SG11202102412UA - Semiconductor aqueous composition and use of the same - Google Patents
Semiconductor aqueous composition and use of the sameInfo
- Publication number
- SG11202102412UA SG11202102412UA SG11202102412UA SG11202102412UA SG11202102412UA SG 11202102412U A SG11202102412U A SG 11202102412UA SG 11202102412U A SG11202102412U A SG 11202102412UA SG 11202102412U A SG11202102412U A SG 11202102412UA SG 11202102412U A SG11202102412U A SG 11202102412UA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- aqueous composition
- semiconductor aqueous
- semiconductor
- composition
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/88—Ampholytes; Electroneutral compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/42—Amino alcohols or amino ethers
- C11D1/44—Ethers of polyoxyalkylenes with amino alcohols; Condensation products of epoxyalkanes with amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2041—Dihydric alcohols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/47—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018199941A JP2020067547A (en) | 2018-10-24 | 2018-10-24 | Semiconductor aqueous composition and use of the same |
PCT/EP2019/078495 WO2020083809A1 (en) | 2018-10-24 | 2019-10-21 | Semiconductor aqueous composition and use of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202102412UA true SG11202102412UA (en) | 2021-05-28 |
Family
ID=68392950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202102412UA SG11202102412UA (en) | 2018-10-24 | 2019-10-21 | Semiconductor aqueous composition and use of the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US20210403829A1 (en) |
EP (1) | EP3871046A1 (en) |
JP (3) | JP2020067547A (en) |
KR (2) | KR20230132609A (en) |
CN (1) | CN112912799A (en) |
SG (1) | SG11202102412UA (en) |
TW (1) | TWI807119B (en) |
WO (1) | WO2020083809A1 (en) |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3817012A1 (en) | 1988-05-19 | 1989-11-30 | Basf Ag | POSITIVE AND NEGATIVE WORKING RADIATION-SENSITIVE MIXTURES AND METHOD FOR THE PRODUCTION OF RELIEF PATTERNS |
DE68926019T2 (en) | 1988-10-28 | 1996-10-02 | Ibm | Positive working, highly sensitive photoresist composition |
JPH02141636A (en) | 1988-11-24 | 1990-05-31 | Kawasaki Steel Corp | Diagnosis of inner leak in hydraulic system |
EP0388343B1 (en) | 1989-03-14 | 1996-07-17 | International Business Machines Corporation | Chemically amplified photoresist |
DE4007924A1 (en) | 1990-03-13 | 1991-09-19 | Basf Ag | Radiation-sensitive mixt., esp. for positive photoresists - contains phenolic resin binder in which 30-70 per cent of hydroxyl gps. are protected, esp. by 2-tetra:hydro-pyranyl or -furanyl gps. |
DE4202845A1 (en) | 1992-01-31 | 1993-08-05 | Basf Ag | RADIATION-SENSITIVE MIXTURE |
DE4217366A1 (en) * | 1992-05-26 | 1993-12-02 | Bayer Ag | Imides and their salts and their use |
JP3297272B2 (en) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | Resist composition and method of forming resist pattern |
JP3751065B2 (en) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | Resist material and resist pattern forming method |
JP3380128B2 (en) | 1996-11-29 | 2003-02-24 | 富士通株式会社 | Resist material and method of forming resist pattern |
AU7954898A (en) * | 1997-12-10 | 1999-06-28 | Minnesota Mining And Manufacturing Company | Bis(perfluoroalkylsulfonyl)imide surfactant salts in electrochemical systems |
US7521405B2 (en) * | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US6555510B2 (en) * | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
KR20050044085A (en) * | 2003-11-07 | 2005-05-12 | 삼성전자주식회사 | Aqueous cleaning solution for integrated circuit device and cleaning method using the cleaning solution |
JP4493393B2 (en) * | 2004-04-23 | 2010-06-30 | 東京応化工業株式会社 | Rinsing liquid for lithography |
DE602005021212D1 (en) * | 2004-04-27 | 2010-06-24 | Tokyo Ohka Kogyo Co Ltd | MATERIAL FOR FORMING A RESISTANCE FILM FOR THE IMMERSION EXPOSURE METHOD AND METHOD FOR FORMING A RESIST PATTERN USING THE PROTECTION FILM |
TWI387629B (en) * | 2004-07-26 | 2013-03-01 | Nitto Denko Corp | Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheets, and surface protecting film |
JP4368266B2 (en) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | Resist protective film forming material and resist pattern forming method using the same |
US20080193876A1 (en) * | 2004-09-01 | 2008-08-14 | Tokyo Ohka Kogyo Co., Ltd. | Rinsing Liquid for Lithography and Method for Resist Pattern Formation |
JPWO2007026528A1 (en) * | 2005-08-30 | 2009-03-05 | コニカミノルタエムジー株式会社 | Developer and processing method for photosensitive lithographic printing plate |
US8158328B2 (en) * | 2007-02-15 | 2012-04-17 | Tokyo Ohka Kogyo Co., Ltd. | Composition for formation of anti-reflection film, and method for formation of resist pattern using the same |
JP5069494B2 (en) | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same |
JP5336306B2 (en) | 2008-10-20 | 2013-11-06 | 信越化学工業株式会社 | Resist underlayer film forming method, pattern forming method using the same, and resist underlayer film material |
JP5639780B2 (en) * | 2010-03-26 | 2014-12-10 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
JP5591623B2 (en) * | 2010-08-13 | 2014-09-17 | AzエレクトロニックマテリアルズIp株式会社 | Rinsing liquid for lithography and pattern forming method using the same |
KR20120066227A (en) * | 2010-12-14 | 2012-06-22 | 주식회사 동진쎄미켐 | Cleaning composition for photolithography |
JP6106990B2 (en) * | 2012-08-27 | 2017-04-05 | 富士通株式会社 | Lithographic rinse agent, resist pattern forming method, and semiconductor device manufacturing method |
JP6002705B2 (en) * | 2013-03-01 | 2016-10-05 | 富士フイルム株式会社 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and electronic device manufacturing method |
WO2014136900A1 (en) * | 2013-03-08 | 2014-09-12 | 日立化成株式会社 | Ionic-compound-containing treatment solution, organic electronic element, and method for manufacturing organic electronic element |
JP6240404B2 (en) * | 2013-05-09 | 2017-11-29 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | Rinsing liquid for lithography and pattern forming method using the same |
JP6658204B2 (en) * | 2015-04-28 | 2020-03-04 | 信越化学工業株式会社 | Photoacid generator, resist composition and pattern forming method |
WO2017220479A1 (en) * | 2016-06-20 | 2017-12-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | A rinse composition, a method for forming resist patterns and a method for making semiconductor devices |
US11156920B2 (en) | 2016-11-25 | 2021-10-26 | Merck Patent Gmbh | Lithography composition, a method for forming resist patterns and a method for making semiconductor devices |
JP6714533B2 (en) * | 2017-03-22 | 2020-06-24 | 信越化学工業株式会社 | Sulfonium salt, resist composition, and pattern forming method |
-
2018
- 2018-10-24 JP JP2018199941A patent/JP2020067547A/en active Pending
-
2019
- 2019-10-21 US US17/288,196 patent/US20210403829A1/en active Pending
- 2019-10-21 JP JP2021520600A patent/JP7062839B2/en active Active
- 2019-10-21 KR KR1020237029820A patent/KR20230132609A/en active Application Filing
- 2019-10-21 KR KR1020217015481A patent/KR102575353B1/en active IP Right Grant
- 2019-10-21 WO PCT/EP2019/078495 patent/WO2020083809A1/en unknown
- 2019-10-21 SG SG11202102412UA patent/SG11202102412UA/en unknown
- 2019-10-21 EP EP19795478.7A patent/EP3871046A1/en active Pending
- 2019-10-21 CN CN201980069874.3A patent/CN112912799A/en active Pending
- 2019-10-22 TW TW108138031A patent/TWI807119B/en active
-
2022
- 2022-03-09 JP JP2022036518A patent/JP7411702B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2020067547A (en) | 2020-04-30 |
JP7062839B2 (en) | 2022-05-06 |
JP2022082579A (en) | 2022-06-02 |
KR20230132609A (en) | 2023-09-15 |
KR20210080490A (en) | 2021-06-30 |
TWI807119B (en) | 2023-07-01 |
EP3871046A1 (en) | 2021-09-01 |
JP2021535619A (en) | 2021-12-16 |
TW202028447A (en) | 2020-08-01 |
CN112912799A (en) | 2021-06-04 |
KR102575353B1 (en) | 2023-09-07 |
WO2020083809A1 (en) | 2020-04-30 |
JP7411702B2 (en) | 2024-01-11 |
US20210403829A1 (en) | 2021-12-30 |
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