SG11202107642VA - A comparator for controlling dead-time between switching transistors - Google Patents

A comparator for controlling dead-time between switching transistors

Info

Publication number
SG11202107642VA
SG11202107642VA SG11202107642VA SG11202107642VA SG11202107642VA SG 11202107642V A SG11202107642V A SG 11202107642VA SG 11202107642V A SG11202107642V A SG 11202107642VA SG 11202107642V A SG11202107642V A SG 11202107642VA SG 11202107642V A SG11202107642V A SG 11202107642VA
Authority
SG
Singapore
Prior art keywords
comparator
time
switching transistors
controlling dead
dead
Prior art date
Application number
SG11202107642VA
Inventor
Yong-Joon Jeon
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of SG11202107642VA publication Critical patent/SG11202107642VA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
SG11202107642VA 2019-01-25 2020-01-21 A comparator for controlling dead-time between switching transistors SG11202107642VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201900698X 2019-01-25
PCT/SG2020/050027 WO2020153904A1 (en) 2019-01-25 2020-01-21 A comparator for controlling dead-time between switching transistors

Publications (1)

Publication Number Publication Date
SG11202107642VA true SG11202107642VA (en) 2021-08-30

Family

ID=71737445

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202107642VA SG11202107642VA (en) 2019-01-25 2020-01-21 A comparator for controlling dead-time between switching transistors

Country Status (3)

Country Link
US (1) US11469755B2 (en)
SG (1) SG11202107642VA (en)
WO (1) WO2020153904A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11621709B2 (en) * 2020-05-13 2023-04-04 Fuji Electric Co., Ltd. Power module with built-in drive circuits

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541541A (en) 1994-11-23 1996-07-30 Texas Instruments Incorporated Comparator circuit for decreasing shoot-through current on power switches
GB0314563D0 (en) * 2003-06-21 2003-07-30 Koninkl Philips Electronics Nv Dead time control in a switching circuit
JP2007274831A (en) * 2006-03-31 2007-10-18 Hitachi Ltd Power conversion device
JP4946508B2 (en) * 2007-02-28 2012-06-06 株式会社日立製作所 Semiconductor circuit
US7986172B2 (en) * 2009-08-31 2011-07-26 Freescale Semiconductor, Inc. Switching circuit with gate driver having precharge period and method therefor
DE102013208813A1 (en) * 2013-05-14 2014-11-20 Robert Bosch Gmbh Control of a half bridge
WO2015152834A1 (en) * 2014-04-02 2015-10-08 Nanyang Technological University A dead time circuit for a switching circuit and a switching amplifier
JP6497070B2 (en) * 2014-12-26 2019-04-10 富士電機株式会社 Semiconductor device and control method thereof
WO2016188385A1 (en) * 2015-05-22 2016-12-01 The Hong Kong University Of Science And Technology Gallium nitride driver with tuned dead-time
DE112016001924B4 (en) * 2015-07-08 2023-12-07 Aisin Corporation Driver device
JP6472763B2 (en) * 2016-02-03 2019-02-20 株式会社東芝 Gate control circuit and power supply circuit
US10141845B2 (en) * 2016-04-13 2018-11-27 Texas Instruments Incorporated DC-DC converter and control circuit with low-power clocked comparator referenced to switching node for zero voltage switching
US10135432B2 (en) * 2016-09-07 2018-11-20 Texas Instruments Incorporated Methods and apparatus for low current control for a power connection
WO2018211840A1 (en) * 2017-05-16 2018-11-22 富士電機株式会社 Control device and semiconductor apparatus
JP7073706B2 (en) * 2017-12-19 2022-05-24 富士電機株式会社 Drives and semiconductor devices
CN208015586U (en) * 2018-03-12 2018-10-26 无锡安趋电子有限公司 A kind of anti-straight-through protection adaptive dead zone circuit and the driving circuit comprising the circuit
US11057023B1 (en) * 2020-04-03 2021-07-06 Psemi Corporation Accurate high-voltage gate detector

Also Published As

Publication number Publication date
US11469755B2 (en) 2022-10-11
WO2020153904A1 (en) 2020-07-30
US20220085803A1 (en) 2022-03-17

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