SG114599A1 - New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect - Google Patents

New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect

Info

Publication number
SG114599A1
SG114599A1 SG200300299A SG200300299A SG114599A1 SG 114599 A1 SG114599 A1 SG 114599A1 SG 200300299 A SG200300299 A SG 200300299A SG 200300299 A SG200300299 A SG 200300299A SG 114599 A1 SG114599 A1 SG 114599A1
Authority
SG
Singapore
Prior art keywords
fets
vertical
field penetration
accumulation
band
Prior art date
Application number
SG200300299A
Inventor
Min Hwa Chi
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW91101771A external-priority patent/TW525302B/en
Priority claimed from US10/268,585 external-priority patent/US20040070050A1/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG114599A1 publication Critical patent/SG114599A1/en

Links

SG200300299A 2002-02-01 2003-01-30 New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect SG114599A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91101771A TW525302B (en) 2002-02-01 2002-02-01 Vertical type semiconductor variable resistor device and its manufacturing method
US10/268,585 US20040070050A1 (en) 2002-10-10 2002-10-10 Structures of vertical resistors and FETs as controlled by electrical field penetration and a band-gap voltage reference using vertical FETs operating in accumulation through the field penetration effect

Publications (1)

Publication Number Publication Date
SG114599A1 true SG114599A1 (en) 2005-09-28

Family

ID=35125841

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300299A SG114599A1 (en) 2002-02-01 2003-01-30 New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect

Country Status (1)

Country Link
SG (1) SG114599A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001088984A1 (en) * 2000-05-16 2001-11-22 Infineon Technologies Ag Vertical transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001088984A1 (en) * 2000-05-16 2001-11-22 Infineon Technologies Ag Vertical transistor

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