SG11201704070SA - Film-forming composition containing silicone having crosslinking reactivity - Google Patents
Film-forming composition containing silicone having crosslinking reactivityInfo
- Publication number
- SG11201704070SA SG11201704070SA SG11201704070SA SG11201704070SA SG11201704070SA SG 11201704070S A SG11201704070S A SG 11201704070SA SG 11201704070S A SG11201704070S A SG 11201704070SA SG 11201704070S A SG11201704070S A SG 11201704070SA SG 11201704070S A SG11201704070S A SG 11201704070SA
- Authority
- SG
- Singapore
- Prior art keywords
- film
- composition containing
- forming composition
- containing silicone
- crosslinking reactivity
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014234590 | 2014-11-19 | ||
PCT/JP2015/081476 WO2016080226A1 (en) | 2014-11-19 | 2015-11-09 | Film-forming composition containing crosslinkable reactive silicone |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201704070SA true SG11201704070SA (en) | 2017-06-29 |
Family
ID=56013771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201704070SA SG11201704070SA (en) | 2014-11-19 | 2015-11-09 | Film-forming composition containing silicone having crosslinking reactivity |
Country Status (8)
Country | Link |
---|---|
US (1) | US10845703B2 (en) |
EP (1) | EP3222688A4 (en) |
JP (1) | JP6788222B2 (en) |
KR (1) | KR102543831B1 (en) |
CN (1) | CN107075302B (en) |
SG (1) | SG11201704070SA (en) |
TW (1) | TWI712659B (en) |
WO (1) | WO2016080226A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6660023B2 (en) * | 2014-11-19 | 2020-03-04 | 日産化学株式会社 | Silicon-containing resist underlayer film forming composition capable of wet removal |
WO2016199762A1 (en) * | 2015-06-11 | 2016-12-15 | 日産化学工業株式会社 | Radiation sensitive composition |
JP6603115B2 (en) * | 2015-11-27 | 2019-11-06 | 信越化学工業株式会社 | Silicon-containing condensate, silicon-containing resist underlayer film forming composition, and pattern forming method |
WO2017154545A1 (en) * | 2016-03-10 | 2017-09-14 | Jsr株式会社 | Film formation material for resist process, pattern formation method, and polymer |
TWI776915B (en) * | 2017-07-06 | 2022-09-11 | 日商日產化學股份有限公司 | Alkaline developer soluble silicon-containing resist underlayer film forming composition |
JP7011444B2 (en) * | 2017-10-25 | 2022-01-26 | テクノUmg株式会社 | Graft polymer and thermoplastic resin composition |
CN111433675B (en) * | 2017-12-13 | 2023-08-29 | 株式会社尼康 | Pattern forming method, transistor manufacturing method, and pattern forming member |
CN111742020B (en) * | 2017-12-20 | 2022-08-16 | 日产化学株式会社 | Composition for forming photocurable silicon-containing coating film |
KR20200132864A (en) * | 2018-03-19 | 2020-11-25 | 닛산 가가쿠 가부시키가이샤 | Composition for forming a silicon-containing resist underlayer film containing a protected phenol group and nitric acid |
DE102018115379B3 (en) * | 2018-04-25 | 2019-10-10 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | A compound and method for forming self-assembled monolayers on TCO substrates for use in inverted architecture perovskite solar cells |
KR20220035149A (en) * | 2019-07-12 | 2022-03-21 | 인프리아 코포레이션 | Stabilized Interface of Inorganic Radiation Patterning Composition on Substrate |
US20240010870A1 (en) * | 2020-08-20 | 2024-01-11 | Bar-Ilan University | Uv-blocking coatings and anti-fogging and superhydrophobic coatings |
KR20230053588A (en) * | 2020-08-21 | 2023-04-21 | 닛산 가가쿠 가부시키가이샤 | EUV resist underlayer film forming composition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3461027A (en) | 1966-02-01 | 1969-08-12 | Dow Corning | Bonding of thermoplastic polymer resins to silane-primed siliceous or metallic materials |
US3427340A (en) * | 1966-02-01 | 1969-02-11 | Dow Corning | Alkoxyalkarylsilanes and condensates thereof |
JP2873855B2 (en) | 1990-03-26 | 1999-03-24 | 三菱レイヨン株式会社 | Coating composition and method for producing abrasion-resistant synthetic resin molded article using the same |
US5648201A (en) * | 1991-04-25 | 1997-07-15 | The United Sates Of America As Represented By The Secretary Of The Navy | Efficient chemistry for selective modification and metallization of substrates |
JPH1160735A (en) * | 1996-12-09 | 1999-03-05 | Toshiba Corp | Polysilane and formation of pattern |
CN101180579B (en) | 2005-05-24 | 2012-06-27 | 日产化学工业株式会社 | Polysilane compound-containing lower layer film forming composition for lithography |
DE102006022842A1 (en) | 2006-05-16 | 2007-11-22 | Wacker Chemie Ag | About methylol crosslinkable silicone polymers |
EP1908472A1 (en) * | 2006-10-02 | 2008-04-09 | Bayer Schering Pharma Aktiengesellschaft | Silicon derivatives for PET imaging |
JP2010100591A (en) * | 2008-10-27 | 2010-05-06 | Nissan Chem Ind Ltd | Halogen-substituted aromatic ring-containing polysiloxane |
JP5538941B2 (en) | 2010-02-18 | 2014-07-02 | Jsr株式会社 | Resist underlayer film forming method, pattern forming method and composition, resist underlayer film forming material additive, cross-linking agent, and resist underlayer film |
WO2012039337A1 (en) | 2010-09-21 | 2012-03-29 | 日産化学工業株式会社 | Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol |
TWI618985B (en) | 2011-08-10 | 2018-03-21 | 日產化學工業股份有限公司 | Resist underlayer film forming composition containing silicon having sulfone structure |
CN104737076B (en) | 2012-10-31 | 2020-04-03 | 日产化学工业株式会社 | Composition for forming silicon-containing resist underlayer film having ester group |
JP6217940B2 (en) | 2012-12-19 | 2017-10-25 | 日産化学工業株式会社 | Silicon-containing resist underlayer film forming composition having cyclic diester group |
-
2015
- 2015-11-09 US US15/528,037 patent/US10845703B2/en active Active
- 2015-11-09 SG SG11201704070SA patent/SG11201704070SA/en unknown
- 2015-11-09 KR KR1020177008835A patent/KR102543831B1/en active IP Right Grant
- 2015-11-09 WO PCT/JP2015/081476 patent/WO2016080226A1/en active Application Filing
- 2015-11-09 CN CN201580059708.7A patent/CN107075302B/en active Active
- 2015-11-09 EP EP15860187.2A patent/EP3222688A4/en not_active Withdrawn
- 2015-11-09 JP JP2016560150A patent/JP6788222B2/en active Active
- 2015-11-17 TW TW104137922A patent/TWI712659B/en active
Also Published As
Publication number | Publication date |
---|---|
US10845703B2 (en) | 2020-11-24 |
US20180335698A1 (en) | 2018-11-22 |
CN107075302A (en) | 2017-08-18 |
JPWO2016080226A1 (en) | 2017-09-28 |
EP3222688A4 (en) | 2018-06-27 |
TW201634614A (en) | 2016-10-01 |
KR20170088827A (en) | 2017-08-02 |
JP6788222B2 (en) | 2020-11-25 |
KR102543831B1 (en) | 2023-06-15 |
WO2016080226A1 (en) | 2016-05-26 |
TWI712659B (en) | 2020-12-11 |
EP3222688A1 (en) | 2017-09-27 |
CN107075302B (en) | 2020-08-04 |
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