SG120865A1 - Method of forming epitaxial metal silicide for a semiconductor device - Google Patents

Method of forming epitaxial metal silicide for a semiconductor device

Info

Publication number
SG120865A1
SG120865A1 SG200201998A SG200201998A SG120865A1 SG 120865 A1 SG120865 A1 SG 120865A1 SG 200201998 A SG200201998 A SG 200201998A SG 200201998 A SG200201998 A SG 200201998A SG 120865 A1 SG120865 A1 SG 120865A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
metal silicide
forming epitaxial
epitaxial metal
forming
Prior art date
Application number
SG200201998A
Inventor
Mark Yeadon
Ryan Khoon Khye Chong
Original Assignee
Univ Singapore
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Singapore, Agency Science Tech & Res filed Critical Univ Singapore
Priority to SG200201998A priority Critical patent/SG120865A1/en
Publication of SG120865A1 publication Critical patent/SG120865A1/en

Links

SG200201998A 2002-04-03 2002-04-03 Method of forming epitaxial metal silicide for a semiconductor device SG120865A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200201998A SG120865A1 (en) 2002-04-03 2002-04-03 Method of forming epitaxial metal silicide for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200201998A SG120865A1 (en) 2002-04-03 2002-04-03 Method of forming epitaxial metal silicide for a semiconductor device

Publications (1)

Publication Number Publication Date
SG120865A1 true SG120865A1 (en) 2006-04-26

Family

ID=37111125

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200201998A SG120865A1 (en) 2002-04-03 2002-04-03 Method of forming epitaxial metal silicide for a semiconductor device

Country Status (1)

Country Link
SG (1) SG120865A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346465B1 (en) * 1997-06-23 2002-02-12 Nec Corportion Semiconductor device with silicide contact structure and fabrication method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346465B1 (en) * 1997-06-23 2002-02-12 Nec Corportion Semiconductor device with silicide contact structure and fabrication method thereof

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