SG10202011246WA - Electronic device and method for maufacturing electronic device - Google Patents

Electronic device and method for maufacturing electronic device

Info

Publication number
SG10202011246WA
SG10202011246WA SG10202011246WA SG10202011246WA SG 10202011246W A SG10202011246W A SG 10202011246WA SG 10202011246W A SG10202011246W A SG 10202011246WA SG 10202011246W A SG10202011246W A SG 10202011246WA
Authority
SG
Singapore
Prior art keywords
electronic device
maufacturing
electronic
maufacturing electronic
Prior art date
Application number
Inventor
Sub Kim Myoung
Hoon Kim Tae
Seok Lee Beom
Yun Lee Seung
Jun Zang Hwan
Jick Cho Byung
Sun Han Ji
Original Assignee
Sk Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Hynix Inc filed Critical Sk Hynix Inc
Publication of SG10202011246WA publication Critical patent/SG10202011246WA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
SG10202011246W 2020-03-04 2020-11-12 Electronic device and method for maufacturing electronic device SG10202011246WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200027405A KR20210112178A (en) 2020-03-04 2020-03-04 Electronic device and method for manufacturing electronic device

Publications (1)

Publication Number Publication Date
SG10202011246WA true SG10202011246WA (en) 2021-10-28

Family

ID=77524398

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202011246W SG10202011246WA (en) 2020-03-04 2020-11-12 Electronic device and method for maufacturing electronic device

Country Status (4)

Country Link
US (2) US11430952B2 (en)
KR (1) KR20210112178A (en)
CN (1) CN113363379B (en)
SG (1) SG10202011246WA (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11450384B2 (en) * 2020-04-06 2022-09-20 Crossbar, Inc. Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip
US20240015987A1 (en) * 2022-07-08 2024-01-11 Macronix International Co., Ltd. Multi-layer ovonic threshold switch (ots) for switching devices and memory devices using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821680A (en) 1996-10-17 1998-10-13 Sandia Corporation Multi-layer carbon-based coatings for field emission
US7473950B2 (en) 2006-06-07 2009-01-06 Ovonyx, Inc. Nitrogenated carbon electrode for chalcogenide device and method of making same
US20100221896A1 (en) 2008-05-28 2010-09-02 Regino Sandoval Electrical Device with Improved Electrode Surface
US9281471B2 (en) * 2014-04-30 2016-03-08 Micron Technology, Inc. Phase change memory stack with treated sidewalls
KR20160006485A (en) * 2014-07-09 2016-01-19 에스케이하이닉스 주식회사 Electronic device including a semiconductor memory and method for fabricating the same
KR20160075176A (en) * 2014-12-19 2016-06-29 에스케이하이닉스 주식회사 Electronic device
KR20170055716A (en) * 2015-11-12 2017-05-22 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
KR102465967B1 (en) * 2016-02-22 2022-11-10 삼성전자주식회사 Memory device and method for fabricating the same
KR20180134048A (en) * 2017-06-08 2018-12-18 에스케이하이닉스 주식회사 Electronic device and method for fabricating the same
US10825987B2 (en) * 2018-06-06 2020-11-03 Micron Technology, Inc. Fabrication of electrodes for memory cells

Also Published As

Publication number Publication date
US11430952B2 (en) 2022-08-30
CN113363379A (en) 2021-09-07
US11950522B2 (en) 2024-04-02
US20220320427A1 (en) 2022-10-06
CN113363379B (en) 2024-04-23
KR20210112178A (en) 2021-09-14
US20210280781A1 (en) 2021-09-09

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