SG114599A1 - New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect
- Google Patents
New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW91101771Aexternal-prioritypatent/TW525302B/en
Priority claimed from US10/268,585external-prioritypatent/US20040070050A1/en
Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Publication of SG114599A1publicationCriticalpatent/SG114599A1/en
SG200300299A2002-02-012003-01-30New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect
SG114599A1
(en)
Structures of vertical resistors and FETs as controlled by electrical field penetration and a band-gap voltage reference using vertical FETs operating in accumulation through the field penetration effect
New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect
New structures of vertical resistors and fets as controlled by electrical field penetration and a band-gap voltage reference using vertical fets operating in accumulation through the field penetration effect