SG10201912919RA - Pixel structure - Google Patents

Pixel structure

Info

Publication number
SG10201912919RA
SG10201912919RA SG10201912919RA SG10201912919RA SG10201912919RA SG 10201912919R A SG10201912919R A SG 10201912919RA SG 10201912919R A SG10201912919R A SG 10201912919RA SG 10201912919R A SG10201912919R A SG 10201912919RA SG 10201912919R A SG10201912919R A SG 10201912919RA
Authority
SG
Singapore
Prior art keywords
pixel structure
pixel
Prior art date
Application number
SG10201912919RA
Inventor
TU Chen-Yuan
WU Chen-Chung
LIN Tai-Tso
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Publication of SG10201912919RA publication Critical patent/SG10201912919RA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009Materials therefor
    • G02F1/0063Optical properties, e.g. absorption, reflection or birefringence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/126Shielding, e.g. light-blocking means over the TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
SG10201912919RA 2019-04-18 2019-12-23 Pixel structure SG10201912919RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108113586A TWI691762B (en) 2019-04-18 2019-04-18 Pixel structure

Publications (1)

Publication Number Publication Date
SG10201912919RA true SG10201912919RA (en) 2020-11-27

Family

ID=69555175

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201912919RA SG10201912919RA (en) 2019-04-18 2019-12-23 Pixel structure

Country Status (4)

Country Link
US (1) US10971565B2 (en)
CN (1) CN110828481B (en)
SG (1) SG10201912919RA (en)
TW (1) TWI691762B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466931A (en) 2020-11-27 2021-03-09 Tcl华星光电技术有限公司 Electrode structure, preparation method thereof and thin film transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792574B2 (en) * 1988-12-21 1995-10-09 インターナショナル・ビジネス・マシーンズ・コーポレーション Liquid crystal display device and manufacturing method thereof
KR0171102B1 (en) 1995-08-29 1999-03-20 구자홍 Liquid crystal display device structure and manufacturing method
JP3556364B2 (en) 1995-12-27 2004-08-18 富士通ディスプレイテクノロジーズ株式会社 Active matrix type liquid crystal display panel and projection type display device
CN100421019C (en) * 2006-12-06 2008-09-24 友达光电股份有限公司 Method for producing liquid crystal display device substrate
CN100447628C (en) 2007-01-16 2008-12-31 友达光电股份有限公司 Manufacturing method for chromatic filter layer
TWI426563B (en) 2008-05-07 2014-02-11 Au Optronics Corp Pixel structure and the transistor thereof and the method manufacturing the same
US20130265459A1 (en) * 2011-06-28 2013-10-10 Pelican Imaging Corporation Optical arrangements for use with an array camera
CN103199095B (en) 2013-04-01 2016-06-08 京东方科技集团股份有限公司 Display, thin-film transistor array base-plate and manufacturing process thereof
TWI613486B (en) * 2014-08-01 2018-02-01 Toppan Printing Co Ltd Black electrode substrate, method of manufacturing black electrode substrate, and display device
JP6538504B2 (en) * 2014-09-30 2019-07-03 株式会社半導体エネルギー研究所 Organometallic complex, light emitting element, light emitting device, electronic device, and lighting device
TWI578544B (en) * 2014-12-02 2017-04-11 鴻海精密工業股份有限公司 Thin film transistor and display array substrate utilizing the thin film transistor
TWI651574B (en) 2015-01-12 2019-02-21 友達光電股份有限公司 Display panel and method of manufacturing same
CN104714347B (en) * 2015-04-03 2018-09-18 京东方科技集团股份有限公司 A kind of array substrate and preparation method thereof, display device
KR102441558B1 (en) 2015-04-07 2022-09-08 삼성디스플레이 주식회사 Organic light-emitting display apparatus and method for manufacturing the same
KR102494418B1 (en) 2015-04-13 2023-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display panel, data processor, and method for manufacturing display panel
CN105097831B (en) * 2015-06-23 2019-03-29 京东方科技集团股份有限公司 Low temperature polycrystalline silicon backboard and its manufacturing method and luminescent device
KR20170101128A (en) * 2016-02-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
CN105842904B (en) * 2016-05-25 2024-02-06 京东方科技集团股份有限公司 Array substrate, display device and preparation method
JP6822114B2 (en) * 2016-12-13 2021-01-27 天馬微電子有限公司 How to drive display devices, transistor circuits and thin film transistors

Also Published As

Publication number Publication date
TW202040226A (en) 2020-11-01
CN110828481B (en) 2022-03-25
US10971565B2 (en) 2021-04-06
TWI691762B (en) 2020-04-21
US20200335565A1 (en) 2020-10-22
CN110828481A (en) 2020-02-21

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