voltage stabilized low level driver |
JP2002270768A (en) * | 2001-03-08 | 2002-09-20 | Nec Corp | Cmos reference voltage circuit |
DE10144726B4 (en) * | 2001-09-11 | 2006-10-05 | T-Mobile Deutschland Gmbh | Method for the provision and allocation of telephone numbers in a telecommunications network |
FR2845767B1 (en) * | 2002-10-09 | 2005-12-09 | St Microelectronics Sa | INTEGRATED DIGITAL TEMPERATURE SENSOR |
US7015744B1 (en) * | 2004-01-05 | 2006-03-21 | National Semiconductor Corporation | Self-regulating low current watchdog current source |
CN102854229A (en) * | 2004-04-02 | 2013-01-02 | 硅实验室公司 | Integrated electronic sensor |
US8357958B2 (en) * | 2004-04-02 | 2013-01-22 | Silicon Laboratories Inc. | Integrated CMOS porous sensor |
JP2006133869A (en) * | 2004-11-02 | 2006-05-25 | Nec Electronics Corp | Cmos current mirror circuit and reference current/voltage circuit |
KR100605581B1 (en) * | 2004-12-28 | 2006-07-31 | 주식회사 하이닉스반도체 | Digital temperature sensing device using temperature character of contact resistance |
US7259614B1 (en) * | 2005-03-30 | 2007-08-21 | Integrated Device Technology, Inc. | Voltage sensing circuit |
DE102006040832B4 (en) * | 2005-09-30 | 2010-04-08 | Texas Instruments Deutschland Gmbh | Low power CMOS oscillator for low frequency clock generation |
US7265625B2 (en) * | 2005-10-04 | 2007-09-04 | Analog Devices, Inc. | Amplifier systems with low-noise, constant-transconductance bias generators |
US7629832B2 (en) * | 2006-04-28 | 2009-12-08 | Advanced Analog Silicon IP Corporation | Current source circuit and design methodology |
US7688051B1 (en) * | 2006-08-11 | 2010-03-30 | Marvell International Ltd. | Linear regulator with improved power supply rejection |
JP4271708B2 (en) * | 2007-02-01 | 2009-06-03 | シャープ株式会社 | Power amplifier and multistage amplifier circuit including the same |
JP2009145070A (en) * | 2007-12-11 | 2009-07-02 | Nec Electronics Corp | Temperature sensor circuit |
US8082796B1 (en) | 2008-01-28 | 2011-12-27 | Silicon Microstructures, Inc. | Temperature extraction from a pressure sensor |
JP2010021435A (en) * | 2008-07-11 | 2010-01-28 | Panasonic Corp | Mos transistor resistor, filter, and integrated circuit |
US8004350B2 (en) * | 2009-06-03 | 2011-08-23 | Infineon Technologies Ag | Impedance transformation with transistor circuits |
US8760144B2 (en) * | 2010-06-28 | 2014-06-24 | Wuxi Vimicro Corporation | Multiple-input comparator and power converter |
KR20120115863A (en) * | 2011-04-11 | 2012-10-19 | 에스케이하이닉스 주식회사 | Temperature sensor |
KR101276947B1 (en) * | 2011-06-27 | 2013-06-19 | 엘에스산전 주식회사 | A Temperature Sensor with Low Power, High Precision, and Wide Temperature Range |
US8852513B1 (en) | 2011-09-30 | 2014-10-07 | Silicon Laboratories Inc. | Systems and methods for packaging integrated circuit gas sensor systems |
US8691609B1 (en) | 2011-09-30 | 2014-04-08 | Silicon Laboratories Inc. | Gas sensor materials and methods for preparation thereof |
US8669131B1 (en) | 2011-09-30 | 2014-03-11 | Silicon Laboratories Inc. | Methods and materials for forming gas sensor structures |
US9164052B1 (en) | 2011-09-30 | 2015-10-20 | Silicon Laboratories Inc. | Integrated gas sensor |
US9274536B2 (en) * | 2012-03-16 | 2016-03-01 | Intel Corporation | Low-impedance reference voltage generator |
US9547324B2 (en) * | 2014-04-03 | 2017-01-17 | Qualcomm Incorporated | Power-efficient, low-noise, and process/voltage/temperature (PVT)—insensitive regulator for a voltage-controlled oscillator (VCO) |
JP2016121907A (en) | 2014-12-24 | 2016-07-07 | 株式会社ソシオネクスト | Temperature sensor circuit and integrated circuit |
KR102083098B1 (en) | 2018-11-28 | 2020-02-28 | 배만수 | Handtruck for carrying of gasbombe |
US11353903B1 (en) * | 2021-03-31 | 2022-06-07 | Silicon Laboratories Inc. | Voltage reference circuit |
Family Cites Families (23)
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JPS4818671B1 (en) * | 1969-06-06 | 1973-06-07 | ||
US3651346A (en) * | 1970-09-24 | 1972-03-21 | Rca Corp | Electrical circuit providing multiple v bias voltages |
CH532778A (en) * | 1971-06-21 | 1973-01-15 | Centre Electron Horloger | Temperature sensor device |
US3851241A (en) * | 1973-08-27 | 1974-11-26 | Rca Corp | Temperature dependent voltage reference circuit |
US3873857A (en) * | 1974-01-10 | 1975-03-25 | Sandoz Ag | Temperature sensor |
US4021722A (en) * | 1974-11-04 | 1977-05-03 | Rca Corporation | Temperature-sensitive current divider |
US3925718A (en) * | 1974-11-26 | 1975-12-09 | Rca Corp | Current mirror and degenerative amplifier |
US4204133A (en) * | 1977-10-14 | 1980-05-20 | Rca Corporation | Temperature-sensitive control circuits |
US4224537A (en) * | 1978-11-16 | 1980-09-23 | Motorola, Inc. | Modified semiconductor temperature sensor |
JPS562017A (en) * | 1979-06-19 | 1981-01-10 | Toshiba Corp | Constant electric current circuit |
US4282477A (en) * | 1980-02-11 | 1981-08-04 | Rca Corporation | Series voltage regulators for developing temperature-compensated voltages |
JPS58101310A (en) * | 1981-12-11 | 1983-06-16 | Toshiba Corp | Current controlling circuit |
US4461991A (en) * | 1983-02-28 | 1984-07-24 | Motorola, Inc. | Current source circuit having reduced error |
JPH069326B2 (en) * | 1983-05-26 | 1994-02-02 | ソニー株式会社 | Current mirror circuit |
GB8428138D0 (en) * | 1984-11-07 | 1984-12-12 | Sibbald A | Semiconductor devices |
US4588941A (en) * | 1985-02-11 | 1986-05-13 | At&T Bell Laboratories | Cascode CMOS bandgap reference |
US4714901A (en) * | 1985-10-15 | 1987-12-22 | Gould Inc. | Temperature compensated complementary metal-insulator-semiconductor oscillator |
JP2666843B2 (en) * | 1987-09-17 | 1997-10-22 | 日本電気株式会社 | Differential amplifier circuit |
US4994688A (en) * | 1988-05-25 | 1991-02-19 | Hitachi Ltd. | Semiconductor device having a reference voltage generating circuit |
JP2598154B2 (en) * | 1990-05-24 | 1997-04-09 | 株式会社東芝 | Temperature detection circuit |
US5157285A (en) * | 1991-08-30 | 1992-10-20 | Allen Michael J | Low noise, temperature-compensated, and process-compensated current and voltage control circuits |
US5373226A (en) * | 1991-11-15 | 1994-12-13 | Nec Corporation | Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor |
US5200654A (en) * | 1991-11-20 | 1993-04-06 | National Semiconductor Corporation | Trim correction circuit with temperature coefficient compensation |
-
1992
- 1992-04-23 CA CA002066929A patent/CA2066929C/en not_active Expired - Fee Related
- 1992-04-24 SG SG1996005710A patent/SG49782A1/en unknown
- 1992-04-24 EP EP92107075A patent/EP0531615A2/en not_active Withdrawn
- 1992-04-24 US US07/873,228 patent/US5357149A/en not_active Expired - Fee Related
- 1992-04-24 AU AU15128/92A patent/AU647261B2/en not_active Ceased
- 1992-04-24 KR KR1019920006946A patent/KR950005018B1/en not_active IP Right Cessation
-
1994
- 1994-01-12 AU AU53167/94A patent/AU657441B2/en not_active Ceased
- 1994-02-18 US US08/198,581 patent/US5512855A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU657441B2 (en) | 1995-03-09 |
AU1512892A (en) | 1993-02-11 |
KR930005363A (en) | 1993-03-23 |
EP0531615A3 (en) | 1994-03-09 |
EP0531615A2 (en) | 1993-03-17 |
CA2066929A1 (en) | 1993-02-10 |
US5357149A (en) | 1994-10-18 |
CA2066929C (en) | 1996-10-01 |
AU5316794A (en) | 1994-03-24 |
AU647261B2 (en) | 1994-03-17 |
KR950005018B1 (en) | 1995-05-17 |
US5512855A (en) | 1996-04-30 |
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