SG11202003812XA - Method for manufacturing a film on a flexible sheet - Google Patents
Method for manufacturing a film on a flexible sheetInfo
- Publication number
- SG11202003812XA SG11202003812XA SG11202003812XA SG11202003812XA SG11202003812XA SG 11202003812X A SG11202003812X A SG 11202003812XA SG 11202003812X A SG11202003812X A SG 11202003812XA SG 11202003812X A SG11202003812X A SG 11202003812XA SG 11202003812X A SG11202003812X A SG 11202003812XA
- Authority
- SG
- Singapore
- Prior art keywords
- film
- manufacturing
- flexible sheet
- flexible
- sheet
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1760272A FR3073083B1 (en) | 2017-10-31 | 2017-10-31 | METHOD FOR MANUFACTURING A FILM ON A FLEXIBLE SHEET |
PCT/EP2018/079796 WO2019086503A1 (en) | 2017-10-31 | 2018-10-31 | Method for manufacturing a film on a flexible sheet |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202003812XA true SG11202003812XA (en) | 2020-05-28 |
Family
ID=61224010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202003812XA SG11202003812XA (en) | 2017-10-31 | 2018-10-31 | Method for manufacturing a film on a flexible sheet |
Country Status (9)
Country | Link |
---|---|
US (2) | US11557715B2 (en) |
EP (1) | EP3704735B1 (en) |
JP (1) | JP7170720B2 (en) |
KR (1) | KR102523181B1 (en) |
CN (1) | CN111295744A (en) |
FR (1) | FR3073083B1 (en) |
SG (1) | SG11202003812XA (en) |
TW (1) | TWI811258B (en) |
WO (1) | WO2019086503A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3077923B1 (en) * | 2018-02-12 | 2021-07-16 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATION BY LAYER TRANSFER |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2756847B1 (en) * | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | METHOD FOR SEPARATING AT LEAST TWO ELEMENTS OF A STRUCTURE IN CONTACT WITH THEM BY ION IMPLANTATION |
CA2225131C (en) * | 1996-12-18 | 2002-01-01 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
US6346458B1 (en) * | 1998-12-31 | 2002-02-12 | Robert W. Bower | Transposed split of ion cut materials |
US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
US6562127B1 (en) | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
FR2835097B1 (en) * | 2002-01-23 | 2005-10-14 | OPTIMIZED METHOD FOR DEFERRING A THIN LAYER OF SILICON CARBIDE ON A RECEPTACLE SUBSTRATE | |
FR2845518B1 (en) * | 2002-10-07 | 2005-10-14 | Commissariat Energie Atomique | IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT |
JP5089033B2 (en) * | 2005-11-04 | 2012-12-05 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US7803690B2 (en) * | 2006-06-23 | 2010-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Epitaxy silicon on insulator (ESOI) |
FR2951581B1 (en) * | 2009-10-19 | 2011-12-16 | Ecole Polytech | METHOD FOR MANUFACTURING A MULTILAYER FILM COMPRISING AT LEAST ONE ULTRA-THIN LAYER OF CRYSTALLINE SILICON AND DEVICES OBTAINED THEREBY |
FR2964048B1 (en) | 2010-08-30 | 2012-09-21 | Commissariat Energie Atomique | METHOD FOR PRODUCING A FILM, FOR EXAMPLE MONOCRYSTALLINE, ON A POLYMER SUPPORT |
KR101295532B1 (en) * | 2010-11-11 | 2013-08-12 | 엘지디스플레이 주식회사 | Method for manufacturing Flexible Flat Device |
JP5839538B2 (en) | 2011-03-17 | 2016-01-06 | リンテック株式会社 | Manufacturing method of thin semiconductor device |
TWI573198B (en) * | 2011-09-27 | 2017-03-01 | 索泰克公司 | Methods of transferring layers of material in 3d integration processes and related structures and devices |
FR2984597B1 (en) * | 2011-12-20 | 2016-07-29 | Commissariat Energie Atomique | FABRICATION OF A SOFT STRUCTURE BY LAYER TRANSFER |
FR3041364B1 (en) | 2015-09-18 | 2017-10-06 | Soitec Silicon On Insulator | PROCESS FOR TRANSFERRING SINGLE CRYSTAL PAVES |
FR3045677B1 (en) | 2015-12-22 | 2019-07-19 | Soitec | PROCESS FOR PRODUCING A MONOCRYSTALLINE LAYER, IN PARTICULAR PIEZOELECTRIC |
-
2017
- 2017-10-31 FR FR1760272A patent/FR3073083B1/en active Active
-
2018
- 2018-10-31 WO PCT/EP2018/079796 patent/WO2019086503A1/en unknown
- 2018-10-31 US US16/759,992 patent/US11557715B2/en active Active
- 2018-10-31 EP EP18795627.1A patent/EP3704735B1/en active Active
- 2018-10-31 JP JP2020523984A patent/JP7170720B2/en active Active
- 2018-10-31 TW TW107138588A patent/TWI811258B/en active
- 2018-10-31 CN CN201880071196.XA patent/CN111295744A/en active Pending
- 2018-10-31 SG SG11202003812XA patent/SG11202003812XA/en unknown
- 2018-10-31 KR KR1020207015331A patent/KR102523181B1/en active IP Right Grant
-
2022
- 2022-10-25 US US18/049,529 patent/US20230075685A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2019086503A1 (en) | 2019-05-09 |
US20230075685A1 (en) | 2023-03-09 |
CN111295744A (en) | 2020-06-16 |
EP3704735B1 (en) | 2021-12-01 |
JP2021501475A (en) | 2021-01-14 |
KR102523181B1 (en) | 2023-04-18 |
JP7170720B2 (en) | 2022-11-14 |
KR20200076725A (en) | 2020-06-29 |
EP3704735A1 (en) | 2020-09-09 |
US11557715B2 (en) | 2023-01-17 |
TWI811258B (en) | 2023-08-11 |
FR3073083A1 (en) | 2019-05-03 |
TW201924945A (en) | 2019-07-01 |
FR3073083B1 (en) | 2019-10-11 |
US20200343441A1 (en) | 2020-10-29 |
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