SG11202005903SA - Techniques to update a trim parameter in non-volatile memory - Google Patents
Techniques to update a trim parameter in non-volatile memoryInfo
- Publication number
- SG11202005903SA SG11202005903SA SG11202005903SA SG11202005903SA SG11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA SG 11202005903S A SG11202005903S A SG 11202005903SA
- Authority
- SG
- Singapore
- Prior art keywords
- update
- techniques
- volatile memory
- trim parameter
- trim
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
- G06F3/0607—Improving or facilitating administration, e.g. storage management by facilitating the process of upgrading existing storage systems, e.g. for improving compatibility between host and storage device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/857,054 US10649656B2 (en) | 2017-12-28 | 2017-12-28 | Techniques to update a trim parameter in non-volatile memory |
PCT/US2018/065769 WO2019133300A1 (en) | 2017-12-28 | 2018-12-14 | Techniques to update a trim parameter in non-volatile memory |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202005903SA true SG11202005903SA (en) | 2020-07-29 |
Family
ID=67057655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202005903SA SG11202005903SA (en) | 2017-12-28 | 2018-12-14 | Techniques to update a trim parameter in non-volatile memory |
Country Status (8)
Country | Link |
---|---|
US (3) | US10649656B2 (en) |
EP (1) | EP3732687B1 (en) |
JP (1) | JP7219281B2 (en) |
KR (1) | KR102371450B1 (en) |
CN (1) | CN111566739B (en) |
SG (1) | SG11202005903SA (en) |
TW (1) | TWI685844B (en) |
WO (1) | WO2019133300A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112882650B (en) * | 2019-11-29 | 2024-04-30 | 慧荣科技股份有限公司 | Data storage device and non-volatile memory control method |
CN112732478B (en) * | 2021-01-08 | 2023-05-16 | 浪潮商用机器有限公司 | Modification method, device, equipment and storage medium of server parameters |
CN113190472B (en) * | 2021-05-27 | 2023-10-13 | 深圳忆联信息系统有限公司 | Method and device for quickly reconstructing NOMAP information of solid-state storage equipment, computer equipment and storage medium |
US20240053905A1 (en) * | 2022-08-15 | 2024-02-15 | Micron Technology, Inc. | Compression and decompression of trim data |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6198668B1 (en) * | 1999-07-19 | 2001-03-06 | Interval Research Corporation | Memory cell array for performing a comparison |
US6321142B1 (en) * | 2000-05-16 | 2001-11-20 | Cummins Engine Company, Inc. | System for programming a vehicle control computer with selectable features and/or trim values |
US7152942B2 (en) | 2002-12-02 | 2006-12-26 | Silverbrook Research Pty Ltd | Fixative compensation |
JP4159973B2 (en) * | 2003-11-19 | 2008-10-01 | 株式会社クリーチャーズ | Game data control program, game data rewriting program, and game data rewriting device |
US7580287B2 (en) | 2005-09-01 | 2009-08-25 | Micron Technology, Inc. | Program and read trim setting |
US7463520B2 (en) | 2006-03-24 | 2008-12-09 | Micron Technology, Inc. | Memory device with variable trim settings |
US7589652B2 (en) | 2007-04-12 | 2009-09-15 | Microchip Technology Incorporated | Read and write interface communications protocol for digital-to-analog signal converter with non-volatile memory |
US7869273B2 (en) | 2007-09-04 | 2011-01-11 | Sandisk Corporation | Reducing the impact of interference during programming |
JP4554660B2 (en) * | 2007-11-01 | 2010-09-29 | 株式会社コナミデジタルエンタテインメント | Storage processing device, information providing server, operation method, and program |
JP5124244B2 (en) * | 2007-11-16 | 2013-01-23 | 株式会社リコー | Semiconductor integrated circuit, security method, security program, and recording medium |
US8464011B2 (en) * | 2008-10-27 | 2013-06-11 | Advanced Micro Devices, Inc. | Method and apparatus for providing secure register access |
US8443263B2 (en) | 2009-12-30 | 2013-05-14 | Sandisk Technologies Inc. | Method and controller for performing a copy-back operation |
JP5484117B2 (en) * | 2010-02-17 | 2014-05-07 | 株式会社日立製作所 | Hypervisor and server device |
US8737141B2 (en) * | 2010-07-07 | 2014-05-27 | Stec, Inc. | Apparatus and method for determining an operating condition of a memory cell based on cycle information |
TWI579692B (en) | 2010-10-29 | 2017-04-21 | 三星電子股份有限公司 | Memory system, data storage device, user device and data management method thereof |
KR101810932B1 (en) * | 2011-04-27 | 2017-12-20 | 시게이트 테크놀로지 엘엘씨 | Method for managing address mapping information, accessing method of disk drive, method for managing address mapping information via network, and storage device, computer system and storage medium applying the same |
US8996768B2 (en) | 2012-05-31 | 2015-03-31 | Sandisk Technologies Inc. | Method and storage device for assessing execution of trim commands |
JP5911456B2 (en) * | 2012-06-27 | 2016-04-27 | 日本電波工業株式会社 | Electronics |
US9257182B2 (en) * | 2012-12-21 | 2016-02-09 | Micron Technology, Inc. | Memory devices and their operation having trim registers associated with access operation commands |
WO2014122414A1 (en) * | 2013-02-05 | 2014-08-14 | Arm Limited | Handling memory access operations in a data processing apparatus |
US9007867B2 (en) * | 2013-02-28 | 2015-04-14 | Micron Technology, Inc. | Loading trim address and trim data pairs |
US9367391B2 (en) | 2013-03-15 | 2016-06-14 | Micron Technology, Inc. | Error correction operations in a memory device |
US20150095551A1 (en) | 2013-09-30 | 2015-04-02 | Micron Technology, Inc. | Volatile memory architecutre in non-volatile memory devices and related controllers |
JP2015082166A (en) * | 2013-10-22 | 2015-04-27 | ルネサスエレクトロニクス株式会社 | Method for managing data storage flash memory and program therefor |
TWI545567B (en) | 2013-12-20 | 2016-08-11 | Toshiba Kk | Memory system |
US9594516B2 (en) * | 2014-02-14 | 2017-03-14 | Sony Semiconductor Solutions Corporation | Memory device with variable trim parameters |
US9741403B2 (en) * | 2014-11-12 | 2017-08-22 | Micron Technology, Inc. | Apparatuses and methods to perform post package trim |
US20170062023A1 (en) * | 2015-08-26 | 2017-03-02 | Intel Corporation | Systems and methods to rejuvenate nonvolatile memory using timestamps |
US10282224B2 (en) * | 2015-09-22 | 2019-05-07 | Qualcomm Incorporated | Dynamic register virtualization |
US10423783B2 (en) * | 2016-12-19 | 2019-09-24 | Intel Corporation | Methods and apparatus to recover a processor state during a system failure or security event |
-
2017
- 2017-12-28 US US15/857,054 patent/US10649656B2/en active Active
-
2018
- 2018-12-14 WO PCT/US2018/065769 patent/WO2019133300A1/en unknown
- 2018-12-14 SG SG11202005903SA patent/SG11202005903SA/en unknown
- 2018-12-14 JP JP2020535238A patent/JP7219281B2/en active Active
- 2018-12-14 CN CN201880083469.2A patent/CN111566739B/en active Active
- 2018-12-14 EP EP18895115.6A patent/EP3732687B1/en active Active
- 2018-12-14 KR KR1020207020702A patent/KR102371450B1/en active IP Right Grant
- 2018-12-22 TW TW107146585A patent/TWI685844B/en active
-
2020
- 2020-04-14 US US16/848,608 patent/US11194472B2/en active Active
-
2021
- 2021-11-03 US US17/518,154 patent/US11928330B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2021509216A (en) | 2021-03-18 |
WO2019133300A1 (en) | 2019-07-04 |
EP3732687A4 (en) | 2021-11-10 |
CN111566739A (en) | 2020-08-21 |
US20200241751A1 (en) | 2020-07-30 |
KR20200089768A (en) | 2020-07-27 |
US11194472B2 (en) | 2021-12-07 |
EP3732687A1 (en) | 2020-11-04 |
US20190205030A1 (en) | 2019-07-04 |
US20220057939A1 (en) | 2022-02-24 |
CN111566739B (en) | 2023-11-14 |
TW201933360A (en) | 2019-08-16 |
US11928330B2 (en) | 2024-03-12 |
EP3732687B1 (en) | 2024-01-31 |
TWI685844B (en) | 2020-02-21 |
US10649656B2 (en) | 2020-05-12 |
KR102371450B1 (en) | 2022-03-07 |
JP7219281B2 (en) | 2023-02-07 |
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