SG119170A1 - A method to fabricate a square word line poly spacer - Google Patents
A method to fabricate a square word line poly spacerInfo
- Publication number
- SG119170A1 SG119170A1 SG200300241A SG200300241A SG119170A1 SG 119170 A1 SG119170 A1 SG 119170A1 SG 200300241 A SG200300241 A SG 200300241A SG 200300241 A SG200300241 A SG 200300241A SG 119170 A1 SG119170 A1 SG 119170A1
- Authority
- SG
- Singapore
- Prior art keywords
- fabricate
- word line
- poly spacer
- line poly
- square word
- Prior art date
Links
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91101847A TW530379B (en) | 2002-02-01 | 2002-02-01 | Poly-silicon spacer manufacturing method of split gate flash memory cell |
US10/328,156 US20040121545A1 (en) | 2002-12-23 | 2002-12-23 | Method to fabricate a square word line poly spacer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG119170A1 true SG119170A1 (en) | 2006-02-28 |
Family
ID=36168947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200300241A SG119170A1 (en) | 2002-02-01 | 2003-03-31 | A method to fabricate a square word line poly spacer |
Country Status (1)
Country | Link |
---|---|
SG (1) | SG119170A1 (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
US5915178A (en) * | 1997-12-08 | 1999-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region |
US6069042A (en) * | 1998-02-13 | 2000-05-30 | Taiwan Semiconductor Manufacturing Company | Multi-layer spacer technology for flash EEPROM |
US6190961B1 (en) * | 1999-09-22 | 2001-02-20 | International Business Machines Corporation | Fabricating a square spacer |
US6204126B1 (en) * | 2000-02-18 | 2001-03-20 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a new structure with multi-self-aligned for split-gate flash |
US20010011744A1 (en) * | 1998-05-19 | 2001-08-09 | Kuo-Tung Sung | New poly spacer split gate cell with extremely small cell size |
US6312989B1 (en) * | 2000-01-21 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Structure with protruding source in split-gate flash |
US6593187B1 (en) * | 2001-08-27 | 2003-07-15 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a square poly spacer in flash |
-
2003
- 2003-03-31 SG SG200300241A patent/SG119170A1/en unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
US5915178A (en) * | 1997-12-08 | 1999-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region |
US6069042A (en) * | 1998-02-13 | 2000-05-30 | Taiwan Semiconductor Manufacturing Company | Multi-layer spacer technology for flash EEPROM |
US20010011744A1 (en) * | 1998-05-19 | 2001-08-09 | Kuo-Tung Sung | New poly spacer split gate cell with extremely small cell size |
US6190961B1 (en) * | 1999-09-22 | 2001-02-20 | International Business Machines Corporation | Fabricating a square spacer |
US6312989B1 (en) * | 2000-01-21 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Structure with protruding source in split-gate flash |
US6204126B1 (en) * | 2000-02-18 | 2001-03-20 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a new structure with multi-self-aligned for split-gate flash |
US6593187B1 (en) * | 2001-08-27 | 2003-07-15 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a square poly spacer in flash |
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