SG11202005903SA - Techniques to update a trim parameter in non-volatile memory - Google Patents

Techniques to update a trim parameter in non-volatile memory

Info

Publication number
SG11202005903SA
SG11202005903SA SG11202005903SA SG11202005903SA SG11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA
Authority
SG
Singapore
Prior art keywords
update
techniques
volatile memory
trim parameter
trim
Prior art date
Application number
SG11202005903SA
Inventor
Shekoufeh Qawami
Doyle W Rivers
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11202005903SA publication Critical patent/SG11202005903SA/en

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G06F3/0607—Improving or facilitating administration, e.g. storage management by facilitating the process of upgrading existing storage systems, e.g. for improving compatibility between host and storage device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
SG11202005903SA 2017-12-28 2018-12-14 Techniques to update a trim parameter in non-volatile memory SG11202005903SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/857,054 US10649656B2 (en) 2017-12-28 2017-12-28 Techniques to update a trim parameter in non-volatile memory
PCT/US2018/065769 WO2019133300A1 (en) 2017-12-28 2018-12-14 Techniques to update a trim parameter in non-volatile memory

Publications (1)

Publication Number Publication Date
SG11202005903SA true SG11202005903SA (en) 2020-07-29

Family

ID=67057655

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005903SA SG11202005903SA (en) 2017-12-28 2018-12-14 Techniques to update a trim parameter in non-volatile memory

Country Status (8)

Country Link
US (3) US10649656B2 (en)
EP (1) EP3732687B1 (en)
JP (1) JP7219281B2 (en)
KR (1) KR102371450B1 (en)
CN (1) CN111566739B (en)
SG (1) SG11202005903SA (en)
TW (1) TWI685844B (en)
WO (1) WO2019133300A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112732478B (en) * 2021-01-08 2023-05-16 浪潮商用机器有限公司 Modification method, device, equipment and storage medium of server parameters
CN113190472B (en) * 2021-05-27 2023-10-13 深圳忆联信息系统有限公司 Method and device for quickly reconstructing NOMAP information of solid-state storage equipment, computer equipment and storage medium
US20240053905A1 (en) * 2022-08-15 2024-02-15 Micron Technology, Inc. Compression and decompression of trim data

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US6198668B1 (en) * 1999-07-19 2001-03-06 Interval Research Corporation Memory cell array for performing a comparison
US6321142B1 (en) * 2000-05-16 2001-11-20 Cummins Engine Company, Inc. System for programming a vehicle control computer with selectable features and/or trim values
US7660998B2 (en) 2002-12-02 2010-02-09 Silverbrook Research Pty Ltd Relatively unique ID in integrated circuit
JP4159973B2 (en) * 2003-11-19 2008-10-01 株式会社クリーチャーズ Game data control program, game data rewriting program, and game data rewriting device
US7580287B2 (en) 2005-09-01 2009-08-25 Micron Technology, Inc. Program and read trim setting
US7463520B2 (en) 2006-03-24 2008-12-09 Micron Technology, Inc. Memory device with variable trim settings
US7589652B2 (en) 2007-04-12 2009-09-15 Microchip Technology Incorporated Read and write interface communications protocol for digital-to-analog signal converter with non-volatile memory
US7869273B2 (en) 2007-09-04 2011-01-11 Sandisk Corporation Reducing the impact of interference during programming
JP4554660B2 (en) 2007-11-01 2010-09-29 株式会社コナミデジタルエンタテインメント Storage processing device, information providing server, operation method, and program
JP5124244B2 (en) 2007-11-16 2013-01-23 株式会社リコー Semiconductor integrated circuit, security method, security program, and recording medium
US8516260B2 (en) * 2008-10-27 2013-08-20 Advanced Micro Devices, Inc. Method, apparatus, and device for providing security among a calling function and a target function
US8443263B2 (en) 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
JP5484117B2 (en) * 2010-02-17 2014-05-07 株式会社日立製作所 Hypervisor and server device
US8737141B2 (en) * 2010-07-07 2014-05-27 Stec, Inc. Apparatus and method for determining an operating condition of a memory cell based on cycle information
US11232022B2 (en) 2010-10-29 2022-01-25 Samsung Electronics Co., Ltd. Memory system, data storage device, user device and data management method thereof having a data management information matching determination
KR101810932B1 (en) * 2011-04-27 2017-12-20 시게이트 테크놀로지 엘엘씨 Method for managing address mapping information, accessing method of disk drive, method for managing address mapping information via network, and storage device, computer system and storage medium applying the same
US8996768B2 (en) 2012-05-31 2015-03-31 Sandisk Technologies Inc. Method and storage device for assessing execution of trim commands
JP5911456B2 (en) * 2012-06-27 2016-04-27 日本電波工業株式会社 Electronics
US9257182B2 (en) 2012-12-21 2016-02-09 Micron Technology, Inc. Memory devices and their operation having trim registers associated with access operation commands
JP6158952B2 (en) * 2013-02-05 2017-07-05 エイアールエム リミテッド Operation of data processor memory access operations
US9007867B2 (en) * 2013-02-28 2015-04-14 Micron Technology, Inc. Loading trim address and trim data pairs
US9367391B2 (en) 2013-03-15 2016-06-14 Micron Technology, Inc. Error correction operations in a memory device
US20150095551A1 (en) 2013-09-30 2015-04-02 Micron Technology, Inc. Volatile memory architecutre in non-volatile memory devices and related controllers
JP2015082166A (en) * 2013-10-22 2015-04-27 ルネサスエレクトロニクス株式会社 Method for managing data storage flash memory and program therefor
TWI545567B (en) 2013-12-20 2016-08-11 Toshiba Kk Memory system
US9594516B2 (en) * 2014-02-14 2017-03-14 Sony Semiconductor Solutions Corporation Memory device with variable trim parameters
US9741403B2 (en) * 2014-11-12 2017-08-22 Micron Technology, Inc. Apparatuses and methods to perform post package trim
US20170062023A1 (en) * 2015-08-26 2017-03-02 Intel Corporation Systems and methods to rejuvenate nonvolatile memory using timestamps
US10282224B2 (en) * 2015-09-22 2019-05-07 Qualcomm Incorporated Dynamic register virtualization
US10423783B2 (en) * 2016-12-19 2019-09-24 Intel Corporation Methods and apparatus to recover a processor state during a system failure or security event

Also Published As

Publication number Publication date
EP3732687A4 (en) 2021-11-10
JP7219281B2 (en) 2023-02-07
US10649656B2 (en) 2020-05-12
KR20200089768A (en) 2020-07-27
US11194472B2 (en) 2021-12-07
EP3732687B1 (en) 2024-01-31
JP2021509216A (en) 2021-03-18
TW201933360A (en) 2019-08-16
CN111566739B (en) 2023-11-14
US20220057939A1 (en) 2022-02-24
TWI685844B (en) 2020-02-21
EP3732687A1 (en) 2020-11-04
CN111566739A (en) 2020-08-21
US20190205030A1 (en) 2019-07-04
US11928330B2 (en) 2024-03-12
WO2019133300A1 (en) 2019-07-04
KR102371450B1 (en) 2022-03-07
US20200241751A1 (en) 2020-07-30

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