SG11201401203RA - Methods and apparatus for classification of defects using surface height attributes - Google Patents

Methods and apparatus for classification of defects using surface height attributes

Info

Publication number
SG11201401203RA
SG11201401203RA SG11201401203RA SG11201401203RA SG11201401203RA SG 11201401203R A SG11201401203R A SG 11201401203RA SG 11201401203R A SG11201401203R A SG 11201401203RA SG 11201401203R A SG11201401203R A SG 11201401203RA SG 11201401203R A SG11201401203R A SG 11201401203RA
Authority
SG
Singapore
Prior art keywords
classification
defects
methods
surface height
height attributes
Prior art date
Application number
SG11201401203RA
Inventor
Chien-Huei Chen
Hedong Yang
Cho Teh
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201401203RA publication Critical patent/SG11201401203RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10004—Still image; Photographic image
    • G06T2207/10012—Stereo images
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10028—Range image; Depth image; 3D point clouds
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
SG11201401203RA 2011-10-03 2012-09-20 Methods and apparatus for classification of defects using surface height attributes SG11201401203RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/252,042 US8502146B2 (en) 2011-10-03 2011-10-03 Methods and apparatus for classification of defects using surface height attributes
PCT/US2012/056317 WO2013052283A1 (en) 2011-10-03 2012-09-20 Methods and apparatus for classification of defects using surface height attributes

Publications (1)

Publication Number Publication Date
SG11201401203RA true SG11201401203RA (en) 2014-05-29

Family

ID=47991686

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401203RA SG11201401203RA (en) 2011-10-03 2012-09-20 Methods and apparatus for classification of defects using surface height attributes

Country Status (7)

Country Link
US (1) US8502146B2 (en)
EP (1) EP2764349A4 (en)
JP (1) JP6188695B2 (en)
KR (1) KR101809315B1 (en)
SG (1) SG11201401203RA (en)
TW (1) TWI580952B (en)
WO (1) WO2013052283A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9715723B2 (en) 2012-04-19 2017-07-25 Applied Materials Israel Ltd Optimization of unknown defect rejection for automatic defect classification
US10043264B2 (en) 2012-04-19 2018-08-07 Applied Materials Israel Ltd. Integration of automatic and manual defect classification
US9858658B2 (en) 2012-04-19 2018-01-02 Applied Materials Israel Ltd Defect classification using CAD-based context attributes
US9595091B2 (en) 2012-04-19 2017-03-14 Applied Materials Israel, Ltd. Defect classification using topographical attributes
US9607233B2 (en) 2012-04-20 2017-03-28 Applied Materials Israel Ltd. Classifier readiness and maintenance in automatic defect classification
US9466101B2 (en) * 2013-05-01 2016-10-11 Taiwan Semiconductor Manufacturing Company Limited Detection of defects on wafer during semiconductor fabrication
US9430824B2 (en) * 2013-05-14 2016-08-30 Kla-Tencor Corporation Machine learning method and apparatus for inspecting reticles
TWI627546B (en) * 2013-06-29 2018-06-21 新納普系統股份有限公司 Chip cross-section identification and rendering during failure analysis
US10114368B2 (en) 2013-07-22 2018-10-30 Applied Materials Israel Ltd. Closed-loop automatic defect inspection and classification
US9489599B2 (en) * 2013-11-03 2016-11-08 Kla-Tencor Corp. Decision tree construction for automatic classification of defects on semiconductor wafers
KR102427139B1 (en) * 2014-02-12 2022-07-29 에이에스엠엘 네델란즈 비.브이. Method of optimizing a process window
JP6546826B2 (en) * 2015-10-08 2019-07-17 株式会社日立パワーソリューションズ Defect inspection method and apparatus therefor
US10957608B2 (en) * 2017-04-28 2021-03-23 Kla-Tencor Corporation Guided scanning electron microscopy metrology based on wafer topography
US11048163B2 (en) * 2017-11-07 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Inspection method of a photomask and an inspection system
CN111292303B (en) * 2020-01-21 2023-09-19 湖北文理学院 Weld defect type detection method and device, electronic equipment and storage medium

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006113073A (en) * 1997-07-04 2006-04-27 Hitachi Ltd System and method for pattern defect inspection
US6987873B1 (en) * 1998-07-08 2006-01-17 Applied Materials, Inc. Automatic defect classification with invariant core classes
US6353222B1 (en) 1998-09-03 2002-03-05 Applied Materials, Inc. Determining defect depth and contour information in wafer structures using multiple SEM images
JP2002116161A (en) * 2000-10-05 2002-04-19 Jeol Ltd Convexness/concaveness judging device for detected pattern, convexness/concaveness judging method, pattern defect judging device, and pattern defect judging method
JP3990981B2 (en) * 2000-12-15 2007-10-17 ケイエルエイ−テンコー コーポレイション Method and apparatus for inspecting a substrate
US7473911B2 (en) * 2002-07-30 2009-01-06 Applied Materials, Israel, Ltd. Specimen current mapper
JP2004214060A (en) * 2003-01-06 2004-07-29 Hitachi High-Technologies Corp Scanning electron microscope, and testpiece observation method using it
KR101035426B1 (en) * 2003-07-11 2011-05-18 어플라이드 머티리얼즈 이스라엘 리미티드 A system and method for determining a cross sectional feature of a structural element using a reference structural element
CN1820194B (en) * 2003-07-30 2012-06-13 应用材料以色列公司 Scanning electron microscope having multiple detectors and a method for multiple detector based imaging
KR100543467B1 (en) 2003-12-11 2006-01-20 삼성전자주식회사 Method and system for measuring critical dimension of fine pattern
JP4936985B2 (en) 2007-05-14 2012-05-23 株式会社日立ハイテクノロジーズ Scanning electron microscope and three-dimensional shape measuring apparatus using the same
JP2009270976A (en) * 2008-05-08 2009-11-19 Hitachi High-Technologies Corp Flaw reviewing method and flaw reviewing apparatus
DE102008062928A1 (en) * 2008-12-23 2010-07-01 Nawotec Gmbh A method of determining a repair shape of a defect at or near an edge of a substrate of a photomask
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
US20120223227A1 (en) * 2011-03-04 2012-09-06 Chien-Huei Chen Apparatus and methods for real-time three-dimensional sem imaging and viewing of semiconductor wafers

Also Published As

Publication number Publication date
JP6188695B2 (en) 2017-08-30
WO2013052283A1 (en) 2013-04-11
US20130082174A1 (en) 2013-04-04
US8502146B2 (en) 2013-08-06
TWI580952B (en) 2017-05-01
EP2764349A1 (en) 2014-08-13
JP2015500979A (en) 2015-01-08
KR101809315B1 (en) 2017-12-14
EP2764349A4 (en) 2015-04-22
KR20140072178A (en) 2014-06-12
TW201319556A (en) 2013-05-16

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