SG11201911166PA - High power compound semiconductor field effect transistor devices with low doped drain - Google Patents
High power compound semiconductor field effect transistor devices with low doped drainInfo
- Publication number
- SG11201911166PA SG11201911166PA SG11201911166PA SG11201911166PA SG11201911166PA SG 11201911166P A SG11201911166P A SG 11201911166PA SG 11201911166P A SG11201911166P A SG 11201911166PA SG 11201911166P A SG11201911166P A SG 11201911166PA SG 11201911166P A SG11201911166P A SG 11201911166PA
- Authority
- SG
- Singapore
- Prior art keywords
- field effect
- effect transistor
- high power
- compound semiconductor
- semiconductor field
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/746—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts for AIII-BV integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/171—A filter circuit coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/02—Terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/645,188 US10756206B2 (en) | 2017-07-10 | 2017-07-10 | High power compound semiconductor field effect transistor devices with low doped drain |
PCT/US2018/034155 WO2019013873A1 (en) | 2017-07-10 | 2018-05-23 | High power compound semiconductor field effect transistor devices with low doped drain |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201911166PA true SG11201911166PA (en) | 2020-01-30 |
Family
ID=63667997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201911166PA SG11201911166PA (en) | 2017-07-10 | 2018-05-23 | High power compound semiconductor field effect transistor devices with low doped drain |
Country Status (7)
Country | Link |
---|---|
US (1) | US10756206B2 (en) |
EP (1) | EP3652787A1 (en) |
KR (1) | KR102205010B1 (en) |
CN (1) | CN110870076A (en) |
SG (1) | SG11201911166PA (en) |
TW (1) | TWI721273B (en) |
WO (1) | WO2019013873A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113437149B (en) * | 2020-03-23 | 2023-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
TWI768413B (en) * | 2020-07-24 | 2022-06-21 | 世界先進積體電路股份有限公司 | Semiconductor device and operation circuit |
US11569224B2 (en) * | 2020-12-14 | 2023-01-31 | Vanguard International Semiconductor Corporation | Semiconductor device and operation circuit |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100261461B1 (en) * | 1997-12-19 | 2000-07-01 | 정선종 | Method of making compound semiconductor device with asymmetry recess structure |
US6144048A (en) | 1998-01-13 | 2000-11-07 | Nippon Telegraph And Telephone Corporation | Heterojunction field effect transistor and method of fabricating the same |
GB0413277D0 (en) * | 2004-06-15 | 2004-07-14 | Filtronic Plc | Pseudomorphic hemt structure compound semiconductor substrate and process for forming a recess therein |
US7229903B2 (en) | 2004-08-25 | 2007-06-12 | Freescale Semiconductor, Inc. | Recessed semiconductor device |
WO2007016666A2 (en) * | 2005-08-02 | 2007-02-08 | Little Giant Pump Company | Condensate removal apparatus and method |
US7902571B2 (en) * | 2005-08-04 | 2011-03-08 | Hitachi Cable, Ltd. | III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal |
US20080054300A1 (en) * | 2006-06-30 | 2008-03-06 | Philip Gene Nikkel | Body contact structure and method for the reduction of drain lag and gate lag in field effect transistors |
JP4691060B2 (en) | 2007-03-23 | 2011-06-01 | 古河電気工業株式会社 | GaN-based semiconductor devices |
JP2010135590A (en) | 2008-12-05 | 2010-06-17 | Renesas Electronics Corp | Field-effect transistor |
US8936976B2 (en) | 2009-12-23 | 2015-01-20 | Intel Corporation | Conductivity improvements for III-V semiconductor devices |
US8860120B2 (en) * | 2010-09-22 | 2014-10-14 | Nxp, B.V. | Field modulating plate and circuit |
KR101720589B1 (en) | 2010-10-11 | 2017-03-30 | 삼성전자주식회사 | E-mode High Electron Mobility Transistor and method of manufacturing the same |
CN102130158B (en) * | 2011-01-05 | 2012-07-25 | 西安电子科技大学 | Step-like groove-grid high electron mobility transistor |
US8288260B1 (en) | 2011-06-30 | 2012-10-16 | M/A-Com Technology Solutions Holdings, Inc. | Field effect transistor with dual etch-stop layers for improved power, performance and reproducibility |
TWI481025B (en) | 2011-09-30 | 2015-04-11 | Win Semiconductors Corp | An improved structure of a high electron mobility transistor and a fabrication method thereof |
US10271448B2 (en) * | 2012-08-06 | 2019-04-23 | Investar Corporation | Thin leadframe QFN package design of RF front-ends for mobile wireless communication |
US20150263116A1 (en) | 2014-03-14 | 2015-09-17 | Chunong Qiu | High electron mobility transistors with improved gates and reduced surface traps |
FR3030114B1 (en) | 2014-12-15 | 2018-01-26 | Centre National De La Recherche Scientifique - Cnrs - | TRANSISTOR HEMT |
JP2016207818A (en) | 2015-04-21 | 2016-12-08 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
US20170033187A1 (en) | 2015-07-31 | 2017-02-02 | Ohio State Innovation Foundation | Enhancement mode field effect transistor with doped buffer and drain field plate |
-
2017
- 2017-07-10 US US15/645,188 patent/US10756206B2/en active Active
-
2018
- 2018-05-23 EP EP18773673.1A patent/EP3652787A1/en active Pending
- 2018-05-23 KR KR1020207000268A patent/KR102205010B1/en active IP Right Grant
- 2018-05-23 WO PCT/US2018/034155 patent/WO2019013873A1/en unknown
- 2018-05-23 SG SG11201911166PA patent/SG11201911166PA/en unknown
- 2018-05-23 CN CN201880045584.0A patent/CN110870076A/en active Pending
- 2018-05-25 TW TW107117844A patent/TWI721273B/en active
Also Published As
Publication number | Publication date |
---|---|
CN110870076A (en) | 2020-03-06 |
TW201917886A (en) | 2019-05-01 |
TWI721273B (en) | 2021-03-11 |
KR20200019671A (en) | 2020-02-24 |
BR112020000012A2 (en) | 2020-07-21 |
US10756206B2 (en) | 2020-08-25 |
WO2019013873A1 (en) | 2019-01-17 |
US20190013398A1 (en) | 2019-01-10 |
EP3652787A1 (en) | 2020-05-20 |
KR102205010B1 (en) | 2021-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2564482B (en) | A power semiconductor device with a double gate structure | |
EP2955758A4 (en) | Trench gate mos semiconductor device and method for manufacturing same | |
HK1201938A1 (en) | Ophthalmic devices with organic semiconductor transistors | |
EP3469628A4 (en) | Semiconductor device assembly with through-mold cooling channel | |
EP3089216A4 (en) | Split-gate power semiconductor field-effect transistor | |
GB201706061D0 (en) | GOA circuit based on oxide semiconductor thin-film transistor | |
EP2992559A4 (en) | Resurf iii-n high electron mobility transistor | |
EP3371831A4 (en) | Split-gate lateral extended drain mos transistor structure and process | |
HK1215469A1 (en) | Power semiconductor transistor with improved gate charge | |
EP2973723A4 (en) | Field effect transistor devices with protective regions | |
IL276793A (en) | Power semiconductor device with optimized field-plate design | |
EP3298628A4 (en) | Semiconductor devices with raised doped crystalline structures | |
EP2966701A4 (en) | Organic thin film, and organic semiconductor device and organic transistor using same | |
EP3065179A4 (en) | Group iii-v compound semiconductor nanowire, field effect transistor, and switching element | |
DE102015117994B8 (en) | Power semiconductor transistor with a fully depleted channel region | |
EP3692570A4 (en) | Leadframes in semiconductor devices | |
GB201805288D0 (en) | Power semiconductor device with a double gate structure | |
SG11201911166PA (en) | High power compound semiconductor field effect transistor devices with low doped drain | |
EP3361511A4 (en) | Laterally diffused metal-oxide semiconductor field-effect transistor | |
EP3619738A4 (en) | High power mmic devices having bypassed gate transistors | |
GB201321796D0 (en) | Source / Drain Conductors for transistor Devices | |
EP3183754A4 (en) | Super-junction metal oxide semiconductor field effect transistor | |
GB201509160D0 (en) | Bipolar power semiconductor transistor | |
EP3173436A4 (en) | Polymeric compound and organic semiconductor device including same | |
EP3857603A4 (en) | Super-junction semiconductor device fabrication |