SG10201910772PA - Hydrogenated isotopically enriched boron trifluoride dopant source gas composition - Google Patents
Hydrogenated isotopically enriched boron trifluoride dopant source gas compositionInfo
- Publication number
- SG10201910772PA SG10201910772PA SG10201910772PA SG10201910772PA SG10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA
- Authority
- SG
- Singapore
- Prior art keywords
- source gas
- boron trifluoride
- gas composition
- dopant source
- isotopically enriched
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/06—Boron halogen compounds
- C01B35/061—Halides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662314241P | 2016-03-28 | 2016-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201910772PA true SG10201910772PA (en) | 2020-01-30 |
Family
ID=58668943
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201910772PA SG10201910772PA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
| SG11201810163VA SG11201810163VA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810163VA SG11201810163VA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10920087B2 (ko) |
| EP (1) | EP3436404B1 (ko) |
| KR (1) | KR102194518B1 (ko) |
| CN (1) | CN109195910B (ko) |
| SG (2) | SG10201910772PA (ko) |
| TW (1) | TWI636013B (ko) |
| WO (1) | WO2017172618A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201909490SA (en) * | 2015-05-12 | 2019-11-28 | Entegris Inc | Valve assemblies and fluid storage and dispensing packages comprising same |
| CN113261073A (zh) * | 2018-12-15 | 2021-08-13 | 恩特格里斯公司 | 利用非钨材料的氟离子植入系统和其使用方法 |
| KR102220239B1 (ko) | 2019-05-13 | 2021-02-25 | 주식회사 에프알디 | 삼불화붕소 수득 장치 |
| KR102330961B1 (ko) | 2019-11-29 | 2021-11-25 | 주식회사 에프알디 | 고순도 삼불화붕소 제조 장치 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6101816A (en) | 1998-04-28 | 2000-08-15 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
| US6343476B1 (en) | 1998-04-28 | 2002-02-05 | Advanced Technology Materials, Inc. | Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein |
| EP1441865A4 (en) | 2001-09-18 | 2010-04-07 | Eidgenoess Tech Hochschule | METHODS AND APPARATUS FOR ENRICHING SURFACES TO REDUCE PROTEIN ADSORPTION AND CELL ADHESION, AND FOR PRESENTING LIGANDS |
| US7033879B2 (en) | 2004-04-29 | 2006-04-25 | Texas Instruments Incorporated | Semiconductor device having optimized shallow junction geometries and method for fabrication thereof |
| JP5591470B2 (ja) | 2005-08-30 | 2014-09-17 | アドバンスト テクノロジー マテリアルズ，インコーポレイテッド | 代替フッ化ホウ素前駆体を使用するホウ素イオン注入および注入のための大きな水素化ホウ素の形成 |
| GB0901857D0 (en) | 2009-02-05 | 2009-03-11 | Nanoco Technologies Ltd | Encapsulated nanoparticles |
| US8138071B2 (en) | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8598022B2 (en) * | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| TWI689467B (zh) * | 2010-02-26 | 2020-04-01 | 美商恩特葛瑞斯股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
| US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
| TWI592461B (zh) | 2011-09-23 | 2017-07-21 | 納諾柯技術有限公司 | 基於半導體奈米粒子之發光材料 |
| US20130243874A1 (en) | 2012-03-06 | 2013-09-19 | Imra Of America, Inc. | Nanoparticles coated with amphiphilic block copolymers |
| WO2014186575A1 (en) * | 2013-05-17 | 2014-11-20 | Advanced Technology Materials, Inc. | Preparation of high pressure bf3/h2 mixtures |
| US9524849B2 (en) * | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
| US9570271B2 (en) * | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
-
2017
- 2017-03-27 SG SG10201910772PA patent/SG10201910772PA/en unknown
- 2017-03-27 KR KR1020187031266A patent/KR102194518B1/ko active IP Right Grant
- 2017-03-27 CN CN201780033136.4A patent/CN109195910B/zh active Active
- 2017-03-27 EP EP17721225.5A patent/EP3436404B1/en active Active
- 2017-03-27 SG SG11201810163VA patent/SG11201810163VA/en unknown
- 2017-03-27 WO PCT/US2017/024312 patent/WO2017172618A1/en active Application Filing
- 2017-03-27 US US16/098,728 patent/US10920087B2/en active Active
- 2017-03-28 TW TW106110395A patent/TWI636013B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109195910B (zh) | 2022-05-24 |
| WO2017172618A1 (en) | 2017-10-05 |
| EP3436404A1 (en) | 2019-02-06 |
| EP3436404B1 (en) | 2020-08-26 |
| TWI636013B (zh) | 2018-09-21 |
| CN109195910A (zh) | 2019-01-11 |
| TW201805240A (zh) | 2018-02-16 |
| US20190136069A1 (en) | 2019-05-09 |
| SG11201810163VA (en) | 2018-12-28 |
| KR20180134932A (ko) | 2018-12-19 |
| US10920087B2 (en) | 2021-02-16 |
| KR102194518B1 (ko) | 2020-12-23 |
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