SG122781A1 - A method for making auto-self-aligned top electrodes for dram capacitors with improved capacitor-to-bit-line contact overlay margin
- Google Patents
A method for making auto-self-aligned top electrodes for dram capacitors with improved capacitor-to-bit-line contact overlay margin
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Priority claimed from TW91102574Aexternal-prioritypatent/TW521400B/en
Priority claimed from US10/146,450external-prioritypatent/US6709919B2/en
Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Publication of SG122781A1publicationCriticalpatent/SG122781A1/en
SG200300548A2002-02-152003-02-13A method for making auto-self-aligned top electrodes for dram capacitors with improved capacitor-to-bit-line contact overlay margin
SG122781A1
(en)
Electrochemical capacitor, method for manufacturing electrode for electrochemical capacitor, and apparatus for manufacturing electrode for electrochemical capacitor