SG10201908976QA - Barrier slurry removal rate improvement - Google Patents

Barrier slurry removal rate improvement

Info

Publication number
SG10201908976QA
SG10201908976QA SG10201908976QA SG10201908976QA SG10201908976QA SG 10201908976Q A SG10201908976Q A SG 10201908976QA SG 10201908976Q A SG10201908976Q A SG 10201908976QA SG 10201908976Q A SG10201908976Q A SG 10201908976QA SG 10201908976Q A SG10201908976Q A SG 10201908976QA
Authority
SG
Singapore
Prior art keywords
removal rate
rate improvement
slurry removal
barrier slurry
barrier
Prior art date
Application number
SG10201908976QA
Inventor
Gan Lu
Allen Schlueter James
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201908976QA publication Critical patent/SG10201908976QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Treatment Of Sludge (AREA)
SG10201908976QA 2018-09-28 2019-09-26 Barrier slurry removal rate improvement SG10201908976QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862738427P 2018-09-28 2018-09-28
US16/577,580 US20200102476A1 (en) 2018-09-28 2019-09-20 Barrier Slurry Removal Rate Improvement

Publications (1)

Publication Number Publication Date
SG10201908976QA true SG10201908976QA (en) 2020-04-29

Family

ID=68084726

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908976QA SG10201908976QA (en) 2018-09-28 2019-09-26 Barrier slurry removal rate improvement

Country Status (7)

Country Link
US (1) US20200102476A1 (en)
EP (1) EP3628714B1 (en)
JP (1) JP7048550B2 (en)
KR (1) KR102406821B1 (en)
CN (1) CN111087929A (en)
SG (1) SG10201908976QA (en)
TW (1) TWI796520B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113122143B (en) * 2019-12-31 2024-03-08 安集微电子(上海)有限公司 Chemical mechanical polishing solution and application thereof in copper polishing
WO2021162978A1 (en) * 2020-02-13 2021-08-19 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
US20210301405A1 (en) * 2020-03-25 2021-09-30 Versum Materials Us, Llc Barrier Chemical Mechanical Planarization Slurries For Cobalt Films
EP4214286A1 (en) 2020-09-18 2023-07-26 CMC Materials, Inc. Silica-based slurry for selective polishing of carbon-based films
CN114686113A (en) * 2020-12-30 2022-07-01 安集微电子科技(上海)股份有限公司 Chemical mechanical polishing solution and using method thereof
CN115197645B (en) * 2021-04-02 2024-02-20 Sk恩普士有限公司 Polishing composition for semiconductor process and method for manufacturing semiconductor device
WO2023004269A1 (en) * 2021-07-23 2023-01-26 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper barrier slurries
CN115386302B (en) * 2022-08-23 2023-06-02 常州时创能源股份有限公司 Additive for silicon wafer back polishing and application thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6537000A (en) * 1999-08-13 2001-03-13 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US7491252B2 (en) 2002-03-25 2009-02-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
ATE403936T1 (en) * 2002-04-30 2008-08-15 Hitachi Chemical Co Ltd POLISHING FLUID AND POLISHING PROCESS
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
WO2006133249A2 (en) * 2005-06-06 2006-12-14 Advanced Technology Materials, Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101153205A (en) * 2006-09-29 2008-04-02 安集微电子(上海)有限公司 Chemical mechanical polishing solution for polishing low dielectric materials
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
JP2009094430A (en) * 2007-10-12 2009-04-30 Adeka Corp Polishing composition for cmp
JP5371416B2 (en) * 2008-12-25 2013-12-18 富士フイルム株式会社 Polishing liquid and polishing method
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
JP6797811B2 (en) * 2015-09-30 2020-12-09 株式会社フジミインコーポレーテッド Polishing method
US20190256741A1 (en) * 2016-06-09 2019-08-22 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization

Also Published As

Publication number Publication date
CN111087929A (en) 2020-05-01
JP2020059847A (en) 2020-04-16
EP3628714A1 (en) 2020-04-01
TW202014487A (en) 2020-04-16
KR102406821B1 (en) 2022-06-10
KR20200036790A (en) 2020-04-07
TWI796520B (en) 2023-03-21
EP3628714B1 (en) 2022-06-15
US20200102476A1 (en) 2020-04-02
JP7048550B2 (en) 2022-04-05

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