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Priority claimed from US12/535,464external-prioritypatent/US8119527B1/en
Priority claimed from US12/833,823external-prioritypatent/US9034768B2/en
Application filed by Novellus Systems IncfiledCriticalNovellus Systems Inc
Publication of SG168490A1publicationCriticalpatent/SG168490A1/en
Methods and apparatuses for filling high aspect ratio features with tungsten- containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 2500C and/or less than about 5 Torr.
SG201005237-1A2009-08-042010-07-16Depositing tungsten into high aspect ratio features
SG168490A1
(en)
Microelectronic processing component having corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer