SG11202109359RA - Composition comprising block copolymer, and method for producing siliceous film using the same - Google Patents

Composition comprising block copolymer, and method for producing siliceous film using the same

Info

Publication number
SG11202109359RA
SG11202109359RA SG11202109359RA SG11202109359RA SG 11202109359R A SG11202109359R A SG 11202109359RA SG 11202109359R A SG11202109359R A SG 11202109359RA SG 11202109359R A SG11202109359R A SG 11202109359RA
Authority
SG
Singapore
Prior art keywords
composition
same
block copolymer
siliceous film
producing siliceous
Prior art date
Application number
Inventor
Takashi Fujiwara
Atsuhiko Sato
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11202109359RA publication Critical patent/SG11202109359RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C08G77/08—Preparatory processes characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/32—Post-polymerisation treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G81/00—Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2150/00—Compositions for coatings
SG11202109359R 2019-04-08 2020-04-06 Composition comprising block copolymer, and method for producing siliceous film using the same SG11202109359RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19167746 2019-04-08
PCT/EP2020/059723 WO2020207950A1 (en) 2019-04-08 2020-04-06 Composition comprising block copolymer, and method for producing siliceous film using the same

Publications (1)

Publication Number Publication Date
SG11202109359RA true SG11202109359RA (en) 2021-10-28

Family

ID=66286061

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109359R SG11202109359RA (en) 2019-04-08 2020-04-06 Composition comprising block copolymer, and method for producing siliceous film using the same

Country Status (8)

Country Link
US (1) US11760842B2 (en)
EP (1) EP3953416B1 (en)
JP (1) JP7110499B2 (en)
KR (1) KR102572915B1 (en)
CN (1) CN113677744A (en)
SG (1) SG11202109359RA (en)
TW (1) TW202104382A (en)
WO (1) WO2020207950A1 (en)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126300A (en) * 1975-04-26 1976-11-04 Res Inst Iron Steel Tohoku Univ Method for manufacturing an organoo silicon polymer having silicon and carbon atoms as main skeleton component
US4347347A (en) * 1979-06-28 1982-08-31 Ube Industries, Ltd. Crosslinked organometallic block copolymers and process for production thereof
US4590253A (en) * 1981-08-26 1986-05-20 Kurosaki Refractoris Co., Ltd. Organosilicon polymer and process for production thereof
JPS58215426A (en) * 1982-06-03 1983-12-14 ウイスコンシン、アラムナイ、リサーチ、フアウンデーシヨン Method of bridging soluble polysilastyrene
US4473411A (en) * 1983-07-20 1984-09-25 Armco Inc. Process of making aluminum killed low manganese deep drawing steel
KR940007325B1 (en) * 1991-02-25 1994-08-13 한국과학기술연구원 Process for preparation of polysila methylrenosilane
JP3418458B2 (en) 1993-08-31 2003-06-23 富士通株式会社 Method for manufacturing semiconductor device
JP3375401B2 (en) * 1993-12-28 2003-02-10 ダウ コーニング アジア株式会社 Polycarbosilane block copolymer
JP2001093824A (en) * 1999-09-27 2001-04-06 Shin Etsu Chem Co Ltd Composition for resist base layer and method for formation of pattern
JP4334790B2 (en) * 2001-09-19 2009-09-30 独立行政法人科学技術振興機構 Manufacture of SiC reinforcing fiber for SiC composite materials
JP5110239B2 (en) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 Method for forming organic silica film, composition for film formation
CN1950473B (en) * 2004-05-11 2010-10-27 Jsr株式会社 Insulating film forming composition, preparing method thereof, silica dioxide insulating film and preparing method thereof
JP5321771B2 (en) * 2005-11-11 2013-10-23 Ｊｓｒ株式会社 Method for producing polycarbosilane
JP4766267B2 (en) 2007-02-26 2011-09-07 Ｊｓｒ株式会社 Film, method for forming the same, and semiconductor device
JP5067537B2 (en) * 2007-03-02 2012-11-07 日産化学工業株式会社 Resist underlayer film forming composition containing polynuclear phenol
DE102008064372A1 (en) 2008-12-22 2010-06-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Polysilane-polycarbosilanes with reduced chlorine content based on methylchloropolysilanes and spinning compositions and ceramic molded articles produced therefrom
JP2010248299A (en) * 2009-04-13 2010-11-04 National Institute Of Advanced Industrial Science & Technology Visible light-absorbing thin film and method for producing the same
DE102009055429A1 (en) * 2009-12-30 2011-07-07 Sgl Carbon Se, 65203 Process for the production of ceramic fibers having a composition in the range of SiC and SiC fibers
CN103649177A (en) * 2011-06-16 2014-03-19 道康宁公司 Method of forming polysilanes and polycarbosilanes in the presence of a metal silicide
JP2019034993A (en) * 2017-08-10 2019-03-07 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Silicon carbonaceous film forming composition comprising polycarbosilane and method for manufacturing silicon carbonaceous film using the same

Also Published As

Publication number Publication date
KR20210151893A (en) 2021-12-14
US11760842B2 (en) 2023-09-19
WO2020207950A1 (en) 2020-10-15
TW202104382A (en) 2021-02-01
KR102572915B1 (en) 2023-09-01
US20220204704A1 (en) 2022-06-30
CN113677744A (en) 2021-11-19
EP3953416A1 (en) 2022-02-16
JP2022522034A (en) 2022-04-13
EP3953416B1 (en) 2022-10-26
JP7110499B2 (en) 2022-08-01

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