SG10201913412VA - Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures - Google Patents

Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures

Info

Publication number
SG10201913412VA
SG10201913412VA SG10201913412VA SG10201913412VA SG10201913412VA SG 10201913412V A SG10201913412V A SG 10201913412VA SG 10201913412V A SG10201913412V A SG 10201913412VA SG 10201913412V A SG10201913412V A SG 10201913412VA SG 10201913412V A SG10201913412V A SG 10201913412VA
Authority
SG
Singapore
Prior art keywords
cleave
systems
methods
mountable
bonded wafer
Prior art date
Application number
SG10201913412VA
Inventor
Justin Scott Kayser
John Francis Valley
James Dean Eoff
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG10201913412VA publication Critical patent/SG10201913412VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
SG10201913412VA 2017-01-23 2018-01-16 Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures SG10201913412VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201762449251P 2017-01-23 2017-01-23

Publications (1)

Publication Number Publication Date
SG10201913412VA true SG10201913412VA (en) 2020-03-30

Family

ID=61800657

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201906621QA SG11201906621QA (en) 2017-01-23 2018-01-16 Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures
SG10201913412VA SG10201913412VA (en) 2017-01-23 2018-01-16 Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201906621QA SG11201906621QA (en) 2017-01-23 2018-01-16 Cleave systems, mountable cleave monitoring systems, and methods for separating bonded wafer structures

Country Status (8)

Country Link
US (2) US10679908B2 (en)
EP (2) EP3571713B1 (en)
JP (1) JP6967596B2 (en)
KR (1) KR102336369B1 (en)
CN (1) CN110383447B (en)
SG (2) SG11201906621QA (en)
TW (1) TWI734889B (en)
WO (1) WO2018136399A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10991617B2 (en) * 2018-05-15 2021-04-27 Applied Materials, Inc. Methods and apparatus for cleaving of semiconductor substrates
CN112582332A (en) * 2020-12-08 2021-03-30 上海新昇半导体科技有限公司 Silicon-on-insulator structure and method thereof
US20220208619A1 (en) 2020-12-30 2022-06-30 Globalwafers Co., Ltd Methods for implanting semiconductor substrates

Family Cites Families (24)

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US3880028A (en) * 1974-02-25 1975-04-29 Ppg Industries Inc Method and apparatus for monitoring and controlling glass cutting
JPS61159354A (en) * 1984-09-03 1986-07-19 Toyota Motor Corp Method of discriminating actual machining and no-load machining and device thereof
JPS61195955U (en) * 1985-05-29 1986-12-06
US4736625A (en) * 1986-11-05 1988-04-12 The Warner & Swasey Company Method and apparatus for monitoring the cutting condition of a machine tool during machining of a workpiece
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5170929A (en) * 1992-05-29 1992-12-15 International Business Machines Corporation Ultrasonic adhesion/dehesion monitoring apparatus with acoustic transducer means
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
JP4379943B2 (en) 1999-04-07 2009-12-09 株式会社デンソー Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6709314B2 (en) * 2001-11-07 2004-03-23 Applied Materials Inc. Chemical mechanical polishing endpoinat detection
US20070045738A1 (en) * 2005-08-26 2007-03-01 Memc Electronic Materials, Inc. Method for the manufacture of a strained silicon-on-insulator structure
US9362439B2 (en) * 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US20080188011A1 (en) * 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
JP2009283582A (en) 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd Bonded wafer manufacturing method and bonded wafer
US7902091B2 (en) * 2008-08-13 2011-03-08 Varian Semiconductor Equipment Associates, Inc. Cleaving of substrates
US20110016975A1 (en) 2009-07-24 2011-01-27 Gregory Scott Glaesemann Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation
US8440541B2 (en) * 2010-02-25 2013-05-14 Memc Electronic Materials, Inc. Methods for reducing the width of the unbonded region in SOI structures
TWI562264B (en) * 2012-12-19 2016-12-11 Genesis Photonics Inc Splitting apparatus and splitting method
US9576862B2 (en) * 2013-03-15 2017-02-21 Rudolph Technologies, Inc. Optical acoustic substrate assessment system and method
FR3020175B1 (en) * 2014-04-16 2016-05-13 Soitec Silicon On Insulator METHOD OF TRANSFERRING A USEFUL LAYER
JP6345611B2 (en) * 2015-02-04 2018-06-20 東京エレクトロン株式会社 Peeling apparatus, peeling system, peeling method, program, and information storage medium
JP6695102B2 (en) * 2015-05-26 2020-05-20 株式会社ディスコ Processing system
WO2017083120A1 (en) * 2015-11-12 2017-05-18 The Regents Of The University Of California Acoustic and vibration sensing apparatus and method for monitoring cutting tool operation
JP6866217B2 (en) * 2017-04-21 2021-04-28 株式会社ディスコ Cutting equipment

Also Published As

Publication number Publication date
EP3933901A1 (en) 2022-01-05
TWI734889B (en) 2021-08-01
SG11201906621QA (en) 2019-08-27
JP6967596B2 (en) 2021-11-17
TW201841286A (en) 2018-11-16
CN110383447B (en) 2023-09-15
US20190206745A1 (en) 2019-07-04
WO2018136399A1 (en) 2018-07-26
EP3933901B1 (en) 2023-04-19
US20180211889A1 (en) 2018-07-26
KR20190119595A (en) 2019-10-22
US10910280B2 (en) 2021-02-02
CN110383447A (en) 2019-10-25
EP3571713B1 (en) 2021-09-29
JP2020507206A (en) 2020-03-05
EP3571713A1 (en) 2019-11-27
KR102336369B1 (en) 2021-12-07
US10679908B2 (en) 2020-06-09

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