SG11201400366YA - Method for separating a layer from a composite structure - Google Patents

Method for separating a layer from a composite structure

Info

Publication number
SG11201400366YA
SG11201400366YA SG11201400366YA SG11201400366YA SG11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA SG 11201400366Y A SG11201400366Y A SG 11201400366YA
Authority
SG
Singapore
Prior art keywords
separating
layer
composite structure
composite
Prior art date
Application number
SG11201400366YA
Inventor
Didier Landru
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201400366YA publication Critical patent/SG11201400366YA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006Delaminating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00Treatment by energy or chemical effects
    • B32B2310/08Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
SG11201400366YA 2011-09-20 2012-07-18 Method for separating a layer from a composite structure SG11201400366YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1158331A FR2980280B1 (en) 2011-09-20 2011-09-20 METHOD FOR SEPARATING A LAYER IN A COMPOSITE STRUCTURE
PCT/IB2012/001406 WO2013011372A1 (en) 2011-07-20 2012-07-18 Method for separating a layer from a composite structure

Publications (1)

Publication Number Publication Date
SG11201400366YA true SG11201400366YA (en) 2014-09-26

Family

ID=46598874

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400366YA SG11201400366YA (en) 2011-09-20 2012-07-18 Method for separating a layer from a composite structure

Country Status (8)

Country Link
US (1) US10220603B2 (en)
KR (1) KR20140065449A (en)
CN (1) CN103814435B (en)
DE (1) DE112012003512T5 (en)
FR (1) FR2980280B1 (en)
SG (1) SG11201400366YA (en)
TW (1) TWI594297B (en)
WO (1) WO2013011372A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995447B1 (en) 2012-09-07 2014-09-05 Soitec Silicon On Insulator METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE
FR2995445B1 (en) 2012-09-07 2016-01-08 Soitec Silicon On Insulator METHOD OF MANUFACTURING A STRUCTURE FOR SUBSEQUENT SEPARATION
FR2995444B1 (en) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator METHOD FOR DETACHING A LAYER
KR102015400B1 (en) * 2012-11-29 2019-10-22 삼성디스플레이 주식회사 Apparatus for ablation of carrier substrate, method for ablation of carrier substrate and method for making display apparatus
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
CN1495523A (en) * 1996-08-27 2004-05-12 ������������ʽ���� Transfer method and active matrix base board mfg. method
JPH1126733A (en) * 1997-07-03 1999-01-29 Seiko Epson Corp Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment
JP4085459B2 (en) 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
JP3962282B2 (en) * 2002-05-23 2007-08-22 松下電器産業株式会社 Manufacturing method of semiconductor device
JP4565804B2 (en) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor
US7507312B2 (en) * 2005-08-23 2009-03-24 The Boeing Company Using laser shock loads to debond structures
TWI410329B (en) * 2009-03-09 2013-10-01 Ind Tech Res Inst Apparatus for releasing a flexible device and method thereof
KR20120027237A (en) * 2009-04-16 2012-03-21 수스 마이크로텍 리소그라피 게엠바하 Improved apparatus for temporary wafer bonding and debonding
WO2011073716A1 (en) * 2009-12-15 2011-06-23 S.O.I. Tec Silicon On Insulator Technologies Process for recycling a substrate.
US8679280B2 (en) * 2010-05-27 2014-03-25 International Business Machines Corporation Laser ablation of adhesive for integrated circuit fabrication

Also Published As

Publication number Publication date
DE112012003512T5 (en) 2014-12-31
WO2013011372A1 (en) 2013-01-24
CN103814435A (en) 2014-05-21
KR20140065449A (en) 2014-05-29
FR2980280A1 (en) 2013-03-22
US10220603B2 (en) 2019-03-05
WO2013011372A8 (en) 2014-04-24
FR2980280B1 (en) 2013-10-11
TWI594297B (en) 2017-08-01
CN103814435B (en) 2016-08-31
US20140326416A1 (en) 2014-11-06
TW201316379A (en) 2013-04-16

Similar Documents

Publication Publication Date Title
PL3292850T3 (en) Method for producing composite structure
SG11201403605PA (en) Method for separating gases
EG27059A (en) Method for separating independent simultaneous sources
PL3517297T3 (en) Method for producing a laminated product
ZA201401133B (en) Method for producing ternesite
EP2750884A4 (en) Methods for producing an at least partially cured layer
EP2794701A4 (en) A peptide-hydrogel composite
EP2717369A4 (en) Method for manufacturing fuel-cell separator
HK1203646A1 (en) Method for producing a component
ZA201207920B (en) Separation method
EP2562789A4 (en) Method for producing composite substrate
EP2770665A4 (en) Method for creating a group
HK1199272A1 (en) Separation method for fucosylated antibodies
HK1200772A1 (en) Methods for forming composite container structures
SG2014001168A (en) Method for removing hard carbon layers
ZA201307419B (en) Method for producing hydrocarbons
EP2799211A4 (en) Method for joining composite materials
EP2757574A4 (en) Method for manufacturing composite wafer
SG11201400695YA (en) Method for fabricating a composite structure to be separated by exfoliation
GB201215124D0 (en) A method of making a composite structure
ZA201306482B (en) Improved composite system for packaging
SG11201400366YA (en) Method for separating a layer from a composite structure
ZA201209070B (en) Separation method
GB201005991D0 (en) Separation method
LU91841B1 (en) Method for forming gas sensing layers