SG10201907903YA - Method of forming and packaging semiconductor die - Google Patents

Method of forming and packaging semiconductor die

Info

Publication number
SG10201907903YA
SG10201907903YA SG10201907903YA SG10201907903YA SG10201907903YA SG 10201907903Y A SG10201907903Y A SG 10201907903YA SG 10201907903Y A SG10201907903Y A SG 10201907903YA SG 10201907903Y A SG10201907903Y A SG 10201907903YA SG 10201907903Y A SG10201907903Y A SG 10201907903YA
Authority
SG
Singapore
Prior art keywords
forming
semiconductor die
packaging semiconductor
packaging
die
Prior art date
Application number
SG10201907903YA
Inventor
Sik Choi Jae
Won JEONG Jin
Soo Song Byeung
Ki SHIM Dong
Han Bae Jin
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of SG10201907903YA publication Critical patent/SG10201907903YA/en

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    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/10155—Shape being other than a cuboid
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
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US11735487B2 (en) * 2019-10-30 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating the same
US11764164B2 (en) * 2020-06-15 2023-09-19 Micron Technology, Inc. Semiconductor device and method of forming the same
KR20220005188A (en) * 2020-07-06 2022-01-13 매그나칩 반도체 유한회사 Method for forming semiconductor die and semiconductor device thereof
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US11715704B2 (en) 2021-04-14 2023-08-01 Micron Technology, Inc. Scribe structure for memory device
US11769736B2 (en) 2021-04-14 2023-09-26 Micron Technology, Inc. Scribe structure for memory device
US20220336335A1 (en) * 2021-04-16 2022-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package having multiple substrates
US11600578B2 (en) 2021-04-22 2023-03-07 Micron Technology, Inc. Scribe structure for memory device
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