SG11201400366YA - Method for separating a layer from a composite structure - Google Patents
Method for separating a layer from a composite structureInfo
- Publication number
- SG11201400366YA SG11201400366YA SG11201400366YA SG11201400366YA SG11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA
- Authority
- SG
- Singapore
- Prior art keywords
- separating
- layer
- composite structure
- composite
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
- Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158331A FR2980280B1 (en) | 2011-09-20 | 2011-09-20 | METHOD FOR SEPARATING A LAYER IN A COMPOSITE STRUCTURE |
PCT/IB2012/001406 WO2013011372A1 (en) | 2011-07-20 | 2012-07-18 | Method for separating a layer from a composite structure |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400366YA true SG11201400366YA (en) | 2014-09-26 |
Family
ID=46598874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400366YA SG11201400366YA (en) | 2011-09-20 | 2012-07-18 | Method for separating a layer from a composite structure |
Country Status (8)
Country | Link |
---|---|
US (1) | US10220603B2 (en) |
KR (1) | KR20140065449A (en) |
CN (1) | CN103814435B (en) |
DE (1) | DE112012003512T5 (en) |
FR (1) | FR2980280B1 (en) |
SG (1) | SG11201400366YA (en) |
TW (1) | TWI594297B (en) |
WO (1) | WO2013011372A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2995447B1 (en) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE |
FR2995445B1 (en) | 2012-09-07 | 2016-01-08 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A STRUCTURE FOR SUBSEQUENT SEPARATION |
FR2995444B1 (en) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | METHOD FOR DETACHING A LAYER |
KR102015400B1 (en) * | 2012-11-29 | 2019-10-22 | 삼성디스플레이 주식회사 | Apparatus for ablation of carrier substrate, method for ablation of carrier substrate and method for making display apparatus |
US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476566A (en) * | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
CN1495523A (en) * | 1996-08-27 | 2004-05-12 | ������������ʽ���� | Transfer method and active matrix base board mfg. method |
JPH1126733A (en) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment |
JP4085459B2 (en) | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | Manufacturing method of three-dimensional device |
JP3962282B2 (en) * | 2002-05-23 | 2007-08-22 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
JP4565804B2 (en) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor |
US7507312B2 (en) * | 2005-08-23 | 2009-03-24 | The Boeing Company | Using laser shock loads to debond structures |
TWI410329B (en) * | 2009-03-09 | 2013-10-01 | Ind Tech Res Inst | Apparatus for releasing a flexible device and method thereof |
KR20120027237A (en) * | 2009-04-16 | 2012-03-21 | 수스 마이크로텍 리소그라피 게엠바하 | Improved apparatus for temporary wafer bonding and debonding |
WO2011073716A1 (en) * | 2009-12-15 | 2011-06-23 | S.O.I. Tec Silicon On Insulator Technologies | Process for recycling a substrate. |
US8679280B2 (en) * | 2010-05-27 | 2014-03-25 | International Business Machines Corporation | Laser ablation of adhesive for integrated circuit fabrication |
-
2011
- 2011-09-20 FR FR1158331A patent/FR2980280B1/en active Active
-
2012
- 2012-07-18 CN CN201280045524.1A patent/CN103814435B/en active Active
- 2012-07-18 DE DE112012003512.7T patent/DE112012003512T5/en active Pending
- 2012-07-18 KR KR1020147010321A patent/KR20140065449A/en not_active Application Discontinuation
- 2012-07-18 WO PCT/IB2012/001406 patent/WO2013011372A1/en active Application Filing
- 2012-07-18 SG SG11201400366YA patent/SG11201400366YA/en unknown
- 2012-07-18 US US14/346,238 patent/US10220603B2/en active Active
- 2012-08-08 TW TW101128667A patent/TWI594297B/en active
Also Published As
Publication number | Publication date |
---|---|
DE112012003512T5 (en) | 2014-12-31 |
WO2013011372A1 (en) | 2013-01-24 |
CN103814435A (en) | 2014-05-21 |
KR20140065449A (en) | 2014-05-29 |
FR2980280A1 (en) | 2013-03-22 |
US10220603B2 (en) | 2019-03-05 |
WO2013011372A8 (en) | 2014-04-24 |
FR2980280B1 (en) | 2013-10-11 |
TWI594297B (en) | 2017-08-01 |
CN103814435B (en) | 2016-08-31 |
US20140326416A1 (en) | 2014-11-06 |
TW201316379A (en) | 2013-04-16 |
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