SG11201807865UA - Process for the generation of thin inorganic films - Google Patents

Process for the generation of thin inorganic films

Info

Publication number
SG11201807865UA
SG11201807865UA SG11201807865UA SG11201807865UA SG11201807865UA SG 11201807865U A SG11201807865U A SG 11201807865UA SG 11201807865U A SG11201807865U A SG 11201807865UA SG 11201807865U A SG11201807865U A SG 11201807865UA SG 11201807865U A SG11201807865U A SG 11201807865UA
Authority
SG
Singapore
Prior art keywords
international
ludwigshafen
basf
pct
generation
Prior art date
Application number
SG11201807865UA
Inventor
Carolin Limburg
Daniel Loeffler
Hagen Wilmer
Marc Walter
Matthias Reiners
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201807865UA publication Critical patent/SG11201807865UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 1111101110101011111 Mt 0111010111111101110111011011111011 III International Bureau ..... ...... .Yld .?d ..... .......rj,„. (10) International Publication Number (43) International Publication Date WO 2017/178400 Al 19 October 2017(19.10.2017) WIPO I PCT (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C23C 16/455 (2006.01) COIF 15/04 (2006.01) kind of national protection available): AE, AG, AL, AM, C01G 51/00 (2006.01) CO7F 15/06 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, CO1G 53/00 (2006.01) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (21) International Application Number: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, PCT/EP2017/058488 KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (22) International Filing Date: MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, 10 April 2017 (10.04.2017) NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (25) Filing Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (26) Publication Language: English ZA, ZM, ZW. (30) Priority Data: (84) Designated States (unless otherwise indicated, for every 16165478.5 15 April 2016 (15.04.2016) EP kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, 67056 Ludwigshafen am Rhein (DE). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, (72) Inventors: LIMBURG, Carotin; Werderplatz 4, 68161 DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, Mannheim (DE). LOEFFLER, Daniel; Heinrich Heine LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Str. 2b, 67134 Birkenheide (DE). WILMER, Hagen; Ern- GW, KM, ML, MR, NE, SN, TD, TG). st-Kunz-Strasse 33, 67071 Ludwigshafen (DE). WAL- TER, Marc; Comeniusstr. 36, 38102 Braunschweig (DE). Published: REINERS, Matthias; Breite StraBe 18a, 38100 Braunsch- - with international search report (Art. 21(3)) weig (DE). (74) Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - C006, 67056 Ludwigshafen (DE). = (54) Title: PROCESS FOR THE GENERATION OF THIN ,—, (I) L= . 4 © © ii- oc IN ,-1 IN (57) : The present invention is in the field of processes 1-1 C the present invention relates to a process comprising bringing ei L.----M X. (I) and depositing the compound of general 0 wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a 6-donating ligand which coordinates M, phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3. II RR formula wherein R for a INORGANIC FILMS or R R the generation of thin compound of general (I) from the gaseous if present at least one formula X R 1 . 1 RR inorganic films on substrates. In particular, is or aerosol R (I) into the gaseous or aerosol state state onto a solid substrate, a ligand which coordinates M via a
SG11201807865UA 2016-04-15 2017-04-10 Process for the generation of thin inorganic films SG11201807865UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16165478 2016-04-15
PCT/EP2017/058488 WO2017178400A1 (en) 2016-04-15 2017-04-10 Process for the generation of thin inorganic films

Publications (1)

Publication Number Publication Date
SG11201807865UA true SG11201807865UA (en) 2018-10-30

Family

ID=55854574

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807865UA SG11201807865UA (en) 2016-04-15 2017-04-10 Process for the generation of thin inorganic films

Country Status (6)

Country Link
US (1) US20190144999A1 (en)
EP (1) EP3443140A1 (en)
CN (1) CN109072431A (en)
SG (1) SG11201807865UA (en)
TW (1) TW201807246A (en)
WO (1) WO2017178400A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3795714A1 (en) * 2019-09-17 2021-03-24 Basf Se Process for the generation of aluminum-containing films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US8372473B2 (en) 2007-05-21 2013-02-12 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cobalt precursors for semiconductor applications
AU2008278228A1 (en) 2007-07-16 2009-01-22 F. Hoffmann-La Roche Ag An anti-cancer cytotoxic monoclonal antibody
US20090205538A1 (en) * 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090203917A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof

Also Published As

Publication number Publication date
TW201807246A (en) 2018-03-01
US20190144999A1 (en) 2019-05-16
WO2017178400A1 (en) 2017-10-19
EP3443140A1 (en) 2019-02-20
CN109072431A (en) 2018-12-21

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