SG11202000190XA - Cathode assembly having a dual position magnetron and centrally fed coolant - Google Patents

Cathode assembly having a dual position magnetron and centrally fed coolant

Info

Publication number
SG11202000190XA
SG11202000190XA SG11202000190XA SG11202000190XA SG11202000190XA SG 11202000190X A SG11202000190X A SG 11202000190XA SG 11202000190X A SG11202000190X A SG 11202000190XA SG 11202000190X A SG11202000190X A SG 11202000190XA SG 11202000190X A SG11202000190X A SG 11202000190XA
Authority
SG
Singapore
Prior art keywords
cathode assembly
dual position
centrally fed
fed coolant
position magnetron
Prior art date
Application number
SG11202000190XA
Inventor
Irena H Wysok
Kirankumar Savandaiah
Chan Anthony Chih-Tung
Jiao Song
Prashant Prabhu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202000190XA publication Critical patent/SG11202000190XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11202000190XA 2017-07-17 2018-07-16 Cathode assembly having a dual position magnetron and centrally fed coolant SG11202000190XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/651,791 US11189472B2 (en) 2017-07-17 2017-07-17 Cathode assembly having a dual position magnetron and centrally fed coolant
PCT/US2018/042280 WO2019018283A1 (en) 2017-07-17 2018-07-16 Cathode assembly having a dual position magnetron and centrally fed coolant

Publications (1)

Publication Number Publication Date
SG11202000190XA true SG11202000190XA (en) 2020-02-27

Family

ID=64999200

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000190XA SG11202000190XA (en) 2017-07-17 2018-07-16 Cathode assembly having a dual position magnetron and centrally fed coolant

Country Status (8)

Country Link
US (1) US11189472B2 (en)
EP (1) EP3655986B1 (en)
JP (1) JP7354090B2 (en)
KR (1) KR102605911B1 (en)
CN (1) CN111033683B (en)
SG (1) SG11202000190XA (en)
TW (1) TWI795420B (en)
WO (1) WO2019018283A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11024490B2 (en) 2017-12-11 2021-06-01 Applied Materials, Inc. Magnetron having enhanced target cooling configuration
US11469080B1 (en) 2021-05-24 2022-10-11 Applied Materials, Inc. Magnetron assembly having coolant guide for enhanced target cooling

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2627008B1 (en) 1988-02-05 1990-06-08 Europ Composants Electron METHOD FOR IMPREGNATING ELECTROLYTIC CAPACITORS WITH TETRACYANOQUINODIMETHANE SALTS
JPH02175866A (en) * 1988-12-27 1990-07-09 Mitsumi Electric Co Ltd Method and device for producing thin film
JPH10251849A (en) 1997-03-07 1998-09-22 Tadahiro Omi Sputtering device
US6641701B1 (en) 2000-06-14 2003-11-04 Applied Materials, Inc. Cooling system for magnetron sputtering apparatus
DE10039943A1 (en) * 2000-08-16 2002-02-28 Adc Automotive Dist Control Method for operating a radar system
WO2002047110A1 (en) 2000-12-05 2002-06-13 Trikon Holdings Limited Magnetron sputtering apparatus
ES2248581T3 (en) * 2001-03-12 2006-03-16 Intercept Pharmaceuticals, Inc. STEROIDS AS FXR AGONISTS.
JP2003147522A (en) * 2001-11-13 2003-05-21 Seiko Epson Corp Magnetron sputtering device
US7392880B2 (en) * 2002-04-02 2008-07-01 Gibson Guitar Corp. Dual range horn with acoustic crossover
US6852202B2 (en) 2002-05-21 2005-02-08 Applied Materials, Inc. Small epicyclic magnetron with controlled radial sputtering profile
US6928095B2 (en) * 2003-07-18 2005-08-09 Eastman Kodak Company Organic vertical cavity laser array device with varying pixel sizes
US20050133361A1 (en) * 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
US7018515B2 (en) 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
JP4994220B2 (en) * 2005-02-08 2012-08-08 東北精機工業株式会社 Sputtering equipment
US8021527B2 (en) * 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US20100024340A1 (en) * 2006-03-03 2010-02-04 Block Shields Llc Wind blocking device for buildings
CN101506446A (en) * 2006-08-24 2009-08-12 冈部株式会社 Tool for joining reinforcing bars
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP2012140648A (en) * 2010-12-28 2012-07-26 Canon Anelva Corp Sputtering apparatus and sputtering method thereof
US9096927B2 (en) 2011-09-02 2015-08-04 Applied Materials, Inc. Cooling ring for physical vapor deposition chamber target
US9093252B2 (en) * 2012-02-16 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Rotation plus vibration magnet for magnetron sputtering apparatus
US20140061039A1 (en) 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
US9249500B2 (en) * 2013-02-07 2016-02-02 Applied Materials, Inc. PVD RF DC open/closed loop selectable magnetron
US9812303B2 (en) * 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron

Also Published As

Publication number Publication date
EP3655986A1 (en) 2020-05-27
EP3655986B1 (en) 2023-05-03
TW201908505A (en) 2019-03-01
CN111033683A (en) 2020-04-17
CN111033683B (en) 2023-04-18
EP3655986A4 (en) 2021-04-14
JP7354090B2 (en) 2023-10-02
US20190019658A1 (en) 2019-01-17
WO2019018283A1 (en) 2019-01-24
US11189472B2 (en) 2021-11-30
JP2020527652A (en) 2020-09-10
KR20200020962A (en) 2020-02-26
KR102605911B1 (en) 2023-11-23
TWI795420B (en) 2023-03-11

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