SG11202000611YA - Inspection-guided critical site selection for critical dimension measurement - Google Patents

Inspection-guided critical site selection for critical dimension measurement

Info

Publication number
SG11202000611YA
SG11202000611YA SG11202000611YA SG11202000611YA SG11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA SG 11202000611Y A SG11202000611Y A SG 11202000611YA
Authority
SG
Singapore
Prior art keywords
critical
inspection
guided
site selection
dimension measurement
Prior art date
Application number
SG11202000611YA
Inventor
Jagdish Chandra Saraswatula
Arpit Yati
Hari Sriraman Pathangi
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/904,402 external-priority patent/US11035666B2/en
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11202000611YA publication Critical patent/SG11202000611YA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/20Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836Fault-finding or characterising
    • G01R31/2846Fault-finding or characterising using hard- or software simulation or using knowledge-based systems, e.g. expert systems, artificial intelligence or interactive algorithms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2894Aspects of quality control [QC]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00Computing arrangements based on biological models
    • G06N3/02Neural networks
    • G06N3/04Architecture, e.g. interconnection topology
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00Computing arrangements based on biological models
    • G06N3/02Neural networks
    • G06N3/08Learning methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Mathematical Physics (AREA)
  • Computational Linguistics (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computing Systems (AREA)
  • Biophysics (AREA)
  • Data Mining & Analysis (AREA)
  • Software Systems (AREA)
  • Biomedical Technology (AREA)
  • Medical Informatics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
SG11202000611YA 2017-08-07 2018-08-06 Inspection-guided critical site selection for critical dimension measurement SG11202000611YA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN201741027957 2017-08-07
US201762559820P 2017-09-18 2017-09-18
US15/904,402 US11035666B2 (en) 2017-08-07 2018-02-25 Inspection-guided critical site selection for critical dimension measurement
PCT/US2018/045303 WO2019032413A1 (en) 2017-08-07 2018-08-06 Inspection-guided critical site selection for critical dimension measurement

Publications (1)

Publication Number Publication Date
SG11202000611YA true SG11202000611YA (en) 2020-02-27

Family

ID=67702071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000611YA SG11202000611YA (en) 2017-08-07 2018-08-06 Inspection-guided critical site selection for critical dimension measurement

Country Status (7)

Country Link
EP (1) EP3635774B1 (en)
JP (1) JP7236435B2 (en)
KR (1) KR102589615B1 (en)
CN (1) CN111052326B (en)
IL (1) IL272161B2 (en)
SG (1) SG11202000611YA (en)
TW (1) TWI768092B (en)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452677B1 (en) * 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
WO2000035002A1 (en) 1998-12-04 2000-06-15 Semiconductor 300 Gmbh & Co. Kg Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors
JP2002033365A (en) 2000-07-14 2002-01-31 Seiko Instruments Inc Method and device for observing wafer pattern
US7080330B1 (en) * 2003-03-05 2006-07-18 Advanced Micro Devices, Inc. Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
US7135344B2 (en) * 2003-07-11 2006-11-14 Applied Materials, Israel, Ltd. Design-based monitoring
US7596420B2 (en) 2006-06-19 2009-09-29 Asml Netherlands B.V. Device manufacturing method and computer program product
US7571074B2 (en) * 2007-01-30 2009-08-04 Tokyo Electron Limited Method of using a wafer-thickness-dependant profile library
WO2008096211A2 (en) * 2007-02-08 2008-08-14 Freescale Semiconductor, Inc. Measurement of critical dimensions of semiconductor wafers
JP5065943B2 (en) 2008-02-29 2012-11-07 株式会社日立ハイテクノロジーズ Manufacturing process monitoring system
JP5380933B2 (en) * 2008-07-17 2014-01-08 富士通株式会社 MONITOR POSITION DETERMINING DEVICE AND MONITOR POSITION DETERMINING METHOD
JP5286337B2 (en) 2010-08-30 2013-09-11 株式会社日立ハイテクノロジーズ Semiconductor manufacturing apparatus management apparatus and computer program
US20140019927A1 (en) * 2012-07-10 2014-01-16 Globalfoundries Singapore Pte. Ltd. Waferless measurement recipe
US9746849B2 (en) * 2012-11-09 2017-08-29 Tokyo Electron Limited Method and apparatus for autonomous tool parameter impact identification system for semiconductor manufacturing
US9098891B2 (en) * 2013-04-08 2015-08-04 Kla-Tencor Corp. Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology

Also Published As

Publication number Publication date
KR20200029601A (en) 2020-03-18
EP3635774B1 (en) 2023-07-19
IL272161B2 (en) 2023-08-01
JP7236435B2 (en) 2023-03-09
IL272161A (en) 2020-03-31
CN111052326B (en) 2023-10-31
EP3635774A1 (en) 2020-04-15
TW201921538A (en) 2019-06-01
EP3635774A4 (en) 2021-03-17
CN111052326A (en) 2020-04-21
TWI768092B (en) 2022-06-21
IL272161B1 (en) 2023-04-01
JP2020530205A (en) 2020-10-15
KR102589615B1 (en) 2023-10-13

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