SG107588A1 - Method for forming a nickel silicide layer on a silicon substrate - Google Patents
Method for forming a nickel silicide layer on a silicon substrateInfo
- Publication number
- SG107588A1 SG107588A1 SG200202489A SG200202489A SG107588A1 SG 107588 A1 SG107588 A1 SG 107588A1 SG 200202489 A SG200202489 A SG 200202489A SG 200202489 A SG200202489 A SG 200202489A SG 107588 A1 SG107588 A1 SG 107588A1
- Authority
- SG
- Singapore
- Prior art keywords
- forming
- silicon substrate
- silicide layer
- nickel silicide
- nickel
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910021334 nickel silicide Inorganic materials 0.000 title 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG200202489A SG107588A1 (en) | 2002-04-25 | 2002-04-25 | Method for forming a nickel silicide layer on a silicon substrate |
| PCT/SG2003/000096 WO2003096407A1 (en) | 2002-04-25 | 2003-04-25 | Method for forming a nickel silicide layer on a silicon substrate |
| AU2003266984A AU2003266984A1 (en) | 2002-04-25 | 2003-04-25 | Method for forming a nickel silicide layer on a silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG200202489A SG107588A1 (en) | 2002-04-25 | 2002-04-25 | Method for forming a nickel silicide layer on a silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG107588A1 true SG107588A1 (en) | 2004-12-29 |
Family
ID=29417944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200202489A SG107588A1 (en) | 2002-04-25 | 2002-04-25 | Method for forming a nickel silicide layer on a silicon substrate |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2003266984A1 (en) |
| SG (1) | SG107588A1 (en) |
| WO (1) | WO2003096407A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335606B2 (en) | 2004-03-15 | 2008-02-26 | Agency For Science, Technology And Research | Silicide formed from ternary metal alloy films |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668040A (en) * | 1995-03-20 | 1997-09-16 | Lg Semicon Co., Ltd. | Method for forming a semiconductor device electrode which also serves as a diffusion barrier |
| US20020045344A1 (en) * | 1996-06-04 | 2002-04-18 | Quingfeng Wang | Method of forming polycrystalline cosi2 salicide and products obtained thereof |
| US20020151170A1 (en) * | 1996-06-04 | 2002-10-17 | Karen Maex | Method of forming polycrystalline CoSi2 salicide and products obtained thereof |
| US6303504B1 (en) * | 1998-02-26 | 2001-10-16 | Vlsi Technology, Inc. | Method of improving process robustness of nickel salicide in semiconductors |
| US6440851B1 (en) * | 1999-10-12 | 2002-08-27 | International Business Machines Corporation | Method and structure for controlling the interface roughness of cobalt disilicide |
| US6605513B2 (en) * | 2000-12-06 | 2003-08-12 | Advanced Micro Devices, Inc. | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
| US6339021B1 (en) * | 2001-05-09 | 2002-01-15 | Chartered Semiconductor Manufacturing Ltd. | Methods for effective nickel silicide formation |
| US6495460B1 (en) * | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
-
2002
- 2002-04-25 SG SG200202489A patent/SG107588A1/en unknown
-
2003
- 2003-04-25 AU AU2003266984A patent/AU2003266984A1/en not_active Abandoned
- 2003-04-25 WO PCT/SG2003/000096 patent/WO2003096407A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003096407A8 (en) | 2004-04-01 |
| WO2003096407A1 (en) | 2003-11-20 |
| AU2003266984A1 (en) | 2003-11-11 |
| AU2003266984A8 (en) | 2003-11-11 |
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