SG11201703478VA - Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires - Google Patents

Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires

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Publication number
SG11201703478VA
SG11201703478VA SG11201703478VA SG11201703478VA SG11201703478VA SG 11201703478V A SG11201703478V A SG 11201703478VA SG 11201703478V A SG11201703478V A SG 11201703478VA SG 11201703478V A SG11201703478V A SG 11201703478VA SG 11201703478V A SG11201703478V A SG 11201703478VA
Authority
SG
Singapore
Prior art keywords
forming
nanowires
same
gas sensor
metal phthalocyanine
Prior art date
Application number
SG11201703478VA
Inventor
Pooi See Lee
Chaoyi Yan
Jiangxin Wang
Nandan Singh
Abhishek Singh Dahiya
Original Assignee
Univ Nanyang Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nanyang Tech filed Critical Univ Nanyang Tech
Priority to SG11201703478VA priority Critical patent/SG11201703478VA/en
Publication of SG11201703478VA publication Critical patent/SG11201703478VA/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
SG11201703478VA 2014-10-31 2015-11-02 Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires SG11201703478VA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG11201703478VA SG11201703478VA (en) 2014-10-31 2015-11-02 Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG10201407136R 2014-10-31
SG11201703478VA SG11201703478VA (en) 2014-10-31 2015-11-02 Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires
PCT/SG2015/050425 WO2016068810A1 (en) 2014-10-31 2015-11-02 Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires

Publications (1)

Publication Number Publication Date
SG11201703478VA true SG11201703478VA (en) 2017-05-30

Family

ID=55857952

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201703478VA SG11201703478VA (en) 2014-10-31 2015-11-02 Indium oxide nanowire having copper-based dopants, method of forming the same and gas sensor having the same, and method of forming a plurality of nanowires having metal phthalocyanine, nanowire arrangement and gas sensor having the plurality of metal phthalocyanine nanowires

Country Status (4)

Country Link
US (1) US20170307561A1 (en)
CN (1) CN107407655A (en)
SG (1) SG11201703478VA (en)
WO (1) WO2016068810A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106483168B (en) * 2016-10-28 2019-01-04 中国科学院合肥物质科学研究院 Cobalt Phthalocyanine gas sensor and preparation method thereof
WO2019136181A1 (en) * 2018-01-04 2019-07-11 Lyten, Inc. Resonant gas sensor
CN108376641A (en) * 2018-02-05 2018-08-07 天津理工大学 A method of Cu doped indium oxide nano wires are prepared based on controllable porous substrate
GB2575312A (en) * 2018-07-06 2020-01-08 B Sens Gas sensor
US11965803B2 (en) 2019-03-27 2024-04-23 Lyten, Inc. Field deployable resonant sensors
US11555761B1 (en) 2019-03-27 2023-01-17 Lyten, Inc. Sensors incorporated into elastomeric components to detect physical characteristic changes
US11585731B2 (en) 2019-03-27 2023-02-21 Lyten, Inc. Sensors incorporated into semi-rigid structural members to detect physical characteristic changes
CN110034232B (en) * 2019-04-05 2022-12-02 东北师范大学 Preparation method and application of field effect transistor taking iron phthalocyanine as raw material
CN110095490A (en) * 2019-04-17 2019-08-06 北京工业大学 A kind of device and method detecting four acicular type zinc oxide crystal whisker conductance property
US11988629B2 (en) 2020-06-23 2024-05-21 Lyten, Inc. Method of manufacturing a graphene-based biological field-effect transistor
CN112578007A (en) * 2020-12-02 2021-03-30 长春理工大学 Indium oxide-polyacid composite gas sensing material and preparation method thereof
CN113135926A (en) * 2021-04-23 2021-07-20 昆明学院 Novel crystal structure indium phthalocyanine nanowire and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101290302A (en) * 2007-09-13 2008-10-22 复旦大学 Micro-cavity gas-sensitive sensor based on simple root metallic oxide nanometer lines field effect tube
US20090101501A1 (en) * 2007-10-17 2009-04-23 Tao Xiao-Ming Room temperature gas sensors
DE102009015121B4 (en) * 2009-03-31 2012-10-31 Siemens Aktiengesellschaft Selective carbon monoxide detector and method of operation of the detector

Also Published As

Publication number Publication date
CN107407655A (en) 2017-11-28
WO2016068810A1 (en) 2016-05-06
US20170307561A1 (en) 2017-10-26

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