SG30643G - Thermistor made of diamond - Google Patents
Thermistor made of diamondInfo
- Publication number
- SG30643G SG30643G SG1995907085A SG1995907085A SG30643G SG 30643 G SG30643 G SG 30643G SG 1995907085 A SG1995907085 A SG 1995907085A SG 1995907085 A SG1995907085 A SG 1995907085A SG 30643 G SG30643 G SG 30643G
- Authority
- SG
- Singapore
- Prior art keywords
- diamond
- thermistor made
- thermistor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9382589A JP2773219B2 (ja) | 1989-04-12 | 1989-04-12 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG30643G true SG30643G (en) | 1995-09-01 |
Family
ID=14093174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1995907085A SG30643G (en) | 1989-04-12 | 1990-04-10 | Thermistor made of diamond |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0392461B1 (de) |
JP (1) | JP2773219B2 (de) |
DE (1) | DE69011384T2 (de) |
HK (1) | HK79295A (de) |
SG (1) | SG30643G (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299705A (ja) * | 1992-04-16 | 1993-11-12 | Kobe Steel Ltd | ダイヤモンド薄膜電子デバイス及びその製造方法 |
EP0582397A3 (de) * | 1992-08-05 | 1995-01-25 | Crystallume | CVD-Diamant-Material für einen Strahlungsdetektor und Herstellungsverfahren. |
US5388027A (en) * | 1993-07-29 | 1995-02-07 | Motorola, Inc. | Electronic circuit assembly with improved heatsinking |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3435399A (en) * | 1966-04-19 | 1969-03-25 | Gen Electric | Thermistor device and method of producing said device |
JPS58141572A (ja) * | 1982-02-18 | 1983-08-22 | Seiko Epson Corp | 半導体装置 |
JPS59213126A (ja) * | 1983-05-19 | 1984-12-03 | Sumitomo Electric Ind Ltd | ダイヤモンド半導体素子の製造法 |
JPS6373559A (ja) * | 1986-09-16 | 1988-04-04 | Seiko Epson Corp | 固体撮像装置 |
-
1989
- 1989-04-12 JP JP9382589A patent/JP2773219B2/ja not_active Expired - Fee Related
-
1990
- 1990-04-10 DE DE1990611384 patent/DE69011384T2/de not_active Expired - Fee Related
- 1990-04-10 EP EP19900106850 patent/EP0392461B1/de not_active Expired - Lifetime
- 1990-04-10 SG SG1995907085A patent/SG30643G/en unknown
-
1995
- 1995-05-18 HK HK79295A patent/HK79295A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2773219B2 (ja) | 1998-07-09 |
DE69011384D1 (de) | 1994-09-15 |
DE69011384T2 (de) | 1994-12-15 |
HK79295A (en) | 1995-05-26 |
EP0392461B1 (de) | 1994-08-10 |
EP0392461A2 (de) | 1990-10-17 |
JPH02271528A (ja) | 1990-11-06 |
EP0392461A3 (en) | 1990-10-31 |
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