SG127753A1 - Ferroelectric memory device, and readout method for such a device - Google Patents
Ferroelectric memory device, and readout method for such a deviceInfo
- Publication number
- SG127753A1 SG127753A1 SG200503086A SG200503086A SG127753A1 SG 127753 A1 SG127753 A1 SG 127753A1 SG 200503086 A SG200503086 A SG 200503086A SG 200503086 A SG200503086 A SG 200503086A SG 127753 A1 SG127753 A1 SG 127753A1
- Authority
- SG
- Singapore
- Prior art keywords
- ferroelectric capacitor
- ferroelectric memory
- memory device
- readout method
- ferroelectric
- Prior art date
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
A ferroelectric memory device includes a plurality of memory cells, which each include a ferroelectric capacitor 1, 2, 3 arranged in proximity to a heating device, having a heater layer 4 and two electrodes 5, 6. When the data stored in the ferroelectric capacitor is to be retrieved, the heating device heats the ferroelectric capacitor. This, due to the pyroelectric effect, causes the ferroelectric capacitor to generate a voltage which is indicative of the polarization state of the ferroelectric capacitor, so measurement of the polarity of this voltage permits the stored data to be determined.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200503086A SG127753A1 (en) | 2005-05-09 | 2005-05-09 | Ferroelectric memory device, and readout method for such a device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200503086A SG127753A1 (en) | 2005-05-09 | 2005-05-09 | Ferroelectric memory device, and readout method for such a device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG127753A1 true SG127753A1 (en) | 2006-12-29 |
Family
ID=38461733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200503086A SG127753A1 (en) | 2005-05-09 | 2005-05-09 | Ferroelectric memory device, and readout method for such a device |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG127753A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0589661A (en) * | 1991-02-15 | 1993-04-09 | Olympus Optical Co Ltd | Ferroelectric memory |
US5953245A (en) * | 1996-11-21 | 1999-09-14 | Rohm Co., Ltd. | Semiconductor memory device and method of controlling imprint condition thereof |
US20030202391A1 (en) * | 2002-03-19 | 2003-10-30 | Akitoshi Nishimura | Dummy cell structure for 1T1C FeRAM cell array |
EP1403876A1 (en) * | 2002-09-30 | 2004-03-31 | Texas Instruments Incorporated | Ferroelectric memory with wide operating voltage and multi-bit storage per cell |
-
2005
- 2005-05-09 SG SG200503086A patent/SG127753A1/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0589661A (en) * | 1991-02-15 | 1993-04-09 | Olympus Optical Co Ltd | Ferroelectric memory |
US5953245A (en) * | 1996-11-21 | 1999-09-14 | Rohm Co., Ltd. | Semiconductor memory device and method of controlling imprint condition thereof |
US20030202391A1 (en) * | 2002-03-19 | 2003-10-30 | Akitoshi Nishimura | Dummy cell structure for 1T1C FeRAM cell array |
EP1403876A1 (en) * | 2002-09-30 | 2004-03-31 | Texas Instruments Incorporated | Ferroelectric memory with wide operating voltage and multi-bit storage per cell |
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