SG11202004855YA - Method for producing a planar polymer stack - Google Patents
Method for producing a planar polymer stackInfo
- Publication number
- SG11202004855YA SG11202004855YA SG11202004855YA SG11202004855YA SG11202004855YA SG 11202004855Y A SG11202004855Y A SG 11202004855YA SG 11202004855Y A SG11202004855Y A SG 11202004855YA SG 11202004855Y A SG11202004855Y A SG 11202004855YA SG 11202004855Y A SG11202004855Y A SG 11202004855YA
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- polymer stack
- planar polymer
- planar
- stack
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1761179A FR3074180B1 (en) | 2017-11-24 | 2017-11-24 | METHOD OF CHECKING THE FLATNESS OF A POLYMERIC STACK |
PCT/FR2018/052962 WO2019102158A1 (en) | 2017-11-24 | 2018-11-23 | Method for producing a planar polymer stack |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202004855YA true SG11202004855YA (en) | 2020-06-29 |
Family
ID=61003216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202004855YA SG11202004855YA (en) | 2017-11-24 | 2018-11-23 | Method for producing a planar polymer stack |
Country Status (9)
Country | Link |
---|---|
US (1) | US20200371437A1 (en) |
EP (1) | EP3714327A1 (en) |
JP (1) | JP2021504114A (en) |
KR (1) | KR20200088881A (en) |
CN (1) | CN111615665B (en) |
FR (1) | FR3074180B1 (en) |
SG (1) | SG11202004855YA (en) |
TW (1) | TWI794316B (en) |
WO (1) | WO2019102158A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3096281A1 (en) * | 2019-05-20 | 2020-11-27 | Université De Bordeaux | process for preparing a block copolymer film for creating a nanolithography mask |
FR3105755A1 (en) | 2019-12-31 | 2021-07-02 | Arkema France | Method of manufacturing an etching stop layer for nanolithography by directed self-assembly |
FR3105793B1 (en) | 2019-12-31 | 2023-11-17 | Arkema France | PREPOLYMER COMPOSITION INTENDED TO FORM A CONTRAST LAYER AND METHOD FOR STRUCTURING AN INTERFACE MATERIAL |
FR3105786A1 (en) | 2019-12-31 | 2021-07-02 | Arkema France | Process for nanostructuring a substrate |
FR3110716B1 (en) * | 2020-05-19 | 2022-04-29 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING MOLDS FOR LITHOGRAPHY BY NANO-IMPRESSION |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4665123A (en) * | 1985-12-13 | 1987-05-12 | Ciba-Geigy Corporation | Polyvinyl alcohol derivatives containing pendant (meth)acryloylvinylic monomer reaction product units bound through urethane groups and hydrogel contact lenses made therefrom |
JP2726348B2 (en) * | 1992-02-03 | 1998-03-11 | 沖電気工業株式会社 | Radiation-sensitive resin composition |
US6258514B1 (en) * | 1999-03-10 | 2001-07-10 | Lsi Logic Corporation | Top surface imaging technique using a topcoat delivery system |
US6165682A (en) * | 1999-09-22 | 2000-12-26 | Arch Specialty Chemicals, Inc. | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof |
JP4139575B2 (en) * | 2001-04-13 | 2008-08-27 | 富士フイルム株式会社 | Lower layer resist composition for silicon-containing two-layer resist |
WO2004074935A1 (en) * | 2003-02-13 | 2004-09-02 | The Trustees Of Columbia University In The City Of New York | Micropatterning of molecular surfaces via selective irradiation |
US7803516B2 (en) * | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US8435719B2 (en) * | 2006-08-08 | 2013-05-07 | International Business Machines Corporation | Tunable contact angle process for immersionlithography topcoats and photoresists |
JP5719514B2 (en) * | 2009-02-08 | 2015-05-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Coating compositions suitable for use with overcoated photoresist |
US9122159B2 (en) * | 2011-04-14 | 2015-09-01 | Rohm And Haas Electronic Materials Llc | Compositions and processes for photolithography |
US9314819B2 (en) * | 2012-02-10 | 2016-04-19 | Board Of Regents, The University Of Texas System | Anhydride copolymer top coats for orientation control of thin film block copolymers |
US9157008B2 (en) | 2012-02-10 | 2015-10-13 | Board Of Regents, The University Of Texas System | Anhydride copolymer top coats for orientation control of thin film block copolymers |
JP6027912B2 (en) * | 2013-02-22 | 2016-11-16 | 東京応化工業株式会社 | Method of manufacturing structure including phase separation structure, pattern forming method, and topcoat material |
US8980538B2 (en) * | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
US9802400B2 (en) * | 2013-06-24 | 2017-10-31 | Dow Global Technologies Llc | Orientation control layer formed on a free top surface of a first block copolymer from a mixture of first and second block copolymers |
FR3010412B1 (en) * | 2013-09-09 | 2016-10-21 | Arkema France | PROCESS FOR OBTAINING NANO-STRUCTURE THICK FILMS OBTAINED FROM BLOCK COPOLYMERS |
JP6249714B2 (en) * | 2013-10-25 | 2017-12-20 | 東京応化工業株式会社 | Method for producing structure including phase separation structure |
TWI648320B (en) * | 2014-01-23 | 2019-01-21 | 東京應化工業股份有限公司 | Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern |
JP6650879B2 (en) * | 2014-03-15 | 2020-02-19 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | Ordering of block copolymer |
JP6298691B2 (en) * | 2014-04-09 | 2018-03-20 | 東京応化工業株式会社 | Method for manufacturing structure including phase separation structure and method for forming topcoat film |
US9740099B2 (en) * | 2014-11-12 | 2017-08-22 | Macdermid Printing Solutions, Llc | Flexographic printing plate with improved cure efficiency |
JP6404757B2 (en) * | 2015-03-27 | 2018-10-17 | 信越化学工業株式会社 | Polymer for resist underlayer film material, resist underlayer film material, and pattern forming method |
FR3037070B1 (en) | 2015-06-02 | 2019-05-31 | Arkema France | METHOD FOR CONTROLLING SURFACE ENERGY AT THE INTERFACE BETWEEN A BLOCK COPOLYMER AND ANOTHER COMPOUND |
FR3037071B1 (en) | 2015-06-02 | 2019-06-21 | Arkema France | METHOD FOR REDUCING THE DEFECTIVITY OF A BLOCK COPOLYMER FILM |
JP6653330B2 (en) * | 2015-09-30 | 2020-02-26 | 富士フイルム株式会社 | Pattern forming method, electronic device manufacturing method, and laminate |
-
2017
- 2017-11-24 FR FR1761179A patent/FR3074180B1/en active Active
-
2018
- 2018-10-30 TW TW107138305A patent/TWI794316B/en active
- 2018-11-23 WO PCT/FR2018/052962 patent/WO2019102158A1/en unknown
- 2018-11-23 JP JP2020528380A patent/JP2021504114A/en active Pending
- 2018-11-23 US US16/766,490 patent/US20200371437A1/en active Pending
- 2018-11-23 KR KR1020207018082A patent/KR20200088881A/en not_active Application Discontinuation
- 2018-11-23 EP EP18826414.7A patent/EP3714327A1/en active Pending
- 2018-11-23 CN CN201880086963.4A patent/CN111615665B/en active Active
- 2018-11-23 SG SG11202004855YA patent/SG11202004855YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI794316B (en) | 2023-03-01 |
JP2021504114A (en) | 2021-02-15 |
US20200371437A1 (en) | 2020-11-26 |
EP3714327A1 (en) | 2020-09-30 |
FR3074180A1 (en) | 2019-05-31 |
TW202004335A (en) | 2020-01-16 |
CN111615665A (en) | 2020-09-01 |
CN111615665B (en) | 2023-12-05 |
KR20200088881A (en) | 2020-07-23 |
WO2019102158A1 (en) | 2019-05-31 |
FR3074180B1 (en) | 2021-01-01 |
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