SG11201702807YA - Thermal compensation for burst-mode laser wavelength drift - Google Patents
Thermal compensation for burst-mode laser wavelength driftInfo
- Publication number
- SG11201702807YA SG11201702807YA SG11201702807YA SG11201702807YA SG11201702807YA SG 11201702807Y A SG11201702807Y A SG 11201702807YA SG 11201702807Y A SG11201702807Y A SG 11201702807YA SG 11201702807Y A SG11201702807Y A SG 11201702807YA SG 11201702807Y A SG11201702807Y A SG 11201702807YA
- Authority
- SG
- Singapore
- Prior art keywords
- burst
- laser wavelength
- thermal compensation
- mode laser
- wavelength drift
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
- H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06213—Amplitude modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/509,662 US9246307B1 (en) | 2014-10-08 | 2014-10-08 | Thermal compensation for burst-mode laser wavelength drift |
PCT/CN2015/090922 WO2016054981A1 (en) | 2014-10-08 | 2015-09-28 | Thermal compensation for burst-mode laser wavelength drift |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201702807YA true SG11201702807YA (en) | 2017-05-30 |
Family
ID=55086263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201702807YA SG11201702807YA (en) | 2014-10-08 | 2015-09-28 | Thermal compensation for burst-mode laser wavelength drift |
Country Status (11)
Country | Link |
---|---|
US (1) | US9246307B1 (en) |
EP (2) | EP4123850B1 (en) |
JP (1) | JP6607581B2 (en) |
KR (1) | KR101963988B1 (en) |
CN (1) | CN106716751B (en) |
AU (1) | AU2015330500B2 (en) |
CA (1) | CA2964174C (en) |
FI (1) | FI4123850T3 (en) |
RU (1) | RU2680981C2 (en) |
SG (1) | SG11201702807YA (en) |
WO (1) | WO2016054981A1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5785589B2 (en) * | 2013-06-27 | 2015-09-30 | 日本電信電話株式会社 | Burst optical signal transmitter and control method of burst optical signal transmitter |
US9537287B2 (en) * | 2014-10-08 | 2017-01-03 | Futurewei Technologies, Inc. | Thermal compensation for burst-mode laser wavelength drift |
JP6974427B2 (en) * | 2016-07-21 | 2021-12-01 | 華為技術有限公司Huawei Technologies Co., Ltd. | Wavelength shift control method and system |
KR101928387B1 (en) * | 2016-11-25 | 2018-12-12 | 주식회사 포벨 | Optical transmitter with heater and control method of |
JP6738488B2 (en) * | 2017-05-15 | 2020-08-12 | 日本電信電話株式会社 | Semiconductor optical device |
KR101972600B1 (en) * | 2018-02-12 | 2019-08-16 | 김정수 | Optical Transmitter Operating Burst Mode and Control Method of Optical Transmitter Operating Burst Mode |
CN110945802B (en) * | 2017-07-29 | 2023-01-20 | 光速株式会社 | Optical transmitter operating in burst mode and method for controlling optical transmitter operating in burst mode |
CN107508139B (en) * | 2017-08-28 | 2019-11-08 | 武汉电信器件有限公司 | The method and laser of wave length shift under a kind of reduction burst mode of laser |
CN107888293B (en) * | 2017-11-24 | 2020-05-12 | 青岛海信宽带多媒体技术有限公司 | Optical module |
CN108512017A (en) * | 2018-03-28 | 2018-09-07 | 武汉电信器件有限公司 | A kind of laser assembly with positive function of temperature control |
WO2019226333A1 (en) * | 2018-05-21 | 2019-11-28 | Google Llc | Wavelength drift suppression for burst-mode tunable eml laser |
CN112189286B (en) * | 2018-05-21 | 2024-06-14 | 谷歌有限责任公司 | Switching circuit for burst mode tunable laser |
DE102018118694A1 (en) * | 2018-08-01 | 2020-02-06 | Osram Opto Semiconductors Gmbh | laser diode chip |
US11018474B2 (en) | 2018-11-30 | 2021-05-25 | Optella Inc. | Laser temperature compensation system and driving method thereof |
CN111431593B (en) * | 2020-03-26 | 2021-04-06 | 武汉光迅科技股份有限公司 | Wavelength drift measuring method and wavelength drift measuring system |
KR20240104642A (en) * | 2022-12-28 | 2024-07-05 | 주식회사 포벨 | DWDM Optical Device with Two Light Source Chips |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CA2091302A1 (en) * | 1992-03-11 | 1993-09-12 | Ichiro Yoshida | Semiconductor laser and process for fabricating the same |
JP3196787B2 (en) * | 1992-06-03 | 2001-08-06 | 住友電気工業株式会社 | How to use semiconductor laser |
IT1268058B1 (en) * | 1994-05-20 | 1997-02-20 | Cselt Centro Studi Lab Telec O | PROCEDURE AND DEVICE FOR CHECKING THE PEAK POWER OF A LASER TRANSMITTER IN DISCONTINUOUS OPTICAL TRANSMISSION SYSTEMS. |
US5615224A (en) * | 1995-01-04 | 1997-03-25 | The Regents Of The University Of California | Apparatus and method for stabilization of the bandgap and associated properties of semiconductor electronic and optoelectronic devices |
GB2309335B (en) * | 1996-01-22 | 1998-04-08 | Northern Telecom Ltd | Thin film resistor for optoelectronic integrated circuits |
JP2000101143A (en) * | 1998-09-25 | 2000-04-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting element mounting board, wavelength-variable light emitting device and wavelength-variable light emitting array |
JP4074724B2 (en) * | 1999-04-07 | 2008-04-09 | 日本オプネクスト株式会社 | Wavelength tunable light source and optical apparatus using the same |
US6703666B1 (en) * | 1999-07-14 | 2004-03-09 | Agere Systems Inc. | Thin film resistor device and a method of manufacture therefor |
AU2002342020A1 (en) * | 2001-10-09 | 2003-04-22 | Infinera Corporation | Transmitter photonic integrated circuit |
JP4231854B2 (en) * | 2005-03-17 | 2009-03-04 | アンリツ株式会社 | Semiconductor laser element and gas detector |
KR100698160B1 (en) * | 2005-09-09 | 2007-03-22 | 엘지전자 주식회사 | A network searching method for a mobile telecommunication device |
RU2316864C1 (en) * | 2006-03-20 | 2008-02-10 | Михаил Ильич Свердлов | Laser radiator |
US20080063016A1 (en) | 2006-09-13 | 2008-03-13 | Vikram Bhatia | Thermal compensation in semiconductor lasers |
US7602027B2 (en) * | 2006-12-29 | 2009-10-13 | Semiconductor Components Industries, L.L.C. | Semiconductor component and method of manufacture |
WO2010018574A1 (en) * | 2008-08-11 | 2010-02-18 | Explay Ltd. | Laser assembly and method and system for its operation |
US8149890B2 (en) * | 2008-12-04 | 2012-04-03 | Electronics And Telecommunications Research Institute | Multiple distributed feedback laser devices |
US8204094B2 (en) * | 2009-04-21 | 2012-06-19 | Innova, Inc. | Scalable, efficient laser systems |
JP5853599B2 (en) * | 2011-11-01 | 2016-02-09 | 富士通株式会社 | Light emitting device and control method thereof |
CN102545040B (en) * | 2011-11-29 | 2013-04-10 | 厦门优迅高速芯片有限公司 | Burst mode optical power holding and monitoring circuit |
JP5990971B2 (en) * | 2012-03-28 | 2016-09-14 | 富士通株式会社 | Optical semiconductor device |
JP2014003224A (en) * | 2012-06-20 | 2014-01-09 | Sumitomo Electric Ind Ltd | Method for controlling wavelength of laser beam |
-
2014
- 2014-10-08 US US14/509,662 patent/US9246307B1/en active Active
-
2015
- 2015-09-28 KR KR1020177011575A patent/KR101963988B1/en active IP Right Grant
- 2015-09-28 RU RU2017115722A patent/RU2680981C2/en active
- 2015-09-28 JP JP2017518902A patent/JP6607581B2/en active Active
- 2015-09-28 EP EP22193853.3A patent/EP4123850B1/en active Active
- 2015-09-28 WO PCT/CN2015/090922 patent/WO2016054981A1/en active Application Filing
- 2015-09-28 CA CA2964174A patent/CA2964174C/en active Active
- 2015-09-28 EP EP15849323.9A patent/EP3192137B1/en active Active
- 2015-09-28 AU AU2015330500A patent/AU2015330500B2/en active Active
- 2015-09-28 FI FIEP22193853.3T patent/FI4123850T3/en active
- 2015-09-28 CN CN201580051792.8A patent/CN106716751B/en active Active
- 2015-09-28 SG SG11201702807YA patent/SG11201702807YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3192137B1 (en) | 2022-11-02 |
US9246307B1 (en) | 2016-01-26 |
RU2017115722A (en) | 2018-11-13 |
EP3192137A1 (en) | 2017-07-19 |
RU2680981C2 (en) | 2019-03-01 |
CN106716751B (en) | 2019-12-06 |
KR20170060147A (en) | 2017-05-31 |
CA2964174A1 (en) | 2016-04-14 |
AU2015330500B2 (en) | 2017-11-23 |
EP3192137A4 (en) | 2018-02-14 |
RU2017115722A3 (en) | 2018-11-13 |
JP6607581B2 (en) | 2019-11-20 |
CA2964174C (en) | 2021-03-30 |
KR101963988B1 (en) | 2019-03-29 |
CN106716751A (en) | 2017-05-24 |
EP4123850A1 (en) | 2023-01-25 |
AU2015330500A1 (en) | 2017-04-27 |
WO2016054981A1 (en) | 2016-04-14 |
FI4123850T3 (en) | 2024-02-21 |
EP4123850B1 (en) | 2024-01-31 |
JP2017531923A (en) | 2017-10-26 |
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