SG11201704920TA - Electronic device grade single crystal diamonds and method of producing the same - Google Patents
Electronic device grade single crystal diamonds and method of producing the sameInfo
- Publication number
- SG11201704920TA SG11201704920TA SG11201704920TA SG11201704920TA SG11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA SG 11201704920T A SG11201704920T A SG 11201704920TA
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- electronic device
- same
- single crystal
- crystal diamonds
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201500278YA SG10201500278YA (en) | 2015-01-14 | 2015-01-14 | Electronic device grade diamonds and method of producing the same |
SG10201505413VA SG10201505413VA (en) | 2015-01-14 | 2015-07-10 | Electronic device grade single crystal diamonds and method of producing the same |
PCT/SG2015/000145 WO2016114716A1 (en) | 2015-01-14 | 2015-12-28 | Electronic device grade single crystal diamonds and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201704920TA true SG11201704920TA (en) | 2017-07-28 |
Family
ID=56367121
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201505413VA SG10201505413VA (en) | 2015-01-14 | 2015-07-10 | Electronic device grade single crystal diamonds and method of producing the same |
SG11201704920TA SG11201704920TA (en) | 2015-01-14 | 2015-12-28 | Electronic device grade single crystal diamonds and method of producing the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201505413VA SG10201505413VA (en) | 2015-01-14 | 2015-07-10 | Electronic device grade single crystal diamonds and method of producing the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10550492B2 (en) |
JP (1) | JP6909727B2 (en) |
KR (1) | KR102003502B1 (en) |
CN (1) | CN107428541B (en) |
HK (1) | HK1243696A1 (en) |
SG (2) | SG10201505413VA (en) |
TW (1) | TWI679318B (en) |
WO (1) | WO2016114716A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6706580B2 (en) | 2014-10-29 | 2020-06-10 | 住友電気工業株式会社 | Composite diamond body and composite diamond tool |
CN107557858A (en) * | 2017-09-19 | 2018-01-09 | 武汉普迪真空科技有限公司 | The method of isoepitaxial growth single-crystal diamond based on II a type natural diamonds |
US11469077B2 (en) | 2018-04-24 | 2022-10-11 | FD3M, Inc. | Microwave plasma chemical vapor deposition device and application thereof |
WO2019215643A1 (en) * | 2018-05-08 | 2019-11-14 | M7D Corporation | Diamond materials comprising multiple cvd grown, small grain diamonds, in a single crystal diamond matrix |
US11572621B2 (en) * | 2019-09-24 | 2023-02-07 | Akhan Semiconductor, Inc. | Protective diamond coating system and method |
CN111099586B (en) * | 2019-11-27 | 2022-05-31 | 中国科学院金属研究所 | Preparation method of high-brightness silicon vacancy color center in nano-diamond |
CN110747505B (en) * | 2019-12-02 | 2021-08-17 | 长沙新材料产业研究院有限公司 | Method and device for controlling etching before growth of CVD synthetic diamond |
KR102532228B1 (en) | 2021-08-11 | 2023-05-15 | 중앙대학교 산학협력단 | Method for manufacturing hierarchical Diamond structure using regrowth by etching and Chemical Vapor Deposition |
CN114086253B (en) * | 2021-11-25 | 2023-05-09 | 航天科工(长沙)新材料研究院有限公司 | Preparation method of electronic grade diamond |
CN114318531A (en) * | 2022-01-06 | 2022-04-12 | 济南金刚石科技有限公司 | Stripping method applied to MPCVD large-size diamond polycrystal |
CN114540790B (en) * | 2022-01-28 | 2023-08-01 | 徐州景澜新材料科技有限公司 | MPCVD method single crystal diamond manufacturing apparatus and manufacturing method thereof |
CN114836829B (en) * | 2022-04-27 | 2024-07-05 | 河南天璇半导体科技有限责任公司 | Method for producing single crystal diamond by MPCVD method |
CN115058770B (en) * | 2022-06-29 | 2023-08-22 | 中南钻石有限公司 | Single crystal diamond manufacturing method for improving growth quantity of CVD single crystal diamond |
GB202219497D0 (en) * | 2022-12-22 | 2023-02-08 | Element Six Tech Ltd | Single crystal diamond |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900008505B1 (en) | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Microwave enhanced cvd method for depositing carbon |
US5094915A (en) | 1990-05-16 | 1992-03-10 | The Ohio State University | Laser-excited synthesis of carbon films from carbon monoxide-containing gas mixtures |
US5443032A (en) | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
JP3176493B2 (en) * | 1993-09-17 | 2001-06-18 | 株式会社神戸製鋼所 | Method of forming highly oriented diamond thin film |
US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6858080B2 (en) * | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
GB2379451B (en) * | 2000-06-15 | 2004-05-05 | Element Six | Thick single crystal diamond layer method for making it and gemstones produced from the layer |
CZ302228B6 (en) * | 2000-06-15 | 2011-01-05 | Element Six (Pty) Ltd | Single crystal diamond layer prepared by chemical vapor deposition from gaseous phase |
FR2848335B1 (en) | 2002-12-06 | 2005-10-07 | Centre Nat Rech Scient | PROCESS FOR THE PREPARATION OF HIGH-CONDUCTIVITY N-TYPE DIAMOND DIAMOND |
JP4525897B2 (en) * | 2004-03-22 | 2010-08-18 | 住友電気工業株式会社 | Diamond single crystal substrate |
WO2006082746A1 (en) * | 2005-02-03 | 2006-08-10 | National Institute Of Advanced Industrial Science And Technology | FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF n-TYPE (100) FACE ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME |
JP5002982B2 (en) * | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | Method for producing single crystal diamond |
GB0508889D0 (en) * | 2005-04-29 | 2005-06-08 | Element Six Ltd | Diamond transistor and method of manufacture thereof |
EP1907320A4 (en) | 2005-05-25 | 2010-05-05 | Carnegie Inst Of Washington | Colorless single-crystal cvd diamond at rapid growth rate |
EP2253733B1 (en) | 2005-06-22 | 2012-03-21 | Element Six Limited | High colour diamond |
WO2007081492A2 (en) * | 2006-01-04 | 2007-07-19 | Uab Research Foundation | High growth rate methods of producing high-quality diamonds |
EP1996751A2 (en) * | 2006-02-07 | 2008-12-03 | Target Technology Company, LLC. | Materials and methods for the manufacture of large crystal diamonds |
JP2009196832A (en) * | 2008-02-20 | 2009-09-03 | National Institute Of Advanced Industrial & Technology | Method for manufacturing single crystal diamond by plasma cvd process |
US8316797B2 (en) | 2008-06-16 | 2012-11-27 | Board of Trustees of Michigan State University Fraunhofer USA | Microwave plasma reactors |
SG157973A1 (en) | 2008-06-18 | 2010-01-29 | Indian Inst Technology Bombay | Method for growing monocrystalline diamonds |
GB0813491D0 (en) * | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
SG179318A1 (en) | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
US20130272928A1 (en) * | 2012-04-12 | 2013-10-17 | Devi Shanker Misra | Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein |
-
2015
- 2015-07-10 SG SG10201505413VA patent/SG10201505413VA/en unknown
- 2015-11-17 US US14/943,820 patent/US10550492B2/en not_active Expired - Fee Related
- 2015-12-28 WO PCT/SG2015/000145 patent/WO2016114716A1/en active Application Filing
- 2015-12-28 JP JP2017537446A patent/JP6909727B2/en active Active
- 2015-12-28 KR KR1020177019597A patent/KR102003502B1/en active IP Right Grant
- 2015-12-28 CN CN201580073480.7A patent/CN107428541B/en active Active
- 2015-12-28 SG SG11201704920TA patent/SG11201704920TA/en unknown
-
2016
- 2016-01-05 TW TW105100119A patent/TWI679318B/en not_active IP Right Cessation
-
2018
- 2018-03-09 HK HK18103316.1A patent/HK1243696A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR102003502B1 (en) | 2019-10-17 |
WO2016114716A1 (en) | 2016-07-21 |
TWI679318B (en) | 2019-12-11 |
TW201636464A (en) | 2016-10-16 |
US10550492B2 (en) | 2020-02-04 |
HK1243696A1 (en) | 2018-07-20 |
JP2018502041A (en) | 2018-01-25 |
SG10201505413VA (en) | 2016-08-30 |
CN107428541A (en) | 2017-12-01 |
US20160201221A1 (en) | 2016-07-14 |
JP6909727B2 (en) | 2021-07-28 |
KR20170104479A (en) | 2017-09-15 |
CN107428541B (en) | 2020-11-20 |
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