SG11202104479WA - Electrodeposition of nanotwinned copper structures - Google Patents

Electrodeposition of nanotwinned copper structures

Info

Publication number
SG11202104479WA
SG11202104479WA SG11202104479WA SG11202104479WA SG11202104479WA SG 11202104479W A SG11202104479W A SG 11202104479WA SG 11202104479W A SG11202104479W A SG 11202104479WA SG 11202104479W A SG11202104479W A SG 11202104479WA SG 11202104479W A SG11202104479W A SG 11202104479WA
Authority
SG
Singapore
Prior art keywords
electrodeposition
copper structures
nanotwinned copper
nanotwinned
structures
Prior art date
Application number
SG11202104479WA
Inventor
Ii Stephen Banik
Bryan Buckalew
Justin Oberst
Bhuvan Dua
Anica Nicole Neumann
Thomas Ponnuswamy
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202104479WA publication Critical patent/SG11202104479WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
SG11202104479WA 2018-10-31 2019-10-28 Electrodeposition of nanotwinned copper structures SG11202104479WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862753846P 2018-10-31 2018-10-31
PCT/US2019/058354 WO2020092244A1 (en) 2018-10-31 2019-10-28 Electrodeposition of nanotwinned copper structures

Publications (1)

Publication Number Publication Date
SG11202104479WA true SG11202104479WA (en) 2021-05-28

Family

ID=70464609

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202104479WA SG11202104479WA (en) 2018-10-31 2019-10-28 Electrodeposition of nanotwinned copper structures

Country Status (6)

Country Link
US (1) US20220010446A1 (en)
KR (1) KR20210069118A (en)
CN (1) CN113260739A (en)
SG (1) SG11202104479WA (en)
TW (1) TW202035797A (en)
WO (1) WO2020092244A1 (en)

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US11901585B2 (en) 2019-11-23 2024-02-13 Apple Inc. Nanotwin copper components
TWI741466B (en) * 2019-12-27 2021-10-01 鉑識科技股份有限公司 Nano-twinned crystal film prepared by water/alcohol-soluble organic additives and method of fabricating the same
JP2023526385A (en) * 2020-05-18 2023-06-21 ラム リサーチ コーポレーション Electroplating of nanotwinned copper features and non-nanotwinned copper features
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
US11538756B2 (en) * 2020-09-16 2022-12-27 Advanced Semiconductor Engineering, Inc. Bonding structure and method for manufacturing the same
TW202233895A (en) * 2021-02-17 2022-09-01 國立陽明交通大學 Twinned copper layer, substrate having the same and method for preparing the same
TWI753798B (en) * 2021-03-16 2022-01-21 財團法人工業技術研究院 Through substrate via structure and manufacturing method thereof, redistribution layer structure and manufacturing method thereof
TWI810631B (en) * 2021-08-20 2023-08-01 樂鑫材料科技股份有限公司 Method for forming metallic nano-twinned thin film structure
US11634830B2 (en) 2021-08-25 2023-04-25 Applied Materials, Inc. Electrochemical depositions of nanotwin copper materials
TWI803984B (en) * 2021-09-22 2023-06-01 樂鑫材料科技股份有限公司 Nano-twinned structure on metallic thin film surface and method for forming the same
CN113802155A (en) * 2021-10-09 2021-12-17 南开大学 Room temperature electrodeposition preparation method of high-crystal-plane preferred orientation copper foil
CN114086229B (en) * 2021-10-27 2022-11-25 中山市仲德科技有限公司 Groove liquid for preparing liquid absorption core and preparation method of liquid absorption core
CN114232037B (en) * 2021-12-29 2023-03-28 中国科学院金属研究所 Nano twin crystal copper foil and preparation method thereof, circuit board and current collector
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition

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Publication number Priority date Publication date Assignee Title
US5431803A (en) * 1990-05-30 1995-07-11 Gould Electronics Inc. Electrodeposited copper foil and process for making same
US7736448B2 (en) * 2002-11-01 2010-06-15 Institute Of Metal Research Chinese Academy Of Sciences Nano icrystals copper material with super high strength and conductivity and method of preparing thereof
CN1234914C (en) * 2002-11-01 2006-01-04 中国科学院金属研究所 Nano twin crystal copper material with ultrahigh strength and superhigh conductivity as well as preparation method
CN100503880C (en) * 2007-03-08 2009-06-24 复旦大学 Method of preparing nanometer scale twin crystal copper thin film
FR2949121A1 (en) * 2009-08-12 2011-02-18 Alchimer ELECTROLYTE AND METHOD FOR ELECTRODEPOSITION OF COPPER ON A BARRIER LAYER, AND SEMICONDUCTOR SUBSTRATE OBTAINED BY SUCH A METHOD
US8795480B2 (en) * 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
CN102400188B (en) * 2010-09-10 2014-10-22 中国科学院金属研究所 (111) texture nano-grade twin crystal Cu block material and preparation method thereof
KR101255548B1 (en) * 2011-02-24 2013-04-17 한양대학교 에리카산학협력단 Forming method for nanotwined copper material
TWI432613B (en) * 2011-11-16 2014-04-01 Univ Nat Chiao Tung Electrodeposited nano-twins copper layer and method of fabricating the same
CN105097746A (en) * 2015-07-07 2015-11-25 中国科学院上海微系统与信息技术研究所 Nano twin copper-based under bump metal layer and preparation method thereof
KR102578794B1 (en) * 2016-06-14 2023-09-18 삼성전자주식회사 Semiconductor device and method for manufacturing the same
US10515923B2 (en) * 2017-05-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor package structure with twinned copper layer

Also Published As

Publication number Publication date
KR20210069118A (en) 2021-06-10
TW202035797A (en) 2020-10-01
WO2020092244A1 (en) 2020-05-07
US20220010446A1 (en) 2022-01-13
CN113260739A (en) 2021-08-13

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