SG119170A1 - A method to fabricate a square word line poly spacer - Google Patents

A method to fabricate a square word line poly spacer

Info

Publication number
SG119170A1
SG119170A1 SG200300241A SG200300241A SG119170A1 SG 119170 A1 SG119170 A1 SG 119170A1 SG 200300241 A SG200300241 A SG 200300241A SG 200300241 A SG200300241 A SG 200300241A SG 119170 A1 SG119170 A1 SG 119170A1
Authority
SG
Singapore
Prior art keywords
fabricate
word line
poly spacer
line poly
square word
Prior art date
Application number
SG200300241A
Inventor
Hsiu Ou-Yang
Wu Chi-San
Lo Chi-Hsing
Chen Bi-Ling
Sung Hung-Cheng
Tsai Chia-Shiung
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW91101847A external-priority patent/TW530379B/en
Priority claimed from US10/328,156 external-priority patent/US20040121545A1/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG119170A1 publication Critical patent/SG119170A1/en

Links

SG200300241A 2002-02-01 2003-03-31 A method to fabricate a square word line poly spacer SG119170A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91101847A TW530379B (en) 2002-02-01 2002-02-01 Poly-silicon spacer manufacturing method of split gate flash memory cell
US10/328,156 US20040121545A1 (en) 2002-12-23 2002-12-23 Method to fabricate a square word line poly spacer

Publications (1)

Publication Number Publication Date
SG119170A1 true SG119170A1 (en) 2006-02-28

Family

ID=36168947

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300241A SG119170A1 (en) 2002-02-01 2003-03-31 A method to fabricate a square word line poly spacer

Country Status (1)

Country Link
SG (1) SG119170A1 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284784A (en) * 1991-10-02 1994-02-08 National Semiconductor Corporation Buried bit-line source-side injection flash memory cell
US5915178A (en) * 1997-12-08 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region
US6069042A (en) * 1998-02-13 2000-05-30 Taiwan Semiconductor Manufacturing Company Multi-layer spacer technology for flash EEPROM
US6190961B1 (en) * 1999-09-22 2001-02-20 International Business Machines Corporation Fabricating a square spacer
US6204126B1 (en) * 2000-02-18 2001-03-20 Taiwan Semiconductor Manufacturing Company Method to fabricate a new structure with multi-self-aligned for split-gate flash
US20010011744A1 (en) * 1998-05-19 2001-08-09 Kuo-Tung Sung New poly spacer split gate cell with extremely small cell size
US6312989B1 (en) * 2000-01-21 2001-11-06 Taiwan Semiconductor Manufacturing Company Structure with protruding source in split-gate flash
US6593187B1 (en) * 2001-08-27 2003-07-15 Taiwan Semiconductor Manufacturing Company Method to fabricate a square poly spacer in flash

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284784A (en) * 1991-10-02 1994-02-08 National Semiconductor Corporation Buried bit-line source-side injection flash memory cell
US5915178A (en) * 1997-12-08 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region
US6069042A (en) * 1998-02-13 2000-05-30 Taiwan Semiconductor Manufacturing Company Multi-layer spacer technology for flash EEPROM
US20010011744A1 (en) * 1998-05-19 2001-08-09 Kuo-Tung Sung New poly spacer split gate cell with extremely small cell size
US6190961B1 (en) * 1999-09-22 2001-02-20 International Business Machines Corporation Fabricating a square spacer
US6312989B1 (en) * 2000-01-21 2001-11-06 Taiwan Semiconductor Manufacturing Company Structure with protruding source in split-gate flash
US6204126B1 (en) * 2000-02-18 2001-03-20 Taiwan Semiconductor Manufacturing Company Method to fabricate a new structure with multi-self-aligned for split-gate flash
US6593187B1 (en) * 2001-08-27 2003-07-15 Taiwan Semiconductor Manufacturing Company Method to fabricate a square poly spacer in flash

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