SG11202000611YA - Inspection-guided critical site selection for critical dimension measurement - Google Patents
Inspection-guided critical site selection for critical dimension measurementInfo
- Publication number
- SG11202000611YA SG11202000611YA SG11202000611YA SG11202000611YA SG11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA
- Authority
- SG
- Singapore
- Prior art keywords
- critical
- inspection
- guided
- site selection
- dimension measurement
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
- G01R31/2836—Fault-finding or characterising
- G01R31/2846—Fault-finding or characterising using hard- or software simulation or using knowledge-based systems, e.g. expert systems, artificial intelligence or interactive algorithms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2894—Aspects of quality control [QC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Mathematical Physics (AREA)
- Computational Linguistics (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computing Systems (AREA)
- Biophysics (AREA)
- Data Mining & Analysis (AREA)
- Software Systems (AREA)
- Biomedical Technology (AREA)
- Medical Informatics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201741027957 | 2017-08-07 | ||
US201762559820P | 2017-09-18 | 2017-09-18 | |
US15/904,402 US11035666B2 (en) | 2017-08-07 | 2018-02-25 | Inspection-guided critical site selection for critical dimension measurement |
PCT/US2018/045303 WO2019032413A1 (en) | 2017-08-07 | 2018-08-06 | Inspection-guided critical site selection for critical dimension measurement |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202000611YA true SG11202000611YA (en) | 2020-02-27 |
Family
ID=67702071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202000611YA SG11202000611YA (en) | 2017-08-07 | 2018-08-06 | Inspection-guided critical site selection for critical dimension measurement |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3635774B1 (en) |
JP (1) | JP7236435B2 (en) |
KR (1) | KR102589615B1 (en) |
CN (1) | CN111052326B (en) |
IL (1) | IL272161B2 (en) |
SG (1) | SG11202000611YA (en) |
TW (1) | TWI768092B (en) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6452677B1 (en) * | 1998-02-13 | 2002-09-17 | Micron Technology Inc. | Method and apparatus for detecting defects in the manufacture of an electronic device |
WO2000035002A1 (en) | 1998-12-04 | 2000-06-15 | Semiconductor 300 Gmbh & Co. Kg | Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors |
JP2002033365A (en) | 2000-07-14 | 2002-01-31 | Seiko Instruments Inc | Method and device for observing wafer pattern |
US7080330B1 (en) * | 2003-03-05 | 2006-07-18 | Advanced Micro Devices, Inc. | Concurrent measurement of critical dimension and overlay in semiconductor manufacturing |
US7135344B2 (en) * | 2003-07-11 | 2006-11-14 | Applied Materials, Israel, Ltd. | Design-based monitoring |
US7596420B2 (en) | 2006-06-19 | 2009-09-29 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
US7571074B2 (en) * | 2007-01-30 | 2009-08-04 | Tokyo Electron Limited | Method of using a wafer-thickness-dependant profile library |
WO2008096211A2 (en) * | 2007-02-08 | 2008-08-14 | Freescale Semiconductor, Inc. | Measurement of critical dimensions of semiconductor wafers |
JP5065943B2 (en) | 2008-02-29 | 2012-11-07 | 株式会社日立ハイテクノロジーズ | Manufacturing process monitoring system |
JP5380933B2 (en) * | 2008-07-17 | 2014-01-08 | 富士通株式会社 | MONITOR POSITION DETERMINING DEVICE AND MONITOR POSITION DETERMINING METHOD |
JP5286337B2 (en) | 2010-08-30 | 2013-09-11 | 株式会社日立ハイテクノロジーズ | Semiconductor manufacturing apparatus management apparatus and computer program |
US20140019927A1 (en) * | 2012-07-10 | 2014-01-16 | Globalfoundries Singapore Pte. Ltd. | Waferless measurement recipe |
US9746849B2 (en) * | 2012-11-09 | 2017-08-29 | Tokyo Electron Limited | Method and apparatus for autonomous tool parameter impact identification system for semiconductor manufacturing |
US9098891B2 (en) * | 2013-04-08 | 2015-08-04 | Kla-Tencor Corp. | Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology |
-
2018
- 2018-08-03 TW TW107126998A patent/TWI768092B/en active
- 2018-08-06 SG SG11202000611YA patent/SG11202000611YA/en unknown
- 2018-08-06 KR KR1020207006341A patent/KR102589615B1/en active IP Right Grant
- 2018-08-06 JP JP2020506747A patent/JP7236435B2/en active Active
- 2018-08-06 EP EP18844310.5A patent/EP3635774B1/en active Active
- 2018-08-06 CN CN201880051294.7A patent/CN111052326B/en active Active
-
2020
- 2020-01-21 IL IL272161A patent/IL272161B2/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20200029601A (en) | 2020-03-18 |
EP3635774B1 (en) | 2023-07-19 |
IL272161B2 (en) | 2023-08-01 |
JP7236435B2 (en) | 2023-03-09 |
IL272161A (en) | 2020-03-31 |
CN111052326B (en) | 2023-10-31 |
EP3635774A1 (en) | 2020-04-15 |
TW201921538A (en) | 2019-06-01 |
EP3635774A4 (en) | 2021-03-17 |
CN111052326A (en) | 2020-04-21 |
TWI768092B (en) | 2022-06-21 |
IL272161B1 (en) | 2023-04-01 |
JP2020530205A (en) | 2020-10-15 |
KR102589615B1 (en) | 2023-10-13 |
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