SG127753A1 - Ferroelectric memory device, and readout method for such a device - Google Patents

Ferroelectric memory device, and readout method for such a device

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Publication number
SG127753A1
SG127753A1 SG200503086A SG200503086A SG127753A1 SG 127753 A1 SG127753 A1 SG 127753A1 SG 200503086 A SG200503086 A SG 200503086A SG 200503086 A SG200503086 A SG 200503086A SG 127753 A1 SG127753 A1 SG 127753A1
Authority
SG
Singapore
Prior art keywords
ferroelectric capacitor
ferroelectric memory
memory device
readout method
ferroelectric
Prior art date
Application number
SG200503086A
Inventor
Takehisa Ishida
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to SG200503086A priority Critical patent/SG127753A1/en
Publication of SG127753A1 publication Critical patent/SG127753A1/en

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

A ferroelectric memory device includes a plurality of memory cells, which each include a ferroelectric capacitor 1, 2, 3 arranged in proximity to a heating device, having a heater layer 4 and two electrodes 5, 6. When the data stored in the ferroelectric capacitor is to be retrieved, the heating device heats the ferroelectric capacitor. This, due to the pyroelectric effect, causes the ferroelectric capacitor to generate a voltage which is indicative of the polarization state of the ferroelectric capacitor, so measurement of the polarity of this voltage permits the stored data to be determined.
SG200503086A 2005-05-09 2005-05-09 Ferroelectric memory device, and readout method for such a device SG127753A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200503086A SG127753A1 (en) 2005-05-09 2005-05-09 Ferroelectric memory device, and readout method for such a device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200503086A SG127753A1 (en) 2005-05-09 2005-05-09 Ferroelectric memory device, and readout method for such a device

Publications (1)

Publication Number Publication Date
SG127753A1 true SG127753A1 (en) 2006-12-29

Family

ID=38461733

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200503086A SG127753A1 (en) 2005-05-09 2005-05-09 Ferroelectric memory device, and readout method for such a device

Country Status (1)

Country Link
SG (1) SG127753A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0589661A (en) * 1991-02-15 1993-04-09 Olympus Optical Co Ltd Ferroelectric memory
US5953245A (en) * 1996-11-21 1999-09-14 Rohm Co., Ltd. Semiconductor memory device and method of controlling imprint condition thereof
US20030202391A1 (en) * 2002-03-19 2003-10-30 Akitoshi Nishimura Dummy cell structure for 1T1C FeRAM cell array
EP1403876A1 (en) * 2002-09-30 2004-03-31 Texas Instruments Incorporated Ferroelectric memory with wide operating voltage and multi-bit storage per cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0589661A (en) * 1991-02-15 1993-04-09 Olympus Optical Co Ltd Ferroelectric memory
US5953245A (en) * 1996-11-21 1999-09-14 Rohm Co., Ltd. Semiconductor memory device and method of controlling imprint condition thereof
US20030202391A1 (en) * 2002-03-19 2003-10-30 Akitoshi Nishimura Dummy cell structure for 1T1C FeRAM cell array
EP1403876A1 (en) * 2002-09-30 2004-03-31 Texas Instruments Incorporated Ferroelectric memory with wide operating voltage and multi-bit storage per cell

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