SG108990A1 - Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording medium - Google Patents
Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording mediumInfo
- Publication number
- SG108990A1 SG108990A1 SG200404345A SG200404345A SG108990A1 SG 108990 A1 SG108990 A1 SG 108990A1 SG 200404345 A SG200404345 A SG 200404345A SG 200404345 A SG200404345 A SG 200404345A SG 108990 A1 SG108990 A1 SG 108990A1
- Authority
- SG
- Singapore
- Prior art keywords
- recording medium
- magnetic recording
- substrate
- manufacturing
- same
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003197118 | 2003-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG108990A1 true SG108990A1 (en) | 2005-02-28 |
Family
ID=34055840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200404345A SG108990A1 (en) | 2003-07-15 | 2004-07-12 | Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording medium |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20050011860A1 (zh) |
| KR (1) | KR20050008516A (zh) |
| CN (1) | CN1577510A (zh) |
| SG (1) | SG108990A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009005303A1 (de) * | 2009-01-16 | 2010-07-22 | BIAS - Bremer Institut für angewandte Strahltechnik GmbH | Verfahren zum Separieren eines Halbleiter-Wafer von einem Halbleiterkristall |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL109817C (zh) * | 1955-12-02 | |||
| US3559281A (en) * | 1968-11-27 | 1971-02-02 | Motorola Inc | Method of reclaiming processed semiconductior wafers |
| JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
-
2004
- 2004-07-08 US US10/886,769 patent/US20050011860A1/en not_active Abandoned
- 2004-07-12 SG SG200404345A patent/SG108990A1/en unknown
- 2004-07-14 KR KR1020040054795A patent/KR20050008516A/ko not_active Application Discontinuation
- 2004-07-15 CN CNA2004100716380A patent/CN1577510A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20050011860A1 (en) | 2005-01-20 |
| CN1577510A (zh) | 2005-02-09 |
| KR20050008516A (ko) | 2005-01-21 |
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