SG11201704920TA - Electronic device grade single crystal diamonds and method of producing the same - Google Patents

Electronic device grade single crystal diamonds and method of producing the same

Info

Publication number
SG11201704920TA
SG11201704920TA SG11201704920TA SG11201704920TA SG11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA
Authority
SG
Singapore
Prior art keywords
producing
electronic device
same
single crystal
crystal diamonds
Prior art date
Application number
SG11201704920TA
Inventor
Shanker Misra Devi
Tarun Alvarado
Original Assignee
Iia Tech Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SG10201500278YA external-priority patent/SG10201500278YA/en
Application filed by Iia Tech Pte Ltd filed Critical Iia Tech Pte Ltd
Publication of SG11201704920TA publication Critical patent/SG11201704920TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201704920TA 2015-01-14 2015-12-28 Electronic device grade single crystal diamonds and method of producing the same SG11201704920TA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG10201500278YA SG10201500278YA (en) 2015-01-14 2015-01-14 Electronic device grade diamonds and method of producing the same
SG10201505413VA SG10201505413VA (en) 2015-01-14 2015-07-10 Electronic device grade single crystal diamonds and method of producing the same
PCT/SG2015/000145 WO2016114716A1 (en) 2015-01-14 2015-12-28 Electronic device grade single crystal diamonds and method of producing the same

Publications (1)

Publication Number Publication Date
SG11201704920TA true SG11201704920TA (en) 2017-07-28

Family

ID=56367121

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201505413VA SG10201505413VA (en) 2015-01-14 2015-07-10 Electronic device grade single crystal diamonds and method of producing the same
SG11201704920TA SG11201704920TA (en) 2015-01-14 2015-12-28 Electronic device grade single crystal diamonds and method of producing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201505413VA SG10201505413VA (en) 2015-01-14 2015-07-10 Electronic device grade single crystal diamonds and method of producing the same

Country Status (8)

Country Link
US (1) US10550492B2 (en)
JP (1) JP6909727B2 (en)
KR (1) KR102003502B1 (en)
CN (1) CN107428541B (en)
HK (1) HK1243696A1 (en)
SG (2) SG10201505413VA (en)
TW (1) TWI679318B (en)
WO (1) WO2016114716A1 (en)

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JP6706580B2 (en) 2014-10-29 2020-06-10 住友電気工業株式会社 Composite diamond body and composite diamond tool
CN107557858A (en) * 2017-09-19 2018-01-09 武汉普迪真空科技有限公司 The method of isoepitaxial growth single-crystal diamond based on II a type natural diamonds
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
WO2019215643A1 (en) * 2018-05-08 2019-11-14 M7D Corporation Diamond materials comprising multiple cvd grown, small grain diamonds, in a single crystal diamond matrix
US11572621B2 (en) * 2019-09-24 2023-02-07 Akhan Semiconductor, Inc. Protective diamond coating system and method
CN111099586B (en) * 2019-11-27 2022-05-31 中国科学院金属研究所 Preparation method of high-brightness silicon vacancy color center in nano-diamond
CN110747505B (en) * 2019-12-02 2021-08-17 长沙新材料产业研究院有限公司 Method and device for controlling etching before growth of CVD synthetic diamond
KR102532228B1 (en) 2021-08-11 2023-05-15 중앙대학교 산학협력단 Method for manufacturing hierarchical Diamond structure using regrowth by etching and Chemical Vapor Deposition
CN114086253B (en) * 2021-11-25 2023-05-09 航天科工(长沙)新材料研究院有限公司 Preparation method of electronic grade diamond
CN114318531A (en) * 2022-01-06 2022-04-12 济南金刚石科技有限公司 Stripping method applied to MPCVD large-size diamond polycrystal
CN114540790B (en) * 2022-01-28 2023-08-01 徐州景澜新材料科技有限公司 MPCVD method single crystal diamond manufacturing apparatus and manufacturing method thereof
CN114836829B (en) * 2022-04-27 2024-07-05 河南天璇半导体科技有限责任公司 Method for producing single crystal diamond by MPCVD method
CN115058770B (en) * 2022-06-29 2023-08-22 中南钻石有限公司 Single crystal diamond manufacturing method for improving growth quantity of CVD single crystal diamond
GB202219497D0 (en) * 2022-12-22 2023-02-08 Element Six Tech Ltd Single crystal diamond

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KR900008505B1 (en) 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Microwave enhanced cvd method for depositing carbon
US5094915A (en) 1990-05-16 1992-03-10 The Ohio State University Laser-excited synthesis of carbon films from carbon monoxide-containing gas mixtures
US5443032A (en) 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3176493B2 (en) * 1993-09-17 2001-06-18 株式会社神戸製鋼所 Method of forming highly oriented diamond thin film
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
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JP4525897B2 (en) * 2004-03-22 2010-08-18 住友電気工業株式会社 Diamond single crystal substrate
WO2006082746A1 (en) * 2005-02-03 2006-08-10 National Institute Of Advanced Industrial Science And Technology FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF n-TYPE (100) FACE ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME
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Also Published As

Publication number Publication date
KR102003502B1 (en) 2019-10-17
WO2016114716A1 (en) 2016-07-21
TWI679318B (en) 2019-12-11
TW201636464A (en) 2016-10-16
US10550492B2 (en) 2020-02-04
HK1243696A1 (en) 2018-07-20
JP2018502041A (en) 2018-01-25
SG10201505413VA (en) 2016-08-30
CN107428541A (en) 2017-12-01
US20160201221A1 (en) 2016-07-14
JP6909727B2 (en) 2021-07-28
KR20170104479A (en) 2017-09-15
CN107428541B (en) 2020-11-20

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